HIGH VOLTAGE MONOLITHIC LED CHIP
    1.
    发明申请

    公开(公告)号:US20210020805A1

    公开(公告)日:2021-01-21

    申请号:US17062119

    申请日:2020-10-02

    Applicant: Cree, Inc.

    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

    Phosphor-converted light emitting device

    公开(公告)号:US10283681B2

    公开(公告)日:2019-05-07

    申请号:US14120297

    申请日:2014-05-14

    Applicant: Cree, Inc.

    Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.

    High voltage monolithic LED chip
    4.
    发明授权

    公开(公告)号:US10115860B2

    公开(公告)日:2018-10-30

    申请号:US15647823

    申请日:2017-07-12

    Applicant: Cree, Inc.

    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

    High voltage monolithic LED chip
    6.
    发明授权

    公开(公告)号:US10797201B2

    公开(公告)日:2020-10-06

    申请号:US16173617

    申请日:2018-10-29

    Applicant: Cree, Inc.

    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

    Phosphor-converted light emitting device
    8.
    发明申请
    Phosphor-converted light emitting device 审中-公开
    磷光转换发光器件

    公开(公告)号:US20150069430A1

    公开(公告)日:2015-03-12

    申请号:US14120297

    申请日:2014-05-14

    Applicant: Cree, Inc.

    CPC classification number: H01L33/50 H01L33/44

    Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.

    Abstract translation: 磷光体转换发光器件包括在衬底上的发光二极管(LED),其中LED包括一叠包括p-n结的外延层。 波长转换材料与LED光学通信。 根据荧光体转换发光器件的一个实施例,选择滤光器与波长转换材料相邻,并且选择滤光器包括多个纳米颗粒,用于吸收未被波长转换材料下转换的LED的光。 根据磷光体转换发光器件的另一实施例,衬底上LED的周边与衬底的边缘之间的垂直距离为至少约24微米。 根据荧光体转换发光器件的另一实施例,LED包括在其一个或多个侧壁上的镜层,用于减少通过侧壁的光泄漏。

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