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公开(公告)号：US10454037B2
公开(公告)日：2019-10-22
申请号：US15504851
申请日：2015-08-17
Applicant: BASF SE
Inventor： Ilja Vladimirov , Jochen Brill , Dieter Freyberg , Thomas Weitz , Thomas Musiol , Silke Annika Koehler
Abstract: Disclosed are a novel semiconductor composition comprising at least one organic semiconductor in a liquid medium and the use thereof the production of organic semiconductor devices, in particular organic field effect transistors, organic solar cells, light-emitting diodes and sensors.
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公开(公告)号：US09716237B2
公开(公告)日：2017-07-25
申请号：US15120981
申请日：2015-02-18
Applicant: BASF SE
Inventor： Chongjun Jiao , Iori Doi , Thomas Weitz , Chao Wu , Wyman Zhao , Szehui Chua , Stefan Becker , Michael Eustachi
IPC: C07D495/14 , H01L51/00 , H01L51/05
CPC classification number: H01L51/0074 , C07D495/14 , H01L51/0541 , H01L51/0558
Abstract: The present invention provides compounds of formula 1 wherein X1 and X2 are independently from each other O, S or Se, and an electronic device comprising the compounds as semiconducting material.
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公开(公告)号：US20160207776A1
公开(公告)日：2016-07-21
申请号：US14914558
申请日：2014-08-25
Applicant: BASF SE
Inventor： Tobias Hintermann , Matthias Georg Schwab , Kitty Chih-Pei Cha , Thomas Weitz , Ansgar Schäfer , Imke Britta Müller
CPC classification number: H01L29/78 , C01B32/196 , C01B2204/06 , H01L29/0669 , H01L29/0673 , H01L29/1606 , H01L29/66037 , H01L29/66045 , H01L29/7781
Abstract: In a process for purifying graphene nanoribbons, a composition comprising graphene nanoribbons GNR1 and at least one contaminant is brought into contact with a liquid medium that includes a dispersant. The graphene nanoribbons GNR1 are dispersed in the liquid medium so as to obtain a liquid dispersion of the graphene nanoribbons GNR1. The liquid dispersion of the graphene nanoribbons GNR1 is subjected to a separation treatment so as to at least partly remove the at least one contaminant, thereby obtaining a liquid dispersion of purified graphene nanoribbons GNR1.
Abstract translation: 在用于纯化石墨烯纳米带的方法中，包含石墨烯纳米带GNR1和至少一种污染物的组合物与包括分散剂的液体介质接触。 将石墨烯纳米带GNR1分散在液体介质中，以获得石墨烯纳米带GNR1的液体分散体。 将石墨烯纳米带GNR1的液体分散体进行分离处理，以至少部分除去至少一种污染物，从而获得纯化的石墨烯纳米带GNR1的液体分散体。
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公开(公告)号：US09231215B2
公开(公告)日：2016-01-05
申请号：US14399756
申请日：2013-04-29
Applicant: BASF SE
Inventor： Florian Doetz , Thomas Weitz , Jiao Chongjun , Hiroyoshi Noguchi , Ang Sweemeng , Mi Zhou , Doi Iori , Ashok Kumar Mishra
IPC: H01L51/00 , C07D333/52 , C07D333/72 , C07D209/86 , C07D307/78 , C07D307/87 , C07D495/04 , H01L51/42 , H01L51/50 , H01L51/05
CPC classification number: H01L51/0074 , C07D209/86 , C07D307/78 , C07D307/87 , C07D333/52 , C07D333/72 , C07D495/04 , H01L51/0508 , H01L51/0545 , H01L51/0558 , H01L51/42 , H01L51/5012 , Y02E10/549
Abstract: Phenacene compounds of formula (I) are disclosed. All the variables in the formula are the same as defined in the description. A thin film semiconductor comprising the above compounds, and a field effect transistor device, a photovoltaic device, an organic light emitting diode device and a unipolar or complementary circuit device comprising the thin film are also disclosed.
Abstract translation: 公开了式（I）的苯并苯化合物。 公式中的所有变量与说明书中定义的相同。 还公开了包含上述化合物的薄膜半导体，以及场效应晶体管器件，光电器件，有机发光二极管器件和包括该薄膜的单极或互补电路器件。
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公开(公告)号：US20140299871A1
公开(公告)日：2014-10-09
申请号：US14361129
申请日：2012-12-03
Applicant: BASF SE
Inventor： Patrice Bujard , Natalia Chebotareva , Thomas Weitz , Pascal Hayoz
CPC classification number: H01L51/0003 , C08G61/124 , C08G61/126 , C08G2261/1412 , C08G2261/226 , C08G2261/228 , C08G2261/3223 , C08G2261/344 , C08G2261/364 , C08G2261/411 , C08G2261/91 , C08G2261/92 , C08G2261/95 , C08L65/00 , C08L2205/02 , C09B57/004 , C09B69/105 , C09B69/109 , H01L51/002 , H01L51/0035 , H01L51/0036 , H01L51/0043 , H01L51/005 , H01L51/0053 , H01L51/0068 , H01L51/0072 , H01L51/0512 , H01L51/0545 , H01L51/0558
Abstract: The present invention provides an electronic component or device comprising a gate electrode, a source electrode and a drain electrode, wherein said component or device further comprising an organic semiconducting (OSC) material that is provided between the source and drain electrode, wherein the OSC material comprises (a) a polymer represented by formula: (I), and (b) a compound of formula (II). High quality OFETs can be fabricated by the choice of a semiconductor material, which is comprised of a polymer represented by formula I and (b) a compound of formula II.
