公开(公告)号：US12255054B2

公开(公告)日：2025-03-18

申请号：US17127201

申请日：2020-12-18

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Zubin Huang ,  Manjunath Veerappa Chobari Patil ,  Nitin Pathak ,  Yi Yang ,  Badri N. Ramamurthi ,  Truong Van Nguyen ,  Rui Cheng ,  Diwakar Kedlaya

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/458 ,  C23C16/50

Abstract: Exemplary semiconductor processing chambers include a chamber body defining a processing region. The chambers may include a substrate support disposed within the processing region. The substrate support may have an upper surface that defines a recessed substrate seat. The chambers may include a shadow ring disposed above the substrate seat and the upper surface. The shadow ring may extend about a peripheral edge of the substrate seat. The chambers may include bevel purge openings defined within the substrate support proximate the peripheral edge. A bottom surface of the shadow ring may be spaced apart from a top surface of the upper surface to form a purge gas flow path that extends from the bevel purge openings along the shadow ring. A space formed between the shadow ring and the substrate seat may define a process gas flow path. The gas flow paths may be in fluid communication with one another.

公开(公告)号：US20220093371A1

公开(公告)日：2022-03-24

申请号：US17026885

申请日：2020-09-21

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Truong Van Nguyen ,  Rui Cheng ,  Diwakar Kedlaya ,  Manjunath Veerappa Chobari Patil ,  Prashant A. Desai ,  Paul L. Brillhart ,  Karthik Janakiraman ,  Pavan Kumar Murali Kumar

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/44

Abstract: Exemplary semiconductor processing systems include a chamber body having sidewalls and a base. The systems may include a substrate support extending through the base. The substrate support may include a support plate defining lift pin locations and a shaft coupled with the support plate. The systems may include a shield coupled with the shaft and extending below the support plate. The shield may define a central aperture that extends beyond an outer periphery of the shaft. The systems may include a purge baffle coupled with the shield at a position that is beyond the central aperture such that a space between the purge baffle and the shaft is in fluid communication with a space between the shield and the support plate. The purge baffle may extend along at least a portion of the shaft. The systems may include a purge gas source coupled with the purge baffle.

公开(公告)号：US20250140537A1

公开(公告)日：2025-05-01

申请号：US18538100

申请日：2023-12-13

Applicant: Applied Materials, Inc.

Inventor： Zaoyuan Ge ,  Manjunath Veerappa Chobari Patil ,  Pavan Kumar S M ,  Dinesh Babu ,  Nuo Wang ,  Kaili Yu ,  Xinyi Zhong ,  Bharati Neelamraju ,  Liangfa Hu ,  Neela Ayalasomayajula ,  Sungwon Ha ,  Prashant Kumar Kulshreshtha ,  Amit Bansal ,  Daemian Raj Benjamin Raj ,  Badri N. Ramamurthi ,  Travis Mazzy ,  Mohammed Salman Mohiuddin ,  Karthik Suresh Menon ,  Lihua Wu ,  Prasath Poomani

IPC: H01J37/32 ,  B08B5/00 ,  B08B9/00

Abstract: Semiconductor processing chambers and systems, as well as methods of cleaning such chambers and systems are provided. Processing chambers and systems include a chamber body that defines a processing region, a liner positioned within the chamber body that defines a liner volume, a faceplate positioned atop the liner, a substrate support disposed within the chamber body, and a cleaning gas source coupled with the liner volume through a cleaning gas plenum and one or more inlet apertures. Systems and chambers include where at least one of the one or more inlet apertures is disposed in the processing region between the faceplate and a bottom wall of the chamber body.

公开(公告)号：US20220199373A1

公开(公告)日：2022-06-23

申请号：US17127201

申请日：2020-12-18

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Zubin Huang ,  Manjunath Veerappa Chobari Patil ,  Nitin Pathak ,  Yi Yang ,  Badri N. Ramamurthi ,  Truong Van Nguyen ,  Rui Cheng ,  Diwakar Kedlaya

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/458 ,  C23C16/44

Abstract: Exemplary semiconductor processing chambers include a chamber body defining a processing region. The chambers may include a substrate support disposed within the processing region. The substrate support may have an upper surface that defines a recessed substrate seat. The chambers may include a shadow ring disposed above the substrate seat and the upper surface. The shadow ring may extend about a peripheral edge of the substrate seat. The chambers may include bevel purge openings defined within the substrate support proximate the peripheral edge. A bottom surface of the shadow ring may be spaced apart from a top surface of the upper surface to form a purge gas flow path that extends from the bevel purge openings along the shadow ring. A space formed between the shadow ring and the substrate seat may define a process gas flow path. The gas flow paths may be in fluid communication with one another.

公开(公告)号：US20220108891A1

公开(公告)日：2022-04-07

申请号：US17064389

申请日：2020-10-06

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Manjunath Veerappa Chobari Patil ,  Diwakar Kedlaya ,  Truong Van Nguyen ,  Pavan Kumar Murali Kumar ,  Subrahmanyam Veerisetty ,  Venkata Sharat Chandra Parimi ,  Fang Ruan

IPC: H01L21/033 ,  H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  H01L21/02 ,  C23C16/04

Abstract: Exemplary semiconductor processing chambers may include a faceplate assembly characterized by at least one surface defining a number of voids. Each void is configured to receive an interchangeable thermal body that can be selected from multiple interchangeable thermal bodies. Exemplary semiconductor processing chambers may also include a gas box characterized by movable members. Each movable member is configured to engage a delivery port and is movable to provide flow control for a gas being delivered to the processing volume through a gas flow path. Zoned flow and/or temperature control may be provided by the faceplate assembly, the gas box, or both.