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    HIGH VOLTAGE MONOLITHIC LED CHIP
    2.
    发明申请
    HIGH VOLTAGE MONOLITHIC LED CHIP 有权

    公开(公告)号：US20210020805A1

    公开(公告)日：2021-01-21

    申请号：US17062119

    申请日：2020-10-02

    Applicant: Cree, Inc.

    Inventor： Kevin W. Haberern ,  Matthew Donofrio ,  Bennett Langsdorf ,  Thomas Place ,  Michael John Bergmann

    IPC: H01L33/08 ,  H01L33/40 ,  H01L25/075

    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

    High voltage monolithic LED chip
    3.
    发明授权
    High voltage monolithic LED chip 有权

    公开(公告)号：US10115860B2

    公开(公告)日：2018-10-30

    申请号：US15647823

    申请日：2017-07-12

    Applicant: Cree, Inc.

    Inventor： Kevin W. Haberern ,  Matthew Donofrio ,  Bennett Langsdorf ,  Thomas Place ,  Michael John Bergmann

    IPC: H01L31/0256 ,  H01L33/08 ,  H01L33/40 ,  H01L25/075 ,  H01L33/46

    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

    Graded vias for LED chip P- and N- contacts
    5.
    发明授权
    Graded vias for LED chip P- and N- contacts 有权
    分级通孔用于LED芯片P-和N-接触

    公开(公告)号：US09412907B1

    公开(公告)日：2016-08-09

    申请号：US14690284

    申请日：2015-04-17

    Applicant: CREE, INC.

    Inventor： Thomas Place ,  Bennett Dean Langsdorf

    IPC: H01L31/0256 ,  H01L33/38 ,  H01L33/08

    CPC classification number: H01L33/382 ,  H01L33/08 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: The present disclosure provides various embodiments of light emitting chips and packages with improved current spreading structures, such as non-uniform via structures or varied via structures. In some embodiments, these structures may be used to regulate current flow and current crowding in order to improve emitter efficiency and uniformity. Some embodiments of this disclosure may also refer to contact pad placement to improve current flow. In some embodiments of non-uniform via structures, the size of the vias may vary, whereas in other embodiments, the shape or spacing between the vias may vary.

    Abstract translation: 本公开提供了具有改进的电流扩散结构（例如不均匀的通孔结构或变化的通孔结构）的发光芯片和封装的各种实施例。 在一些实施例中，这些结构可用于调节电流和电流拥挤，以便提高发射极效率和均匀性。 本公开的一些实施例还可以指接触垫放置以改善电流。 在非均匀通孔结构的一些实施例中，通孔的尺寸可以变化，而在其它实施例中，通孔之间的形状或间隔可以变化。

    High voltage monolithic LED chip
    6.
    发明授权
    High voltage monolithic LED chip 有权

    公开(公告)号：US10797201B2

    公开(公告)日：2020-10-06

    申请号：US16173617

    申请日：2018-10-29

    Applicant: Cree, Inc.

    Inventor： Kevin W. Haberern ,  Matthew Donofrio ,  Bennett Langsdorf ,  Thomas Place ,  Michael John Bergmann

    IPC: H01L31/0256 ,  H01L33/08 ,  H01L33/40 ,  H01L25/075 ,  H01L33/46

    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

    MULTI-SEGMENT MONOLITHIC LED CHIP
    8.
    发明申请
    MULTI-SEGMENT MONOLITHIC LED CHIP 审中-公开
    多部分单片LED芯片

    公开(公告)号：US20150228876A1

    公开(公告)日：2015-08-13

    申请号：US14691314

    申请日：2015-04-20

    Applicant: CREE, INC.

    Inventor： Thomas Place ,  Kevin Ward Haberern

    IPC: H01L33/62 ,  H01L33/48 ,  H01L33/24 ,  H01L33/08 ,  H01L33/60

    Abstract: Described herein are LED chips comprising pluralities of active regions on the same submount. These active regions are individually addressable, such that beam output from the LEDs can be controlled simply by selectively activating the desired active region in the plurality without resorting to incorporation of advanced optics and reflectors comprising complex moving parts. In some embodiments, one or more active regions can surround one or more other active regions. In some embodiments, the various active regions are individually addressable by virtue of each active region comprising its own anode and sharing a common cathode. In some embodiments, the various active regions are individually addressable by virtue of each active region comprising its own cathode and sharing a common anode. In some embodiments, each active region comprises its own anode and its own cathode.

    Abstract translation: 这里描述的是包括在同一基座上的多个活性区域的LED芯片。 这些有源区域是可单独寻址的，使得可以简单地通过选择性地激活多个所需有源区域来控制来自LED的光束输出，而无需采用先进光学器件和包括复杂运动部件的反射器的并入。 在一些实施例中，一个或多个有源区域可以围绕一个或多个其它活性区域。 在一些实施例中，各种有源区域可通过包括其自身阳极的每个有源区域和共享公共阴极而单独寻址。 在一些实施例中，各种有源区域可通过包括其自己的阴极的每个有源区域共享共用阳极来单独寻址。 在一些实施例中，每个有源区域包括其自身的阳极及其自身的阴极。

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