公开(公告)号：US20030087586A1

公开(公告)日：2003-05-08

申请号：US10005658

申请日：2001-11-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Tony S. Kaushal ,  Chuong Quang Dam ,  Yongqi Hu

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00

CPC classification number: B24B37/013 ,  B24B49/10

Abstract: Endpoint of a chemical mechanical polishing process is detected by monitoring acoustical emissions produced by contact between a polishing pad and a wafer. The acoustic information is resolved into a frequency spectrum utilizing techniques such as fast Fourier transformation. Characteristic changes in frequency spectra of the acoustic emissions reveal transition in polishing between different material layers. CMP endpoint indicated by a change in the acoustic frequency spectrum is validated by correlation with other sensed properties, including but not limited to time-based changes in amplitude of acoustic emissions, frictional coefficient, capacitance, and/or resistance. CMP endpoint revealed by a change in acoustic frequency spectrum can also be validated by comparison with characteristic frequency spectra obtained at endpoints or polishing transitions of prior operational runs.

Abstract translation: 通过监测由抛光垫和晶片之间的接触产生的声发射来检测化学机械抛光工艺的端点。 利用诸如快速傅里叶变换的技术将声信息解析成频谱。 声发射频谱的特征变化显示不同材料层之间的抛光过渡。 由声频谱变化指示的CMP端点通过与其他感测特性的相关性来验证，包括但不限于声发射幅度，摩擦系数，电容和/或电阻的基于时间的变化。 通过声频频谱变化揭示的CMP终点也可以通过与在先前操作运行的端点或抛光转换处获得的特征频谱进行比较来验证。

公开(公告)号：US20020182131A1

公开(公告)日：2002-12-05

申请号：US09872254

申请日：2001-06-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Tony S. Kaushal ,  Shamouil Shamouilian ,  Harshad Borgaonkar ,  Kwok Manus Wong ,  Michael G. Chafin ,  Ashish Bhatnagar

IPC: F28D021/00 ,  B01J035/00 ,  B01J008/02

CPC classification number: H01J37/32844 ,  B01D53/8662 ,  B01D53/885 ,  B01J19/12 ,  B01J19/129 ,  B01J2219/0809 ,  B01J2219/083 ,  B01J2219/0835 ,  B01J2219/0871 ,  B01J2219/0875 ,  B01J2219/0892 ,  C23C16/4412 ,  H01J37/3244 ,  Y02C20/30

Abstract: A substrate processing apparatus has a process chamber with a substrate support, a gas supply to introduce a gas into the chamber, and a gas energizer to energize the gas in the processing of a substrate, thereby generating an effluent gas. A catalytic reactor has an effluent gas inlet to receive the effluent gas and an effluent gas outlet to exhaust treated effluent gas. A heater is adapted to heat the effluent gas in the catalytic reactor. The heated catalytic treatment of the effluent gas abates the hazardous gases in the effluent. An additive gas source and a prescrubber may also be used to further treat the effluent.

Abstract translation: 基板处理装置具有具有基板支撑件的处理室，向室内引入气体的气体供给部，以及在基板的加工中使气体通电的气体增压器，从而产生流出气体。 催化反应器具有用于接收废气的废气入口和用于排出经处理的废气的废气出口。 加热器适于加热催化反应器中的废气。 流出气体的加热催化处理减少流出物中的有害气体。 还可以使用添加气体源和预饱和物来进一步处理流出物。

公开(公告)号：US20030029563A1

公开(公告)日：2003-02-13

申请号：US09927244

申请日：2001-08-10

Applicant: Applied Materials, Inc.

Inventor： Tony S. Kaushal ,  Chuong Quang Dam

IPC: C23F001/02

CPC classification number: H01J37/32477 ,  C23C16/4404

Abstract: Resistance to corrosion in a plasma environment is imparted to components of a semiconductor processing tool by forming a rare earth-containing coating over component surfaces. The plasma-resistant coating may be formed by sputtering rare earth-containing material onto a parent material surface. Subsequent reaction between these deposited materials and the plasma environment creates a plasma-resistant coating. The coating may adhere to the parent material through an intervening adhesion layer, such as a graded subsurface rare earth layer resulting from acceleration of rare earth ions toward the parent material at changed energies prior to formation of the coating.

