公开(公告)号：US20240096605A1

公开(公告)日：2024-03-21

申请号：US17946947

申请日：2022-09-16

Applicant: Applied Materials, Inc.

Inventor： Arun Kumar Kotrappa ,  CHANDRASHEKARA BAGINAGERE ,  RAMCHARAN SUNDAR ,  SEYYED FAZELI ,  ANANTHA SUBRAMANI ,  SIYU ZHU ,  AKHIL SINGHAL ,  PHILIP ALLAN KRAUS

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  H01L21/687

CPC classification number: H01J37/32715 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/505 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/68742 ,  H01J37/32082 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/332

Abstract: Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a chamber, a pedestal in the chamber, and a first gas feed system on a first side of the pedestal. In an embodiment, the first gas feed system comprises a first exhaust line with a first valve to open and close the first exhaust line, and a first source gas feed line with a second valve to open and close the first source gas feed line. In an embodiment, the semiconductor processing tool further comprises a second gas feed system on a second side of the pedestal. In an embodiment, the second gas feed system comprises a second exhaust line with a third valve to open and close the second exhaust line, and a second source gas feed line with a fourth valve to open and close the second source gas feed line.

公开(公告)号：US20240184207A1

公开(公告)日：2024-06-06

申请号：US18379106

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Zhiyu Huang ,  BOCHENG CAO ,  SIYU ZHU ,  HANG YU ,  YUNG-CHEN LIN ,  CHI-I LANG

IPC: G03F7/11

CPC classification number: G03F7/11

Abstract: Embodiments disclosed herein include a method of developing a patterning stack. In an embodiment, the method comprises providing a patterning stack, where the patterning stack comprises an underlayer and a photoresist over the underlayer, and where the underlayer has a first adhesion strength with the photoresist. The method may further comprise exposing and developing the photoresist with electromagnetic radiation and a developer, where scum remains on a surface of the underlayer. In an embodiment, the method further comprises treating the underlayer so that the underlayer has a second adhesion strength with the scum, and removing the scum.