公开(公告)号：US20030136332A1

公开(公告)日：2003-07-24

申请号：US10057014

申请日：2002-01-24

申请人： APPLIED MATERIALS INC., A Delaware corporation

发明人： Padmanabhan Krishnaraj ,  Pavel Ionov ,  Canfeng Lai ,  Michael Santiago Cox ,  Shamouil Shamouilian

IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/509 ,  C30B25/105 ,  H01J37/32935 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/76837

摘要： A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.

摘要翻译： 提供了沉积，蚀刻和沉积的连续原位工艺，用于使用等离子体工艺在衬底上形成膜。 可以在没有蚀刻剂气体的单独的等离子体激活的情况下执行回蚀。 沉积，蚀刻和沉积的顺序允许填充高纵横比的特征，而过程的连续性导致改善的均匀性。

公开(公告)号：US20030085205A1

公开(公告)日：2003-05-08

申请号：US09839360

申请日：2001-04-20

申请人： Applied Materials, Inc.

发明人： Canfeng Lai ,  Michael S. Cox ,  Peter K. Loewenhardt ,  Tsutomu Tanaka ,  Shamouil Shamouilian

IPC分类号： C23F001/00 ,  C23C016/00 ,  B23K010/00

CPC分类号： H01J37/32431

摘要： A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.

摘要翻译： 使用环形铁芯的变压器耦合等离子体源沿着环面的中心轴形成具有高密度离子的等离子体。 在一个实施例中，等离子体发生器的芯以垂直对准堆叠以增强等离子体的方向性和发电效率。 在另一个实施例中，芯以横向阵列布置成等离子体发生板，其可被缩放以适应各种尺寸的衬底，包括非常大的衬底。 所获得的等离子体的对称性允许同时处理两个基板，一个在等离子体发生器的两侧。

公开(公告)号：US20020135969A1

公开(公告)日：2002-09-26

申请号：US10095914

申请日：2002-03-12

申请人： Applied Materials, Inc.

发明人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

IPC分类号： H01H001/00

CPC分类号： H01J37/321 ,  C23C16/4586 ,  H01J2237/2001 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

摘要翻译： 静电吸盘具有能够带电的电极，以静电保持基板。 复合层覆盖电极。 复合层包括（1）覆盖电极的中心部分的第一电介质材料，和（2）覆盖电极的周边部分的第二电介质材料，第二电介质材料的组成不同于第一电介质的组成 材料。 卡盘在等离子体处理室中可用于处理诸如半导体晶片的基板。

公开(公告)号：US20020096257A1

公开(公告)日：2002-07-25

申请号：US09767282

申请日：2001-01-22

申请人： Applied Materials, Inc.

发明人： Liang-Guo Wang ,  Kwok M. Wong ,  Shamouil Shamouilian ,  Kartik Ramaswamy

IPC分类号： C23C016/507 ,  H01L021/3065

CPC分类号： H01J37/32137 ,  C23C16/507 ,  H01J37/321

摘要： A plasma processing apparatus and a method of operating a plasma processing apparatus are disclosed. In one embodiment, a first RF signal at a carrier frequency and a second RF signal at a second frequency are generated. An amplitude modulated signal is formed by modulating the first RF signal with the second RF signal. A plasma is generated within the plasma processing chamber using the amplitude modulated signal. Generating plasma using a frequency modulated signal is also disclosed.

摘要翻译： 公开了等离子体处理装置和操作等离子体处理装置的方法。 在一个实施例中，产生载波频率的第一RF信号和第二频率的第二RF信号。 通过用第二RF信号调制第一RF信号来形成幅度调制信号。 使用幅度调制信号在等离子体处理室内产生等离子体。 还公开了使用调频信号产生等离子体。

公开(公告)号：US20040226512A1

公开(公告)日：2004-11-18

申请号：US10768607

申请日：2004-01-30

申请人： Applied Materials, Inc.

发明人： Canfeng Lai ,  Michael S. Cox ,  Peter K. Loewenhardt ,  Tsutomu Tanaka ,  Shamouil Shamouilian

IPC分类号： C23C016/00

CPC分类号： H01J37/32431

摘要： A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.

公开(公告)号：US20020157793A1

公开(公告)日：2002-10-31

申请号：US10170827

申请日：2002-06-12

申请人： Applied Materials, Inc.

发明人： Michael S. Cox ,  Canfeng Lai ,  Robert B. Majewski ,  David P. Wanamaker ,  Christopher T. Lane ,  Peter Loewenhardt ,  Shamouil Shamouilian ,  John P. Parks

IPC分类号： C23F001/00 ,  C23C016/00

CPC分类号： H01J37/32009 ,  H01J37/321

摘要： A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.

公开(公告)号：US20020066664A1

公开(公告)日：2002-06-06

申请号：US10039808

申请日：2001-10-26

申请人： Applied Materials, Inc.

