公开(公告)号：US09748072B2

公开(公告)日：2017-08-29

申请号：US14312617

申请日：2014-06-23

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin Wan ,  Rekha Padmanabhan ,  Xiao Bai ,  Gary N. Cai ,  Ching-I Li ,  Ger-Pin Lin ,  Shao-Yu Hu ,  David Hoglund ,  Robert E. Kaim ,  Kourosh Saadatmand

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/0835 ,  H01J2237/303 ,  H01J2237/30477

Abstract: In an exemplary process for lower dose rate ion implantation of a work piece, an ion beam may be generated using an ion source and an extraction manipulator. The extraction manipulator may be positioned at a gap distance from an exit aperture of the ion source. A current of the ion beam exiting the extraction manipulator may be maximized when the extraction manipulator is positioned at an optimal gap distance from the exit aperture. The gap distance at which the extraction manipulator is positioned from the exit aperture may differ from the optimal gap distance by at least 10 percent. A first potential may be applied to a first set of electrodes. An x-dimension of the ion beam may increase as the ion beam passes through the first set of electrodes. The work piece may be positioned in the ion beam to implant ions into the work piece.

公开(公告)号：US09431247B2

公开(公告)日：2016-08-30

申请号：US14752522

申请日：2015-06-26

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Zhimin Wan ,  Kourosh Saadatmand ,  Wilhelm P. Platow ,  Ger-Pin Lin ,  Ching-I Li ,  Rekha Padmanabhan ,  Gary N. Cai

IPC: H01L21/265 ,  H01J37/302

CPC classification number: H01L21/26586 ,  H01J37/3026 ,  H01J37/3171 ,  H01J2237/0835 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31706

Abstract: A method for an ion implantation is provided. First, a non-parallel ion beam is provided. Thereafter, a relative motion between a workpiece and the non-parallel ion beam, so as to enable each region of the workpiece to be implanted by different portions of the non-parallel ion beam successively. Particularly, when at least one three-dimensional structure is located on the upper surface of the workpiece, both the top surface and the side surface of the three-dimensional structure may be implanted properly by the non-parallel ion beam when the workpiece is moved across the non-parallel ion beam one and only one times. Herein, the non-parallel ion beam can be a divergent ion beam or a convergent ion beam (both may be viewed as the integrated divergent beam), also can be generated directly from an ion source or is modified from a parallel ion beam, a divergent ion beam or a convergent ion beam.

Abstract translation: 提供了一种用于离子注入的方法。 首先，提供非平行离子束。 此后，工件和非平行离子束之间的相对运动，以使得工件的每个区域能够被不平行离子束的不同部分连续地注入。 特别地，当至少一个三维结构位于工件的上表面上时，当工件移动时，可以通过非平行离子束适当地注入三维结构的顶表面和侧表面 跨越非平行离子束一次，仅一次。 这里，非平行离子束可以是发散离子束或会聚离子束（两者均可视为积分发散光束），也可以直接从离子源产生或者从平行离子束修饰， 发散离子束或会聚离子束。

公开(公告)号：US09450078B1

公开(公告)日：2016-09-20

申请号：US14678874

申请日：2015-04-03

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Daniel Tang ,  Zhimin Wan ,  Ching-I Li ,  Ger-Pin Lin

IPC: H01L21/38 ,  H01L29/66 ,  H01L29/10 ,  H01L21/306 ,  H01L21/265 ,  H01L21/324 ,  H01L21/762

CPC classification number: H01L29/66795 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/30604 ,  H01L21/324 ,  H01L21/76237 ,  H01L29/1083

Abstract: In forming a punch-through stopper region in a fin field effect transistor (finFET) device, a substrate may be etched to form a pair of trenches that define a fin structure. A portion of a first dose of ions may be implanted into the substrate through a bottom wall of each trench to form a pair of first dopant regions that at least partially extend under a channel region of the fin structure. The substrate at the bottom wall of each trench may be etched to increase a depth of each trench. Etching the substrate at the bottom wall of each trench may remove a portion of each first dopant region under each trench. A remaining portion of the pair of first dopant regions under the fin structure may at least partially define the punch-through stopper region of the finFET device.

Abstract translation: 在鳍状场效应晶体管（finFET）器件中形成穿通停止区域时，可蚀刻衬底以形成限定翅片结构的一对沟槽。 第一剂量的离子的一部分可以通过每个沟槽的底壁注入到衬底中，以形成至少部分地延伸在翅片结构的沟道区域下面的一对第一掺杂区域。 可以蚀刻每个沟槽的底壁处的衬底以增加每个沟槽的深度。 在每个沟槽的底壁处蚀刻衬底可以去除每个沟槽下的每个第一掺杂剂区域的一部分。 翅片结构下面的一对第一掺杂剂区域的剩余部分可以至少部分地限定finFET器件的穿通阻挡区域。