公开(公告)号：US20240090213A1

公开(公告)日：2024-03-14

申请号：US18238954

申请日：2023-08-28

Applicant: Applied Materials, Inc.

Inventor： Jialiang WANG ,  Soonil LEE ,  Eswaranand VENKATASUBRAMANIAN ,  Chang Seok KANG ,  Sanjay G. KAMATH ,  Abhijit B. MALLICK ,  Srinivas GUGGILLA ,  Amy CHILD ,  Sung-Kwan KANG ,  Balasubramanian PRANATHARTHIHARAN

IPC: H10B41/35 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/67 ,  H10B43/10

CPC classification number: H10B41/35 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67063 ,  H10B43/10 ,  H10B80/00

Abstract: A method of forming a semiconductor memory device includes simultaneously filling a top portion of a first high aspect ratio (HAR) structure and a top portion a second HAR structure with a silicon-containing sacrificial layer by a cycle of a deposition process and an etch process, wherein the first HAR structure has a critical dimension (CD) of between 150 nm and 250 nm, and the second HAR structure has a CD of between 250 nm and 400 nm.

公开(公告)号：US20250046610A1

公开(公告)日：2025-02-06

申请号：US18364249

申请日：2023-08-02

Applicant: Applied Materials, Inc.

Inventor： Jialiang WANG ,  Guangyan ZHONG ,  Soonil LEE ,  Eswaranand VENKATASUBRAMANIAN ,  Abhijit B. MALLICK

IPC: H01L21/033 ,  C23C16/27 ,  C23C16/507 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311

Abstract: The present disclosure provides a method of processing a substrate. The method includes flowing a deposition gas comprising a hydrocarbon compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. A plasma is generated at the substrate by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film is doped with a metal dopant to form a doped diamond-like carbon film. The metal dopant is thermally annealed to the doped diamond-like carbon film.

公开(公告)号：US20250046599A1

公开(公告)日：2025-02-06

申请号：US18364260

申请日：2023-08-02

Applicant: Applied Materials, Inc.

Inventor： Jialiang WANG ,  Soonil LEE ,  Eswaranand VENKATASUBRAMANIAN ,  Abhijit B. MALLICK

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/458 ,  C23C16/509 ,  C23C16/56 ,  H01J37/32 ,  H01L21/311

Abstract: The present disclosure provides a method. The method includes positioning a substrate on an electrostatic chuck in a processing volume of a processing chamber. A plasma is generated at the substrate by applying a RF bias to the electrostatic chuck. A first layer of a diamond-like carbon film is deposited in an opening of the substrate by flowing a first deposition gas comprising a hydrocarbon compound into the processing volume. The first layer is etched to remove a portion of the first layer. A second layer of the diamond-like carbon film is deposited in the opening to fill an upper portion of the opening by flowing a second deposition gas into the processing volume.

公开(公告)号：US20250046611A1

公开(公告)日：2025-02-06

申请号：US18364507

申请日：2023-08-03

Applicant: Applied Materials, Inc.

Inventor： Jialiang WANG ,  Soonil LEE ,  Eswaranand VENKATASUBRAMANIAN ,  Abhijit B. MALLICK

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/509 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3115

Abstract: The present disclosure provides method of processing a substrate. The method includes flowing a deposition gas comprising a hydrocarbon compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. A plasma is generated at the substrate by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film is doped film with a hydrogen dopant to form a doped diamond-like carbon film. The hydrogen dopant is thermally annealing to the doped diamond-like carbon film.