Abstract translation: 本发明提供了一种包括栅电极，源电极和漏电极的电子部件或器件，其中所述组件或器件还包括设置在源电极和漏电极之间的有机半导体（OSC）材料，其中OSC材料 包括（a）由式（I）表示的聚合物和（b）式（II）的化合物。 可以通过选择由式I和（b）式II化合物表示的聚合物组成的半导体材料来制造高质量OFET。
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Patent Agency Ranking
公开(公告)号：US09978943B2
公开(公告)日：2018-05-22
申请号：US14361129
申请日：2012-12-03
Applicant: BASF SE
Inventor： Patrice Bujard , Natalia Chebotareva , Thomas Weitz , Pascal Hayoz
CPC classification number: H01L51/0003 , C08G61/124 , C08G61/126 , C08G2261/1412 , C08G2261/226 , C08G2261/228 , C08G2261/3223 , C08G2261/344 , C08G2261/364 , C08G2261/411 , C08G2261/91 , C08G2261/92 , C08G2261/95 , C08L65/00 , C08L2205/02 , C09B57/004 , C09B69/105 , C09B69/109 , H01L51/002 , H01L51/0035 , H01L51/0036 , H01L51/0043 , H01L51/005 , H01L51/0053 , H01L51/0068 , H01L51/0072 , H01L51/0512 , H01L51/0545 , H01L51/0558
Abstract: The present invention provides an electronic component or device comprising a gate electrode, a source electrode and a drain electrode, wherein said component or device further comprising an organic semiconducting (OSC) material that is provided between the source and drain electrode, wherein the OSC material comprises (a) a polymer represented by formula: (I), and (b) a compound of formula (II). High quality OFETs can be fabricated by the choice of a semiconductor material, which is comprised of a polymer represented by formula I and (b) a compound of formula II.
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公开(公告)号：US10388881B2
公开(公告)日：2019-08-20
申请号：US15503242
申请日：2015-08-07
Inventor： Zhenan Bao , Ting Lei , Ying-Chih Lai , Huiliang Wang , Pascal Hayoz , Thomas Weitz
IPC: H01L51/00 , H01B1/04 , C08G61/12 , C01B32/172 , C01B32/174 , C08K3/04 , B82Y40/00 , H01L51/05
Abstract: Provided is a process for preparing a composition comprising semiconducting single-walled carbon nanotubes, a semiconducting polymer and solvent A (composition A), which process comprises the step of separating composition A from a composition comprising semiconducting and metallic single-walled carbon nanotubes, the semiconducting polymer and solvent B (composition B), wherein the semiconducting polymer has a band gap in the range of 0.5 to 1.8 eV and solvent A and B comprise an aromatic or a heteroaromatic solvent, composition A itself, a process for forming an electronic device, which process comprises the step of forming a layer by applying composition A to a precursor of the electronic device, as well as the electronic device obtainable by this process.
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公开(公告)号：US10333072B2
公开(公告)日：2019-06-25
申请号：US15506802
申请日：2015-08-20
Applicant: BASF SE
Inventor： Thomas Weitz , Thomas Gessner , Junichi Takeya , Masayuki Kishi
IPC: H01L51/00 , C07D471/00 , H01L51/05 , C07D471/06
Abstract: A thin film semiconductor comprising a compound of formula I or II wherein: R1 and R2, at each occurrence, independently are selected from a C1-30 alkyl group, a C2-30 alkenyl group, a C2-30 alkynyl group and a C1-30 haloalkyl group, R3, R4, R5, and R6 independently are H or an electron-withdrawing group, wherein at least one of R3, R4, R5, and R6 is an electron-withdrawing group; and a non-conductive polymer.
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公开(公告)号：US10224485B2
公开(公告)日：2019-03-05
申请号：US15504463
申请日：2015-08-17
Applicant: BASF SE
Inventor： Thomas Weitz , Ilja Vladimirov , Tiziana Chiodo , Thomas Seyfried
IPC: H01L51/00 , C07D471/06 , H01L51/05 , H01L51/42 , H01L51/50
Abstract: Provided are a process for preparing a crystalline organic semiconductor material wherein the conditions of crystallization lead to the formation of crystals at the gas liquid interface having advantageous semiconductor properties, the obtained crystalline organic semiconductor material and the use thereof for the production of organic semiconductor devices, in particular organic field effect transistors and organic solar cells.
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公开(公告)号：US10079346B2
公开(公告)日：2018-09-18
申请号：US15537522
申请日：2015-12-16
Applicant: BASF SE
Inventor： Hitoshi Yamato , Takuya Tsuda , Chao Wu , Thomas Weitz , Michael Eustachi , Maximilian Hemgesberg
IPC: C07D513/14 , H01L51/00 , H01L51/05
CPC classification number: H01L51/0071 , C07D513/14 , H01L51/0562
Abstract: The present invention provides compounds of formula (I) wherein X is O, S or NR10, wherein R10 is H, C1-30-alkyl, substituted C1-30-alkyl, C2-30-alkenyl, substituted C2-30-alkenyl, C2-30-alkynyl, substituted C2-30-alkynyl or C(0)-OR11, R1 and R11 are independently from each other selected from the group consisting of C1-30-alkyl, substituted C1-30-alkyl, C2-30-alkenyl, substituted C2-30-alkenyl, C2-30-alkynyl, substituted C2-30-alkynyl, C5-8-cycloalkyl, substituted C5-8-cycloalkyl, C5-8-cycloalkenyl, and substituted C5-8-cycloalkenyl, and an electronic device comprising the compounds as semiconducting material.
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