发明人： Shamouil Shamouilian ,  Anada H. Kumar ,  Donald J. Olgado ,  Joseph J. Stevens ,  Ricardo Leon ,  Jon Clinton

IPC分类号： B23H003/02

CPC分类号： H01L21/2885 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12

摘要： The present invention relates to a device that supplies electricity to a substrate. In one embodiment, the device includes multiple contacts, a current sensor, and a current regulator. The current sensor is attached to each of the plurality of contacts to sense their electric current. A current regulator controls current applied to each of the multiple contacts in response to the current sensor. In another embodiment, a compliant ridge is formed about the periphery of each contact to seal the contact from undesired chemicals.

摘要翻译： 本发明涉及向基板供电的装置。 在一个实施例中，该装置包括多个触点，电流传感器和电流调节器。 电流传感器附接到多个触点中的每一个以感测其电流。 电流调节器响应于电流传感器控制施加到多个触点中的每一个的电流。 在另一个实施例中，围绕每个接触件的周边形成柔顺脊，以将接触件密封到不期望的化学物质上。

公开(公告)号：US20040226511A1

公开(公告)日：2004-11-18

申请号：US10768601

申请日：2004-01-30

申请人： Applied Materials, Inc.

发明人： Canfeng Lai ,  Michael S. Cox ,  Peter K. Loewenhardt ,  Tsutomu Tanaka ,  Shamouil Shamouilian

IPC分类号： C23C016/00

CPC分类号： H01J37/32431

摘要： A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.

公开(公告)号：US20030036272A1

公开(公告)日：2003-02-20

申请号：US10159794

申请日：2002-05-30

申请人： APPLIED MATERIALS, INC.

发明人： Shamouil Shamouilian ,  Canfeng Lai ,  Michael Santiago Cox ,  Padmanabhan Krishnaraj ,  Tsutomu Tanaka ,  Sebastien Raoux ,  Peter I. Porshnev ,  Thomas Nowak

IPC分类号： H01L021/302

CPC分类号： B08B7/0035 ,  B08B7/00 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45593 ,  H01J37/3244 ,  H01J37/32844 ,  H01J2237/335 ,  Y02C20/30

摘要： A method of cleaning a semiconductor fabrication processing chamber involves recirculation of cleaning gas components. Consequently, input cleaning gas is utilized efficiently, and undesirable emissions are reduced. The method includes flowing a cleaning gas to an inlet of a processing chamber, and exposing surfaces of the processing chamber to the cleaning gas to clean the surfaces, thereby producing a reaction product. The method further includes removing an outlet gas including the reaction product from an outlet of the processing chamber, separating at least a portion of the reaction product from the outlet gas, and recirculating a portion of the outlet gas to the inlet of the processing chamber.

摘要翻译： 清洁半导体制造处理室的方法包括清洁气体组分的再循环。 因此，有效地利用输入清洁气体，并且减少不期望的排放。 该方法包括使清洁气体流到处理室的入口，并将处理室的表面暴露于清洁气体以清洁表面，从而产生反应产物。 该方法还包括从处理室的出口除去包括反应产物的出口气体，将至少一部分反应产物与出口气体分离，并将出口气体的一部分再循环到处理室的入口。

公开(公告)号：US20020182131A1

公开(公告)日：2002-12-05

申请号：US09872254

申请日：2001-06-01

申请人： APPLIED MATERIALS, INC.

发明人： Tony S. Kaushal ,  Shamouil Shamouilian ,  Harshad Borgaonkar ,  Kwok Manus Wong ,  Michael G. Chafin ,  Ashish Bhatnagar

IPC分类号： F28D021/00 ,  B01J035/00 ,  B01J008/02

CPC分类号： H01J37/32844 ,  B01D53/8662 ,  B01D53/885 ,  B01J19/12 ,  B01J19/129 ,  B01J2219/0809 ,  B01J2219/083 ,  B01J2219/0835 ,  B01J2219/0871 ,  B01J2219/0875 ,  B01J2219/0892 ,  C23C16/4412 ,  H01J37/3244 ,  Y02C20/30

摘要： A substrate processing apparatus has a process chamber with a substrate support, a gas supply to introduce a gas into the chamber, and a gas energizer to energize the gas in the processing of a substrate, thereby generating an effluent gas. A catalytic reactor has an effluent gas inlet to receive the effluent gas and an effluent gas outlet to exhaust treated effluent gas. A heater is adapted to heat the effluent gas in the catalytic reactor. The heated catalytic treatment of the effluent gas abates the hazardous gases in the effluent. An additive gas source and a prescrubber may also be used to further treat the effluent.

摘要翻译： 基板处理装置具有具有基板支撑件的处理室，向室内引入气体的气体供给部，以及在基板的加工中使气体通电的气体增压器，从而产生流出气体。 催化反应器具有用于接收废气的废气入口和用于排出经处理的废气的废气出口。 加热器适于加热催化反应器中的废气。 流出气体的加热催化处理减少流出物中的有害气体。 还可以使用添加气体源和预饱和物来进一步处理流出物。