Laterally supported handle wafer for through-wafer reactive-ion etch micromachining
    7.
    发明授权
    Laterally supported handle wafer for through-wafer reactive-ion etch micromachining 失效
    用于通过晶片反应离子蚀刻微加工的侧面支撑的处理晶片

    公开(公告)号:US06733681B1

    公开(公告)日:2004-05-11

    申请号:US09707698

    申请日:2000-11-07

    IPC分类号: B81C100

    摘要: A method of handling a wafer for through-wafer plasma etching includes lateral support provided between a handle wafer and a product wafer without wafer bonding or an adhesive film using mating mechanical structures. The product wafer is easily separated from the handle wafer following etching without stripping or cleaning. Because the connection between the wafers is mechanical, not from an adhesive layer/bonded layer, a wafer can be etched, inspected, and subsequently continue to be etched without the hindrance of repeated bonding, separation, and cleaning. A non-bonded support for released devices following a through-etch process is also provided.

    摘要翻译: 用于晶圆等离子体蚀刻处理晶片的方法包括在晶片接合之间提供的手柄晶片和产品晶片之间的侧向支撑,或者使用配合机械结构的粘合膜。 在没有剥离或清洁的情况下,产品晶片在蚀刻之后容易地与处理晶片分离。 因为晶片之间的连接是机械的,而不是粘合层/接合层,所以可以蚀刻,检查晶片并且随后继续蚀刻晶片,而不会重复地进行接合,分离和清洁。 还提供了在通过蚀刻工艺之后的释放器件的非接合支撑。