公开(公告)号：US11286556B2

公开(公告)日：2022-03-29

申请号：US16848113

申请日：2020-04-14

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Wei Lei ,  Sang Ho Yu

IPC: C23C16/18 ,  C23C16/505 ,  C23C16/455 ,  C23C16/04 ,  H01L21/768 ,  C23C16/34 ,  H01L21/285 ,  H01L21/3205

Abstract: Methods for selectively depositing on surfaces are disclosed. Some embodiments of the disclosure utilize an organometallic precursor that is substantially free of halogen and substantially free of oxygen. Deposition is performed to selectively deposit a metal film on a non-metallic surface over a metallic surface. Some embodiments of the disclosure relate to methods of gap filling.

公开(公告)号：US12094785B2

公开(公告)日：2024-09-17

申请号：US17551381

申请日：2021-12-15

Applicant: Applied Materials, Inc.

Inventor： Thomas Anthony Empante ,  Avgerinos V. Gelatos ,  Zhibo Yuan ,  Liqi Wu ,  Joung Joo Lee ,  Byunghoon Yoon

IPC: H01L21/8238 ,  H01L27/092 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/823814 ,  H01L27/092 ,  H01L21/28518 ,  H01L21/76843

Abstract: Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises patterning a substrate to form a first opening and a second opening, the substrate comprising an n transistor and a p transistor, the first opening over the n transistor and the second opening over the p transistor. The substrate may be pre-cleaned. A ruthenium silicide (RuSi) layer is selectively deposited on the p transistor. A titanium silicide (TiSi) layer is formed on the n transistor and the p transistor. An optional barrier layer may be formed on the titanium silicide (TiSi) layer. The method may be performed in a processing chamber without breaking vacuum.

公开(公告)号：US20230287022A1

公开(公告)日：2023-09-14

申请号：US17694627

申请日：2022-03-14

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Yuri Vladimirovich Barsukov ,  Avgerinos V. Gelatos ,  Joung Joo Lee

IPC: C07F11/00 ,  C07F15/00 ,  C09D1/00 ,  C23C16/455 ,  C23C16/18

CPC classification number: C07F11/00 ,  C07F15/0046 ,  C09D1/00 ,  C23C16/45525 ,  C23C16/18

Abstract: Methods for depositing a film using a non-halide oxygen-free organometallic precursors are disclosed. The method includes forming the film on a substrate surface by exposing the surface to the precursor and a reducing agent, the precursor has a general formula (1): M-L1L2, wherein M is a metal, L1 is a first aromatic ligand having a hapticity selected from η3, η5, or η6, L2 is a ligand having a hapticity selected from of η3, η4, η5, η6, η7, η8, η9 or η10. The first aromatic ligand, L1, may include a structure according to formula (II)




wherein each of R1, R2, R3, R4, R5 and R6 is independently selected from a group consisting of H, methyl, ethyl, n-propyl, isopropyl, n-butyl and iso-butyl. The ligand, L2, can be independently selected from a group consisting of hexa-1,3,5-triene, 2-methylene-1,3-propanediyl, 1,2-diethenylcyclohex-1-ene, cyclooctatetraene, cyclooctatetraenide anion, styrene, o-quinodimethane, phenyl thiocyanate, phenyl isothiocyanate, (3-methylphenyl)-methylene and derivatives thereof.

公开(公告)号：US20210214842A1

公开(公告)日：2021-07-15

申请号：US17140419

申请日：2021-01-04

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Seshadri Ganguli ,  Xi Cen

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/18 ,  C23C16/455 ,  H01L21/768

Abstract: Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L1(L2)y, wherein M is a metal, L1 is an aromatic ligand, L2 is an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the L2 comprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.

公开(公告)号：US12000044B2

公开(公告)日：2024-06-04

申请号：US16448449

申请日：2019-06-21

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Seshadri Ganguli ,  Byunghoon Yoon ,  Wei Min Chen

IPC: C23C16/455 ,  C23C16/06

CPC classification number: C23C16/45553 ,  C23C16/06 ,  C23C16/45544

Abstract: Methods of depositing a metal film with high purity are discussed. Some embodiments utilize a thermal ALD process comprising an alkyl halide and a metal precursor. Some embodiments selectively deposit a metal film with high purity on a metal surface over a dielectric surface. Some embodiments selectively deposit a metal film with high purity on a dielectric surface over a metal surface. Some embodiments deposit a metal film with greater than 99% metal atoms on an atomic basis.

公开(公告)号：US11680312B2

公开(公告)日：2023-06-20

申请号：US17850022

申请日：2022-06-27

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Seshadri Ganguli ,  Xi Cen

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/18 ,  C23C16/455 ,  H01L21/768 ,  H01L23/532

CPC classification number: C23C16/02 ,  C23C16/04 ,  C23C16/18 ,  C23C16/45534 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266

Abstract: Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L1(L2)y, wherein M is a metal, L1 is an aromatic ligand, L2 is an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the L2 comprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.

公开(公告)号：US20210285102A1

公开(公告)日：2021-09-16

申请号：US17198576

申请日：2021-03-11

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Liqi Wu ,  Joung Joo Lee ,  Kai Wu ,  Xi Cen ,  Wei Lei ,  Sang Ho Yu ,  Seshadri Ganguli

IPC: C23C16/455 ,  C23C16/02 ,  C23C28/02

Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

公开(公告)号：US20220333232A1

公开(公告)日：2022-10-20

申请号：US17850022

申请日：2022-06-27

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Seshadri Ganguli ,  Xi Cen

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/18 ,  C23C16/455 ,  H01L21/768

Abstract: Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L1(L2)y, wherein M is a metal, L1 is an aromatic ligand, L2 is an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the L2 comprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.

公开(公告)号：US20210317570A1

公开(公告)日：2021-10-14

申请号：US16848113

申请日：2020-04-14

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Wei Lei ,  Sang Ho Yu

IPC: C23C16/18 ,  C23C16/505

Abstract: Methods for selectively depositing on surfaces are disclosed. Some embodiments of the disclosure utilize an organometallic precursor that is substantially free of halogen and substantially free of oxygen. Deposition is performed to selectively deposit a metal film on a non-metallic surface over a metallic surface. Some embodiments of the disclosure relate to methods of gap filling.

公开(公告)号：US20190390340A1

公开(公告)日：2019-12-26

申请号：US16448449

申请日：2019-06-21

Applicant: Applied Materials, Inc

Inventor： Sang Ho Yu ,  Seshadri Ganguli ,  Byunghoon Yoon ,  Wei Min Chen

IPC: C23C16/455 ,  C23C16/06

Abstract: Methods of depositing a metal film with high purity are discussed. Some embodiments utilize a thermal ALD process comprising an alkyl halide and a metal precursor. Some embodiments selectively deposit a metal film with high purity on a metal surface over a dielectric surface. Some embodiments selectively deposit a metal film with high purity on a dielectric surface over a metal surface. Some embodiments deposit a metal film with greater than 99% metal atoms on an atomic basis.