Multi-level non-volatile memory cell with high-VT enhanced BTBT device
    1.
    发明授权
    Multi-level non-volatile memory cell with high-VT enhanced BTBT device 有权
    具有高VT增强BTBT器件的多级非易失性存储单元

    公开(公告)号:US07652921B2

    公开(公告)日:2010-01-26

    申请号:US12080127

    申请日:2008-03-31

    CPC classification number: G11C16/0441

    Abstract: The present disclosure provides a Non-Volatile Memory (NVM) cell and programming method thereof. The cell can denote at least two logic levels. The cell has a read-transistor with a floating gate, and Band-To-Band-Tunneling device (BTBT device) sharing the floating gate with the read-transistor. The BTBT device is configured as an injection device for injecting a first charge onto the floating gate when the BTBT device is biased with a first gate bias voltage such that the BTBT device is in accumulation, to set at least one of the logic levels. A first electrode is coupled to bias the BTBT device with a first bias voltage that is higher than the first threshold voltage. The first bias voltage is controlled such that the BTBT device is in accumulation during a write operation. The injected amount of charge on the floating gate is determined by the first bias voltage.

    Abstract translation: 本公开提供了一种非易失性存储器(NVM)单元及其编程方法。 该单元可以表示至少两个逻辑电平。 该单元具有带有浮动栅极的读晶体管,以及与读晶体管共享浮置栅极的带对带隧穿装置(BTBT器件)。 BTBT器件被配置为当BTBT器件被偏置有第一栅极偏置电压以使得BTBT器件处于积累状态时将第一电荷注入到浮置栅极上的注入器件,以设置至少一个逻辑电平。 第一电极被耦合以利用高于第一阈值电压的第一偏压来偏置BTBT器件。 控制第一偏置电压,使得BTBT器件在写入操作期间处于积累状态。 浮置栅极上的注入量由第一偏置电压决定。

    Magnet
    2.
    外观设计
    Magnet 有权

    公开(公告)号:USD1039353S1

    公开(公告)日:2024-08-20

    申请号:US29782500

    申请日:2021-05-07

    Applicant: Yang He Bin Wang

    Designer: Yang He Bin Wang

    Abstract: FIG. 1 is a perspective view of a magnet showing our new design;
    FIG. 2 is a front elevation view thereof;
    FIG. 3 is a rear elevation view thereof;
    FIG. 4 is a left side elevation view thereof;
    FIG. 5 is a right side elevation view thereof;
    FIG. 6 is a top plan view thereof; and,
    FIG. 7 is a bottom plan view thereof.
    The broken line showing of a magnet is for the purpose of illustrating portions of the article and forms no part of the claimed design.

    Hair clipper
    3.
    外观设计

    公开(公告)号:USD972780S1

    公开(公告)日:2022-12-13

    申请号:US29828970

    申请日:2022-03-02

    Applicant: Bin Wang

    Designer: Bin Wang

    Hair trimmer
    4.
    外观设计

    公开(公告)号:USD972779S1

    公开(公告)日:2022-12-13

    申请号:US29828969

    申请日:2022-03-02

    Applicant: Bin Wang

    Designer: Bin Wang

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