公开(公告)号：US20150303651A1

公开(公告)日：2015-10-22

申请号：US14653525

申请日：2014-10-17

Applicant: BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Inventor： Idan Mandelbaum ,  Konstantinos Papadopoulos

IPC: H01S5/0625 ,  H01S5/125 ,  H01S3/106 ,  H01S5/34

CPC classification number: H01S3/094076 ,  H01S3/094092 ,  H01S3/1062 ,  H01S5/021 ,  H01S5/0608 ,  H01S5/0609 ,  H01S5/06256 ,  H01S5/12 ,  H01S5/125 ,  H01S5/34

Abstract: A laser system includes first and second mirrors, a semiconductor laser and a high frequency pulse generator. The semiconductor laser generates optical power within an optical cavity and reflects the optical power between the first mirror and second mirrors. The optical power has a frequency of foriginal-laser. The high frequency pulse generator generates a high frequency pulse with a rise time greater than an optical cycle of the optical power within the optical cavity and directly impinges the high frequency pulse on the optical power within the optical cavity. Impinging the high frequency pulse on the optical power within the optical cavity causes a frequency shift of the optical power to generate a final laser frequency that is greater than foriginal-laser, as well as beyond a frequency band of the second mirror to cause a final laser to be emitted past the second mirror and from the semiconductor laser.

Abstract translation: 激光系统包括第一和第二反射镜，半导体激光器和高频脉冲发生器。 半导体激光器在光腔内产生光功率并且反射第一反射镜和第二反射镜之间的光焦度。 光功率具有原始激光的频率。 高频脉冲发生器产生高频脉冲，其上升时间大于光腔内光功率的光周期，并直接将高频脉冲冲击在光腔内的光功率上。 使高频脉冲对光腔内的光功率产生影响，导致光功率的频移，产生大于原始激光器的最终激光频率，以及超出第二反射镜的频带以产生最终的激光频率 激光经过第二反射镜和半导体激光器发射。

公开(公告)号：US20140042376A1

公开(公告)日：2014-02-13

申请号：US13959130

申请日：2013-08-05

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Idan Mandelbaum ,  Tadd C. Kippeny

IPC: G02F1/00

CPC classification number: H01B1/02 ,  B22F1/0018 ,  B22F1/0059 ,  B22F1/0096 ,  B22F1/02 ,  B22F2998/00 ,  B22F2999/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G02F1/0018 ,  H01L29/0665 ,  Y10S977/774 ,  Y10S977/882 ,  Y10S977/948 ,  B22F2301/052 ,  B22F2301/255 ,  B22F2301/10 ,  B22F2301/20 ,  B22F2302/256

Abstract: A nanostructure and method for assembly thereof are disclosed. The nanostructure includes a gain medium nanoparticle; an output coupler nanoparticle being discrete from and linked to the gain medium nanoparticle; and a plurality of metal nanoparticles being linked about the gain medium nanoparticle, wherein the gain medium nanoparticle and the output coupler nanoparticle are included in the nanostructure in a one to one ratio.

Abstract translation: 公开了纳米结构及其组装方法。 纳米结构包括增益介质纳米颗粒; 输出耦合器纳米颗粒从增益介质纳米颗粒离散并连接到增益介质纳米颗粒上; 并且多个金属纳米颗粒围绕增益介质纳米颗粒连接，其中增益介质纳米颗粒和输出成色剂纳米颗粒以一比一的比例包含在纳米结构中。

公开(公告)号：US11127868B2

公开(公告)日：2021-09-21

申请号：US15799138

申请日：2017-10-31

Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.