Abstract translation: 通过在部件表面上形成含稀土的涂层，使等离子体环境中的耐腐蚀性赋予半导体加工工具的部件。 耐等离子体涂层可以通过将含稀土材料溅射到母材表面上而形成。 随后的这些沉积材料与等离子体环境之间的反应产生耐等离子体涂层。 涂层可以通过中间粘附层附着到母体材料上，例如在形成涂层之前以改变的能量将稀土离子加速到母体材料而产生的分级地下稀土层。

公开(公告)号：US20030159657A1

公开(公告)日：2003-08-28

申请号：US10085670

申请日：2002-02-27

Applicant: Applied Materials, Inc.

Inventor： Tony S. Kaushal ,  Chuong Quang Dam ,  Daniel Ashkin

IPC: C23F001/00 ,  C23C016/00

CPC classification number: C04B35/44 ,  C04B2235/3225 ,  C04B2235/764 ,  C04B2235/768 ,  C04B2235/94 ,  C04B2235/96 ,  C04B2235/9692 ,  C23C16/4581 ,  H01J37/32495 ,  H01J37/32642

Abstract: A component of a plasma reactor chamber for processing a semiconductor workpiece, the component being a monolithic ceramic piece formed from a mixture of yttrium aluminum perovskite (YAP) and yttrium aluminum garnet (YAG) formed from a mixture of yttria and alumina powders, the ratio the powders in said mixture being within a range between one ratio at which at least nearly pure yttrium aluminum perovskite is formed and another ratio at which at least nearly pure yttrium aluminum garnet is formed.

Abstract translation: 用于处理半导体工件的等离子体反应器室的组件，该组件是由由氧化钇和氧化铝粉末的混合物形成的由钇铝钙钛矿（YAP）和钇铝石榴石（YAG）的混合物形成的整体陶瓷件， 所述混合物中的粉末在形成至少几乎纯的钇铝钙钛矿的一个比例和形成至少几乎纯的钇铝石榴石的另一比例之间的范围内。

公开(公告)号：US20030029841A1

公开(公告)日：2003-02-13

申请号：US10025144

申请日：2001-12-18

Applicant: Applied Materials, Inc.

Inventor： Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony S. Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred C. Redeker

IPC: C23F001/00 ,  H01L021/461

CPC classification number: H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

Abstract translation: 提供了用于抛光衬底的方法和装置，其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。 在一个方面，提供了一种用于处理衬底的方法，包括将具有形成在其上的导电材料的衬底定位在具有一个或多个旋转载体头和一个或多个可旋转压板的抛光装置中，其中所述载体头包括保持环和 用于固定基板的薄膜和压板具有设置在其上的抛光制品，其以约0.4psi或更大于膜压力的保持环接触压力将基板表面和抛光制品彼此接触，并抛光基板以去除导电 材料。

公开(公告)号：US20020192129A1

公开(公告)日：2002-12-19

申请号：US10219594

申请日：2002-08-14

Applicant: Applied Materials, Inc.

Inventor： Shamouil Shamouilian ,  Mehran Moalem ,  Tony S. Kaushal

IPC: B01D053/68

CPC classification number: C23C16/4412 ,  B01D53/75 ,  B01D53/8659 ,  B01D53/8662

Abstract: An effluent abatement system 200 that may be used to abate F2 gas content of effluent exhausted from a process chamber 35, such as effluent from a CVD chamber cleaning process, includes a catalytic reactor 250 to reduce the content of F2 in the effluent 100. The system may further include a prescrubber 230 to add reactive gases to the effluent 100 and/or to treat the effluent 100 prior to treatment in the catalytic reactor 250. Alternatively reactive gases can be added to the effluent 100 by a gas source 220.

Abstract translation: 可用于消除从处理室35排出的流出物（例如来自CVD室清洁过程）的F 2气体含量的流出物消除系统200包括催化反应器250，以减少流出物100中的F2含量。 系统可以进一步包括预催化剂230以在催化反应器250中处理之前向流出物100中添加反应性气体和/或处理流出物100.可以通过气体源220将反应性气体加入到流出物100中。