公开(公告)号：US20220123123A1

公开(公告)日：2022-04-21

申请号：US17498098

申请日：2021-10-11

Applicant: Applied Materials, Inc.

Inventor： Myungsun Kim ,  Andy Lo ,  Eric Davey ,  Michael Stolfi ,  Benjamin Colombeau

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/786 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/306 ,  H01L29/66

Abstract: Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise an oxide layer and a semiconductor material layer between source regions and drain regions of the device. The method includes growing a conformal epitaxial layer on a nanosheet channel layer, followed by radical plasma oxidation (RPO) to oxidize the conformal epitaxial layer. An alternative method includes growing a conformal epitaxial layer on a nanosheet channel layer, followed by a surface treatment, and then radical plasma oxidation (RPO) to oxidize the conformal epitaxial layer.

公开(公告)号：US20220375751A1

公开(公告)日：2022-11-24

申请号：US17463966

申请日：2021-09-01

Applicant: Applied Materials, Inc.

Inventor： Yi-Chiau HUANG ,  Songjae Lee ,  Manoj Vellaikal ,  Chen-Ying Wu ,  Eric Davey ,  Saurabh Chopra

IPC: H01L21/02 ,  C30B25/18 ,  C23C16/02 ,  C23C16/54

Abstract: Embodiments of the present disclosure generally relate to an integrated substrate processing system for cleaning a substrate surface and subsequently performing an epitaxial deposition process thereon. A processing system includes a film formation chamber, a transfer chamber coupled to the film formation chamber, and an oxide removal chamber coupled to the transfer chamber, the oxide removal chamber having a substrate support. The processing system includes a controller configured to introduce a process gas mixture into the oxide removal chamber, the process gas mixture including a fluorine-containing gas and a vapor including at least one of water, an alcohol, an organic acid, or combinations thereof. The controller is configured to expose a substrate positioned on the substrate support to the process gas mixture, thereby removing an oxide film from the substrate.

公开(公告)号：US10786885B2

公开(公告)日：2020-09-29

申请号：US15875867

申请日：2018-01-19

Applicant: Applied Materials, Inc.

Inventor： Robert D. Tolles ,  Gregory E. Menk ,  Eric Davey ,  You Wang ,  Huyen Karen Tran ,  Fred C. Redeker ,  Veera Raghava Reddy Kakireddy ,  Ekaterina Mikhaylichenko ,  Jay Gurusamy

IPC: B24D11/00 ,  H01L21/306 ,  C09K3/14 ,  B24D3/22 ,  B24B37/26 ,  B24B37/20

Abstract: A method and apparatus for polishing a substrate that includes a polishing article comprising a polymeric sheet having a raised surface texture, which is formed on the surface of the polymeric sheet is provided. According to one or more implementations of the present disclosure, an advanced polishing article has been developed, which does not require abrasive pad conditioning. In some implementations of the present disclosure, the advanced polishing article comprises a polymeric sheet having a polishing surface with a raised surface texture or “micro-features” and/or a plurality of grooves or “macro-features” formed in the polishing surface. In some implementations, the raised surface texture is embossed, etched, machined or otherwise formed in the polishing surface prior to installing and using the advanced polishing article in a polishing system. In one implementation, the raised features have a height within one order of magnitude of the features removed from the substrate during polishing.