公开(公告)号：US20190144998A1

公开(公告)日：2019-05-16

申请号：US15779570

申请日：2016-11-29

Applicant: BASF SE

Inventor： Falko ABELS ,  David Dominique SCHWEINFURTH ,  Karl MATOS ,  Daniel LOEFFLER ,  Maraike AHLF ,  Florian BLASBERG ,  Thomas SCHAUB ,  Jan SPIELMANN ,  Axel KIRSTE ,  Boris GASPAR

IPC: C23C16/455 ,  C07F9/50 ,  C07F9/6584 ,  C23C16/06

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.