CAPACITIVE METHOD OF DETECTING WAFER CHUCKING AND DE-CHUCKING

    公开(公告)号:US20220301915A1

    公开(公告)日:2022-09-22

    申请号:US17208441

    申请日:2021-03-22

    Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The assemblies may include a support stem coupled with the chuck body. The assemblies may include a heater embedded within the chuck body. The assemblies may include a first bipolar electrode embedded within the electrostatic chuck body between the heater and support surface. The assemblies may include a second bipolar electrode embedded within the chuck body between the heater and support surface. The assemblies may include at least one inner capacitive sensor embedded within the electrostatic chuck body at a position proximate a center of the substrate seat. The assemblies may include at least one outer capacitive sensor embedded within the electrostatic chuck body at a position proximate a peripheral edge of the substrate seat.

    GAS MIXER TO ENABLE RPS PURGING
    2.
    发明申请

    公开(公告)号:US20220122851A1

    公开(公告)日:2022-04-21

    申请号:US17071618

    申请日:2020-10-15

    Abstract: A semiconductor processing system includes a remote plasma source (RPS), a faceplate, and an output manifold positioned between the RPS and the faceplate. The output manifold is characterized by a plurality of purge outlets that are fluidly coupled with a purge gas source and a plurality of deposition outlets that are fluidly coupled with a deposition gas source. A delivery tube extends between and fluidly couples the RPS and the faceplate. The delivery tube is characterized by a generally cylindrical sidewall that defines an upper plurality of apertures that are arranged in a radial pattern. Each of the upper apertures is fluidly coupled with one of the purge outlets. The generally cylindrical sidewall defines a lower plurality of apertures that are arranged in a radial pattern and below the upper plurality of apertures. Each of the lower apertures is fluidly coupled with one of the deposition outlets.

    MODULAR PRECURSOR DELIVERY AND SPLITTING FOR FAST SWITCHING

    公开(公告)号:US20240234167A1

    公开(公告)日:2024-07-11

    申请号:US18095262

    申请日:2023-01-10

    CPC classification number: H01L21/67017 H01L21/67103 H01L21/67196

    Abstract: Exemplary substrate processing systems may include a lid plate. The systems may include a plurality of processing regions. The systems may include at least one splitter. Each splitter may include a top surface and side surfaces. Each splitter may define an inlet and a plurality of outlets. Each inlet and outlet may extend through a side surface. Each splitter may define an inlet lumen that extends from the fluid inlet to a hub. Each splitter may define a plurality of outlet lumens that each extend from the hub to one of the outlets. Each of the outlet lumens may have a same length. The systems may include a plurality of output manifolds. Each of the output manifolds may be coupled with a respective processing region. The systems may include a plurality of valves. At least one valve may be coupled between each outlet and an output manifold.

    MULTI-PORT CROSS FLOW SYSTEM
    6.
    发明申请

    公开(公告)号:US20250037980A1

    公开(公告)日:2025-01-30

    申请号:US18359772

    申请日:2023-07-26

    Abstract: A processing chamber and port adaptor are provided. Processing chambers include a chamber body having a lid coupled to the first end of the chamber body, a gas ring adjacent the first end of the chamber body, and a substrate support, where a processing region is defined between the substrate support and the lid. The processing chamber includes a port adapter coupled to the second end of the chamber body. The port adapter includes a body defining a plurality of apertures in fluid communication with the processing region, where each of the apertures are spaced apart along the body such that a distance between adjacent apertures is within about 20% of an average aperture spacing distance, an individually controllable valve fluidly coupled to one or more of the plurality of apertures, and an exhaust system in fluid communication with a system foreline and the plurality of apertures.

    Capacitive method of detecting wafer chucking and de-chucking

    公开(公告)号:US11610800B2

    公开(公告)日:2023-03-21

    申请号:US17208441

    申请日:2021-03-22

    Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The assemblies may include a support stem coupled with the chuck body. The assemblies may include a heater embedded within the chuck body. The assemblies may include a first bipolar electrode embedded within the electrostatic chuck body between the heater and support surface. The assemblies may include a second bipolar electrode embedded within the chuck body between the heater and support surface. The assemblies may include at least one inner capacitive sensor embedded within the electrostatic chuck body at a position proximate a center of the substrate seat. The assemblies may include at least one outer capacitive sensor embedded within the electrostatic chuck body at a position proximate a peripheral edge of the substrate seat.

    Dome stress isolating layer
    8.
    发明授权

    公开(公告)号:US11326256B2

    公开(公告)日:2022-05-10

    申请号:US16691259

    申请日:2019-11-21

    Abstract: Embodiments described herein relate to apparatus and techniques for mechanical isolation and thermal insulation in a process chamber. In one embodiment, an insulating layer is disposed between a dome assembly and a gas ring. The insulating layer is configured to maintain a temperature of the dome assembly and prevent thermal energy transfer from the dome assembly to the gas ring. The insulating layer provides mechanical isolation of the dome assembly from the gas ring. The insulating layer also provides thermal insulation between the dome assembly and the gas ring. The insulating layer may be fabricated from a polyimide containing material, which substantially reduces an occurrence of deformation of the insulating layer.

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