Inventor： Pierre-Alain S. Auroux ,  Louise C. Sengupta ,  John E. King ,  Idan Mandelbaum ,  James A. Stobie ,  Laura A. Swafford ,  Chen J. Zhang ,  Christopher S. Badorrek ,  Michael J. Bowers, II ,  Myeongseob Kim ,  Tadd C. Kippeny ,  Don A. Harris

IPC: H01L31/0352 ,  H01L27/30 ,  H01L27/146 ,  B82Y20/00

Abstract: A photon-activated quantum dot capacitor and method of fabrication. A photon-activated quantum dot capacitor photodetector having a read only integrated circuit; and a photon-activated quantum dot capacitor chip hybridized with the read only integrated circuit, wherein said photon-activated quantum dot capacitor chip comprises colloidal quantum dots that detect photons as a change in a dielectric constant of the colloidal quantum dots of the photon-activated quantum dot capacitor chip, including the further implementation of a photodetector.

公开(公告)号：US09601895B2

公开(公告)日：2017-03-21

申请号：US14653525

申请日：2014-10-17

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Idan Mandelbaum ,  Konstantinos Papadopoulos

IPC: H01S3/10 ,  H01S3/094 ,  H01S5/06 ,  H01S3/106 ,  H01S5/0625 ,  H01S5/125 ,  H01S5/34 ,  H01S5/02 ,  H01S5/12

CPC classification number: H01S3/094076 ,  H01S3/094092 ,  H01S3/1062 ,  H01S5/021 ,  H01S5/0608 ,  H01S5/0609 ,  H01S5/06256 ,  H01S5/12 ,  H01S5/125 ,  H01S5/34

Abstract: A laser system includes first and second mirrors, a semiconductor laser and a high frequency pulse generator. The semiconductor laser generates optical power within an optical cavity and reflects the optical power between the first mirror and second mirrors. The optical power has a frequency of foriginal-laser. The high frequency pulse generator generates a high frequency pulse with a rise time greater than an optical cycle of the optical power within the optical cavity and directly impinges the high frequency pulse on the optical power within the optical cavity. Impinging the high frequency pulse on the optical power within the optical cavity causes a frequency shift of the optical power to generate a final laser frequency that is greater than foriginal-laser as well as beyond a frequency band of the second mirror to cause a final laser to be emitted past the second mirror and from the semiconductor laser.

公开(公告)号：US20160155527A1

公开(公告)日：2016-06-02

申请号：US15016711

申请日：2016-02-05

Applicant: BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Inventor： Idan Mandelbaum ,  Tadd C. Kippeny

IPC: H01B1/02 ,  G02F1/00

CPC classification number: H01B1/02 ,  B22F1/0018 ,  B22F1/0059 ,  B22F1/0096 ,  B22F1/02 ,  B22F2998/00 ,  B22F2999/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G02F1/0018 ,  H01L29/0665 ,  Y10S977/774 ,  Y10S977/882 ,  Y10S977/948 ,  B22F2301/052 ,  B22F2301/255 ,  B22F2301/10 ,  B22F2301/20 ,  B22F2302/256

Abstract: A nanostructure and method for assembly thereof are disclosed. The nanostructure includes a gain medium nanoparticle; an output coupler nanoparticle being discrete from and linked to the gain medium nanoparticle; and a plurality of metal nanoparticles being linked about the gain medium nanoparticle, wherein the gain medium nanoparticle and the output coupler nanoparticle are included in the nanostructure in a one to one ratio.

Abstract translation: 公开了纳米结构及其组装方法。 纳米结构包括增益介质纳米颗粒; 输出耦合器纳米颗粒从增益介质纳米颗粒离散并连接到增益介质纳米颗粒上; 并且多个金属纳米颗粒围绕增益介质纳米颗粒连接，其中增益介质纳米颗粒和输出成色剂纳米颗粒以一比一的比例包含在纳米结构中。

公开(公告)号：US09285610B2

公开(公告)日：2016-03-15

申请号：US13959130

申请日：2013-08-05

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Idan Mandelbaum ,  Tadd C. Kippeny

