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    Chemical mechanical polishing endpoinat detection
    2.
    发明申请
    Chemical mechanical polishing endpoinat detection 有权
    化学机械抛光endpoinat检测

    公开(公告)号：US20030087586A1

    公开(公告)日：2003-05-08

    申请号：US10005658

    申请日：2001-11-07

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Tony S. Kaushal ,  Chuong Quang Dam ,  Yongqi Hu

    IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00

    CPC classification number: B24B37/013 ,  B24B49/10

    Abstract: Endpoint of a chemical mechanical polishing process is detected by monitoring acoustical emissions produced by contact between a polishing pad and a wafer. The acoustic information is resolved into a frequency spectrum utilizing techniques such as fast Fourier transformation. Characteristic changes in frequency spectra of the acoustic emissions reveal transition in polishing between different material layers. CMP endpoint indicated by a change in the acoustic frequency spectrum is validated by correlation with other sensed properties, including but not limited to time-based changes in amplitude of acoustic emissions, frictional coefficient, capacitance, and/or resistance. CMP endpoint revealed by a change in acoustic frequency spectrum can also be validated by comparison with characteristic frequency spectra obtained at endpoints or polishing transitions of prior operational runs.

    Abstract translation: 通过监测由抛光垫和晶片之间的接触产生的声发射来检测化学机械抛光工艺的端点。 利用诸如快速傅里叶变换的技术将声信息解析成频谱。 声发射频谱的特征变化显示不同材料层之间的抛光过渡。 由声频谱变化指示的CMP端点通过与其他感测特性的相关性来验证，包括但不限于声发射幅度，摩擦系数，电容和/或电阻的基于时间的变化。 通过声频频谱变化揭示的CMP终点也可以通过与在先前操作运行的端点或抛光转换处获得的特征频谱进行比较来验证。

    Hydrogen bubble reduction on the cathode using double-cell designs
    4.
    发明申请
    Hydrogen bubble reduction on the cathode using double-cell designs 失效
    使用双电池设计在阴极上进行氢气还原

    公开(公告)号：US20030216045A1

    公开(公告)日：2003-11-20

    申请号：US10455861

    申请日：2003-06-06

    Applicant: Applied Materials, Inc.

    Inventor： Yan Wang ,  Feng Q. Liu ,  Alain Duboust ,  Siew S. Neo ,  Liang-Yuh Chen ,  Yongqi Hu

    IPC: H01L021/302 ,  H01L021/461

    CPC classification number: B23H3/08 ,  B23H5/08 ,  B24B37/0056 ,  B24B37/044 ,  B24B37/046 ,  C09G1/04 ,  C25F3/02 ,  H01L21/32125 ,  H01L21/32134

    Abstract: An apparatus and method for planarizing a surface of a substrate using a chamber separated into two parts by a membrane, and two separate electrolytes is provided. The embodiments of the present invention generally provide an electrochemical mechanical polishing system that reduces the number of defects found on the substrate surface after polishing. An exemplary electrochemical apparatus includes a physical barrier that prevents any trapped gas or gas generated during processing from residing in areas that can cause defects on the substrate. The process can be aided by the addition of various chemical components to the electrolyte that tend to reduce the gas generation at the cathode surface during the ECMP anodic dissolution process.

    Abstract translation: 使用通过膜分离成两部分的室来平坦化基板的表面的装置和方法，以及两个单独的电解质。 本发明的实施方案通常提供一种电化学机械抛光系统，其减少抛光后在基底表面上发现的缺陷数量。 示例性电化学装置包括物理屏障，其防止在处理期间产生的任何捕获的气体或气体驻留在可能导致基板上的缺陷的区域中。 该方法可以通过在电解质中添加各种化学成分来辅助，该电解质在ECMP阳极溶解过程期间倾向于减少阴极表面的气体产生。

    Method and apparatus for polishing metal and dielectric substrates
    5.
    发明申请
    Method and apparatus for polishing metal and dielectric substrates 失效
    抛光金属和电介质基板的方法和装置

    公开(公告)号：US20030029841A1

    公开(公告)日：2003-02-13

    申请号：US10025144

    申请日：2001-12-18

    Applicant: Applied Materials, Inc.

