公开(公告)号：US20130149468A1

公开(公告)日：2013-06-13

申请号：US13759020

申请日：2013-02-04

Applicant: Applied Materials, Inc.

Inventor： Tatsuya Sato ,  Patricia M. Liu ,  Fanos Christodoulou

IPC: H01L21/02

CPC classification number: H01L21/02 ,  H01J37/32862 ,  H01L21/28202 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/31641 ,  H01L21/31645 ,  Y10T29/41

Abstract: In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.

Abstract translation: 在第一方面，提供了第一种方法。 第一种方法包括以下步骤：（1）用积极的等离子体预处理室; （2）将基板装载到处理室中; 和（3）在处理室内的基板上进行等离子体氮化处理。 使用等离子体功率预处理室，该等离子体功率比基板的等离子体氮化期间使用的等离子体功率高至少150％。 提供了许多其他方面。

公开(公告)号：US11566327B2

公开(公告)日：2023-01-31

申请号：US17100249

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Ilker Durukan ,  Muhammad M. Rasheed ,  Kenric Choi ,  Tatsuya Sato

IPC: C23C16/40 ,  C23C16/455

Abstract: Methods and apparatus to reduce pressure fluctuations in a chemical delivery system for a process chamber are provided herein. In some embodiments, a chemical delivery system for a process chamber, includes: a carrier gas supply; an ampoule fluidly coupled to the carrier gas supply via a first supply line, wherein the ampoule is configured to supply one or more process gases to the process chamber via a second supply line; an inlet valve disposed in line with the first supply line to control a flow of a carrier gas from the carrier gas supply to the ampoule; and a first control valve disposed in line with a pressure regulation line, wherein the pressure regulation line is fluidly coupled to the first supply line at a tee location between the carrier gas supply and the inlet valve.

公开(公告)号：US09275853B2

公开(公告)日：2016-03-01

申请号：US14444783

申请日：2014-07-28

Applicant: Applied Materials, Inc.

Inventor： Tatsuya Sato ,  Steven C. H. Hung ,  Eran Newman

IPC: H01L21/768 ,  H01L29/66 ,  H01L21/02 ,  H01L29/51 ,  H01L29/40 ,  H01L21/306 ,  H01L21/321

CPC classification number: H01L21/02181 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/28176 ,  H01L21/306 ,  H01L21/321 ,  H01L29/401 ,  H01L29/513 ,  H01L29/517

Abstract: Embodiments of the disclosure generally relate to methods of adjusting transistor flat band voltage, and transistor gates formed using the same. In one embodiment, a method sequentially includes cleaning a substrate, annealing the substrate in a nitrogen-containing environment to form silicon-nitrogen bonds, hydroxylating the substrate surface, and depositing a hafnium oxide layer over the substrate. In another embodiment, the method further includes depositing an aluminum oxide layer over the substrate prior to depositing the hafnium oxide layer, and then annealing the substrate.

Abstract translation: 本公开的实施例一般涉及调整晶体管平带电压的方法，以及使用其形成的晶体管栅极。 在一个实施方案中，方法顺序包括清洗基底，在含氮环境中退火基底以形成硅 - 氮键，使基底表面羟化，以及在基底上沉积氧化铪层。 在另一个实施例中，该方法还包括在沉积氧化铪层之前在衬底上沉积氧化铝层，然后对衬底退火。

公开(公告)号：US08658522B2

公开(公告)日：2014-02-25

申请号：US13759020

申请日：2013-02-04

Applicant: Applied Materials, Inc.

Inventor： Tatsuya Sato ,  Patricia M. Liu ,  Fanos Christodoulou

IPC: H01L21/26 ,  H01L21/42

CPC classification number: H01L21/02 ,  H01J37/32862 ,  H01L21/28202 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/31641 ,  H01L21/31645 ,  Y10T29/41

Abstract: In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.

Abstract translation: 在第一方面，提供了第一种方法。 第一种方法包括以下步骤：（1）用积极的等离子体预处理室; （2）将基板装载到处理室中; 和（3）在处理室内的基板上进行等离子体氮化处理。 使用等离子体功率预处理室，该等离子体功率比基板的等离子体氮化期间使用的等离子体功率高至少150％。 提供了许多其他方面。