Magnetic field direction sensor
    1.
    发明授权
    Magnetic field direction sensor 有权
    磁场方向传感器

    公开(公告)号:US09377327B2

    公开(公告)日:2016-06-28

    申请号:US13931148

    申请日:2013-06-28

    Inventor: Jan Kubik

    CPC classification number: G01D5/16 G01R33/0005 G01R33/0094 G01R33/02 G01R33/09

    Abstract: A magnetic direction sensor, comprising a first array of magneto-resistive elements, said array having a first array primary direction and wherein some but not all of the magneto-resistive elements are wholly or partially provided at a first angle to the primary direction, and the remaining elements are also inclined with respect to the primary direction.

    Abstract translation: 一种磁方向传感器,包括第一磁阻元件阵列,所述阵列具有第一阵列主方向,并且其中一些但不是全部的磁阻元件全部或部分地设置成与主方向成第一角度,并且 剩余的元件也相对于主要方向倾斜。

    Systems, circuits and methods for determining a position of a movable object

    公开(公告)号:US10551215B2

    公开(公告)日:2020-02-04

    申请号:US14737403

    申请日:2015-06-11

    Abstract: An embodiment of a position sensing system includes a signal generation circuit to generate an excitation signal according to a selected characteristic signal, a drive circuit to drive an excitation source with the excitation signal, an input circuit to receive a sensor output while driving the excitation source, a signal detection circuit to identify a component of the sensor output corresponding to the characteristic signal, and a control circuit to determine the position of the movable object as a function of the identified component of the sensor output. The positioning system may be included an electronic camera, where the movable object may be a lens. The excitation source may be a conductive coil, the excitation a magnetic field, and the sensor a magneto resistive sensor. Alternatively, the excitation source may be an optical excitation source, the excitation an optical excitation, and the sensor an optical sensor.

    PLATED METALLIZATION STRUCTURES
    5.
    发明申请

    公开(公告)号:US20190148229A1

    公开(公告)日:2019-05-16

    申请号:US15810836

    申请日:2017-11-13

    Abstract: The disclosed technology generally relates to forming metallization structures for integrated circuit devices by plating, and more particularly to plating metallization structures that are thicker than masking layers used to define the metallization structures. In one aspect, a method of metallizing an integrated circuit device includes plating a first metal on a substrate in a first opening formed through a first masking layer, where the first opening defines a first region of the substrate, and plating a second metal on the substrate in a second opening formed through a second masking layer, where the second opening defines a second region of the substrate. The second opening is wider than the first opening and the second region encompasses the first region of the substrate.

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