IPC: H01B1/02 ,  B82Y30/00 ,  G02F1/00 ,  B22F1/00 ,  B22F1/02 ,  H01L29/06 ,  B82Y40/00 ,  B82Y10/00

CPC classification number: H01B1/02 ,  B22F1/0018 ,  B22F1/0059 ,  B22F1/0096 ,  B22F1/02 ,  B22F2998/00 ,  B22F2999/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G02F1/0018 ,  H01L29/0665 ,  Y10S977/774 ,  Y10S977/882 ,  Y10S977/948 ,  B22F2301/052 ,  B22F2301/255 ,  B22F2301/10 ,  B22F2301/20 ,  B22F2302/256

Abstract: A nanostructure and method for assembly thereof are disclosed. The nanostructure includes a gain medium nanoparticle; an output coupler nanoparticle being discrete from and linked to the gain medium nanoparticle; and a plurality of metal nanoparticles being linked about the gain medium nanoparticle, wherein the gain medium nanoparticle and the output coupler nanoparticle are included in the nanostructure in a one to one ratio.

Abstract translation: 公开了纳米结构及其组装方法。 纳米结构包括增益介质纳米颗粒; 输出耦合器纳米颗粒从增益介质纳米颗粒离散并连接到增益介质纳米颗粒上; 并且多个金属纳米颗粒围绕增益介质纳米颗粒连接，其中增益介质纳米颗粒和输出成色剂纳米颗粒以一比一的比例包含在纳米结构中。

公开(公告)号：US09212200B2

公开(公告)日：2015-12-15

申请号：US13986178

申请日：2013-04-08

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Idan Mandelbaum ,  Tadd C. Kippeny

IPC: C07F19/00 ,  B82Y20/00

CPC classification number: C07F19/00 ,  B82Y20/00

Abstract: A nanostructure and method for assembly thereof are disclosed. An exemplary nanostructure includes a photocatalytic nanoparticle; a first tier of metal nanoparticles, each metal nanoparticle of the first tier being linked about the photocatalytic nanoparticle; and a second tier of metal nanoparticles, each metal nanoparticle of the second tier being linked to one of the metal nanoparticles of the first tier and located a distance from the photocatalytic nanoparticle greater than a distance between a metal nanoparticle of the first tier and the photocatalytic nanoparticle.

Abstract translation: 公开了纳米结构及其组装方法。 示例性纳米结构包括光催化纳米颗粒; 第一层金属纳米颗粒，第一层的每个金属纳米颗粒围绕光催化纳米颗粒连接; 和第二层金属纳米颗粒，第二层的每个金属纳米颗粒连接到第一层的金属纳米颗粒之一，并且距离光催化纳米颗粒一定距离大于第一层金属纳米颗粒与光催化剂之间的距离 纳米颗粒。

公开(公告)号：US20140135516A1

公开(公告)日：2014-05-15

申请号：US13986178

申请日：2013-04-08

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Idan Mandelbaum ,  Tadd C. Kippeny

IPC: C07F19/00

CPC classification number: C07F19/00 ,  B82Y20/00

Abstract: A nanostructure and method for assembly thereof are disclosed. An exemplary nanostructure includes a photocatalytic nanoparticle; a first tier of metal nanoparticles, each metal nanoparticle of the first tier being linked about the photocatalytic nanoparticle; and a second tier of metal nanoparticles, each metal nanoparticle of the second tier being linked to one of the metal nanoparticles of the first tier and located a distance from the photocatalytic nanoparticle greater than a distance between a metal nanoparticle of the first tier and the photocatalytic nanoparticle.

Abstract translation: 公开了纳米结构及其组装方法。 示例性纳米结构包括光催化纳米颗粒; 第一层金属纳米颗粒，第一层的每个金属纳米颗粒围绕光催化纳米颗粒连接; 和第二层金属纳米颗粒，第二层的每个金属纳米颗粒连接到第一层的金属纳米颗粒之一，并且距离光催化纳米颗粒一定距离大于第一层金属纳米颗粒与光催化剂之间的距离 纳米颗粒。