公开(公告)号：US11238189B2

公开(公告)日：2022-02-01

申请号：US15996899

申请日：2018-06-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Stefan Hunsche ,  Venugopal Vellanki

IPC: G06F30/20 ,  H01L21/66 ,  G03F7/20

Abstract: A defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.

公开(公告)号：US11003093B2

公开(公告)日：2021-05-11

申请号：US16696263

申请日：2019-11-26

Applicant: ASML Netherlands B.V.

Inventor： Venugopal Vellanki ,  Vivek Kumar Jain ,  Stefan Hunsche

IPC: G06F30/398 ,  G06N20/00 ,  G03F7/00 ,  G03F1/60 ,  G03F1/84 ,  G06F30/20 ,  G03F7/20 ,  G06F119/18

Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including; determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.

公开(公告)号：US11460784B2

公开(公告)日：2022-10-04

申请号：US17272505

申请日：2019-09-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Venugopal Vellanki ,  Mark Christopher Simmons

IPC: G03F7/20

Abstract: A method of determining candidate patterns from a set of patterns of a patterning process. The method includes obtaining (i) a set of patterns of a patterning process, (ii) a search pattern having a first feature and a second feature, and (iii) a search condition comprising a relative position between the first feature and the second feature of the search pattern; and determining a set of candidate patterns from the set of patterns that satisfies the search condition associated with the first feature and the second feature of the search pattern.

公开(公告)号：US11176307B2

公开(公告)日：2021-11-16

申请号：US16349317

申请日：2017-11-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Venugopal Vellanki ,  Been-Der Chen

IPC: G06F30/398 ,  G06F30/392 ,  G03F1/36 ,  G03F7/20

Abstract: A method including: obtaining a device design pattern layout having a plurality of design pattern polygons; automatically identifying, by a computer, a unit cell of polygons in the device design pattern layout; identifying a plurality of occurrences of the unit cell within the device design pattern layout to build a hierarchy; and performing, by the computer, an optical proximity correction on the device design pattern layout by repeatedly applying an optical proximity correction designed for the unit cell to the occurrences of the unit cell in the hierarchy.

公开(公告)号：US10514614B2

公开(公告)日：2019-12-24

申请号：US15546592

申请日：2016-01-20

Applicant: ASML Netherlands B.V.

Inventor： Venugopal Vellanki ,  Vivek Kumar Jain ,  Stefan Hunsche

IPC: G06F17/50 ,  G03F7/00 ,  G03F1/60 ,  G03F1/84 ,  G06N20/00 ,  G03F7/20

Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.

公开(公告)号：US20250053702A1

公开(公告)日：2025-02-13

申请号：US18928905

申请日：2024-10-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Stefan Hunsche ,  Venugopal Vellanki

IPC: G06F30/20 ,  G03F7/00 ,  H01L21/66

Abstract: A defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.

公开(公告)号：US12141507B2

公开(公告)日：2024-11-12

申请号：US17586856

申请日：2022-01-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Stefan Hunsche ,  Venugopal Vellanki

IPC: G06F30/20 ,  G03F7/00 ,  H01L21/66

Abstract: A defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.

公开(公告)号：US20220147665A1

公开(公告)日：2022-05-12

申请号：US17586856

申请日：2022-01-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Stefan Hunsche ,  Venugopal Vellanki

IPC: G06F30/20 ,  H01L21/66 ,  G03F7/20

Abstract: A defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.

公开(公告)号：US12092965B2

公开(公告)日：2024-09-17

申请号：US17313135

申请日：2021-05-06

Applicant: ASML Netherlands B.V.

Inventor： Venugopal Vellanki ,  Vivek Kumar Jain ,  Stefan Hunsche

IPC: G06F30/20 ,  G03F1/60 ,  G03F1/84 ,  G03F7/00 ,  G06F30/398 ,  G06N20/00 ,  G06F119/18

CPC classification number: G03F7/7065 ,  G03F1/60 ,  G03F1/84 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70641 ,  G03F7/70666 ,  G06F30/398 ,  G06N20/00 ,  G06F30/20 ,  G06F2119/18

Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.