公开(公告)号：US20210003385A1

公开(公告)日：2021-01-07

申请号：US16913645

申请日：2020-06-26

Applicant: Apple Inc.

Inventor： Fei Tan ,  Arnaud Laflaquiere ,  Chin Han Lin ,  Keith Lyon ,  Marc A. Drader ,  Weiping Li

IPC: G01B9/02 ,  H01S5/026 ,  H01S5/30 ,  H01S5/183 ,  H01S5/343

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

公开(公告)号：US20230034270A1

公开(公告)日：2023-02-02

申请号：US17865169

申请日：2022-07-14

Applicant: Apple Inc.

Inventor： Brian S. Medower ,  Eamon H. O'Connor ,  Keith Lyon ,  Marc A. Drader ,  Salman Karbasi ,  Shifa Xu ,  Yazan Z. Alnahhas

IPC: H01S5/183 ,  H01S5/42 ,  H01S5/00 ,  F21V8/00

Abstract: An electronic device includes a substrate, a set of light emitters on the substrate and arranged in a plurality of axisymmetric light emitter groups, a set of lenses including a different lens disposed over each axisymmetric light emitter group of the plurality of axisymmetric light emitter groups, and a set of optical fibers. At least one optical fiber in the set of optical fibers has a proximal end, a distal end, and a bend between the proximal end and the distal end. The proximal end is positioned to receive light, through a respective lens in the set of lenses, from the light emitters of a respective axisymmetric light emitter group in the plurality of axisymmetric light emitter groups.

公开(公告)号：US20230152081A1

公开(公告)日：2023-05-18

申请号：US18094255

申请日：2023-01-06

Applicant: Apple Inc.

Inventor： Fei Tan ,  Arnaud Laflaquiere ,  Chin Han Lin ,  Keith Lyon ,  Marc A. Drader ,  Weiping Li

IPC: G01B9/02097 ,  H01S5/026 ,  H01S5/343 ,  H01S5/183 ,  H01S5/30 ,  G01B9/02 ,  G01B11/02 ,  G01S17/34 ,  G01S7/4912

CPC classification number: G01B9/02097 ,  H01S5/0262 ,  H01S5/3432 ,  H01S5/18313 ,  H01S5/3095 ,  G01B9/02092 ,  G01B11/026 ,  H01S5/183 ,  G01S17/34 ,  G01S7/4916

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

公开(公告)号：US11549799B2

公开(公告)日：2023-01-10

申请号：US16913645

申请日：2020-06-26

Applicant: Apple Inc.

Inventor： Fei Tan ,  Arnaud Laflaquiere ,  Chin Han Lin ,  Keith Lyon ,  Marc A. Drader ,  Weiping Li

IPC: G01B9/02 ,  G01B9/02097 ,  H01S5/026 ,  H01S5/343 ,  H01S5/183 ,  H01S5/30 ,  G01B11/02 ,  G01S17/34 ,  G01S7/4912

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.