    Inventor： Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony S. Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred C. Redeker

    IPC: C23F001/00 ,  H01L021/461

    CPC classification number: H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

    Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

    Abstract translation: 提供了用于抛光衬底的方法和装置，其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。 在一个方面，提供了一种用于处理衬底的方法，包括将具有形成在其上的导电材料的衬底定位在具有一个或多个旋转载体头和一个或多个可旋转压板的抛光装置中，其中所述载体头包括保持环和 用于固定基板的薄膜和压板具有设置在其上的抛光制品，其以约0.4psi或更大于膜压力的保持环接触压力将基板表面和抛光制品彼此接触，并抛光基板以去除导电 材料。

    Method and composition for polishing a substrate
    6.
    发明申请
    Method and composition for polishing a substrate 失效
    抛光基材的方法和组合物

    公开(公告)号：US20040053499A1

    公开(公告)日：2004-03-18

    申请号：US10608404

    申请日：2003-06-26

    Applicant: Applied Materials, Inc.

    Inventor： Feng Q. Liu ,  Liang-Yuh Chen ,  Stan D. Tsai ,  Alain Duboust ,  Siew S. Neo ,  Yongqi Hu ,  Yan Wang ,  Paul D. Butterfield

    IPC: H01L021/302 ,  H01L021/461

    CPC classification number: B23H3/08 ,  B23H5/08 ,  B24B37/0056 ,  B24B37/044 ,  B24B37/046 ,  C09G1/04 ,  C25F3/02 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/32134 ,  H01L21/7684

    Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at a higher removal rate than conductive material disposed over wide feature definitions formed in a substrate by an electrochemical mechanical polishing technique. The electrochemical mechanical polishing technique may include a polishing composition comprising an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic or organic acid salts, one or more pH adjusting agents to provide a pH between about 2 and about 10, and a solvent.

    Abstract translation: 提供了抛光组合物和从衬底表面去除导电材料的方法。 在一个方面，提供了一种处理衬底以除去布置在形成于衬底中的窄特征定义之上的导电材料的方法，该导电材料以比通过电化学机械抛光技术在衬底中形成的宽特征定义上布置的导电材料更高的去除速率。 电化学机械抛光技术可以包括抛光组合物，其包含酸性电解质体系，一种或多种螯合剂，一种或多种腐蚀抑制剂，一种或多种无机或有机酸盐，一种或多种pH调节剂，以提供约 2和约10，和溶剂。

    Method and composition for polishing a substrate
    8.
    发明申请
    Method and composition for polishing a substrate 有权
    抛光基材的方法和组合物

    公开(公告)号：US20030234184A1

    公开(公告)日：2003-12-25

    申请号：US10456220

    申请日：2003-06-06

    Applicant: Applied Materials, Inc.

    Inventor： Feng Q. Liu ,  Stan D. Tsai ,  Yongqi Hu ,  Siew S. Neo ,  Yan Wang ,  Alain Duboust ,  Liang-Yuh Chen

    IPC: B23H009/00 ,  B23H007/00

    CPC classification number: H01L21/32125 ,  B23H3/08 ,  B23H5/08 ,  B24B37/0056 ,  B24B37/044 ,  B24B37/046 ,  C09G1/02 ,  C09G1/04 ,  C25F3/02 ,  H01L21/32134

    Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition includes an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic or organic acid salts, one or more pH adjusting agents to provide a pH between about 2 and about 10, a polishing enhancing material selected from the group of abrasive particles, one or more oxidizers, and combinations thereof, and a solvent. The composition may be used in an conductive material removal process including disposing a substrate having a conductive material layer formed thereon in a process apparatus comprising an electrode, providing the composition between the electrode and substrate, applying a bias between the electrode and the substrate, and removing conductive material from the conductive material layer. The ECMP polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface, such as copper, with a reduction in planarization type defects and yielding a desirable surface finish.

    Abstract translation: 提供了抛光组合物和从衬底表面去除导电材料的方法。 一方面，组合物包括酸性电解质体系，一种或多种螯合剂，一种或多种腐蚀抑制剂，一种或多种无机或有机酸盐，一种或多种pH调节剂，以提供约2至约10 ，选自磨料颗粒，一种或多种氧化剂及其组合的研磨增强材料和溶剂。 该组合物可用于导电材料去除工艺中，包括在包括电极的处理设备中设置其上形成有导电材料层的衬底，在电极和衬底之间提供组合物，在电极和衬底之间施加偏压，以及 从导电材料层去除导电材料。 本文所述的ECMP抛光组合物和方法提高了材料从衬底表面（例如铜）的有效去除速率，同时平坦化型缺陷减少并产生理想的表面光洁度。

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