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    High voltage monolithic LED chip
    2.
    发明授权
    High voltage monolithic LED chip 有权

    公开(公告)号：US10115860B2

    公开(公告)日：2018-10-30

    申请号：US15647823

    申请日：2017-07-12

    Applicant: Cree, Inc.

    Inventor： Kevin W. Haberern ,  Matthew Donofrio ,  Bennett Langsdorf ,  Thomas Place ,  Michael John Bergmann

    IPC: H01L31/0256 ,  H01L33/08 ,  H01L33/40 ,  H01L25/075 ,  H01L33/46

    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

    HIGH VOLTAGE MONOLITHIC LED CHIP
    4.
    发明申请
    HIGH VOLTAGE MONOLITHIC LED CHIP 有权

    公开(公告)号：US20210020805A1

    公开(公告)日：2021-01-21

    申请号：US17062119

    申请日：2020-10-02

    Applicant: Cree, Inc.

    Inventor： Kevin W. Haberern ,  Matthew Donofrio ,  Bennett Langsdorf ,  Thomas Place ,  Michael John Bergmann

    IPC: H01L33/08 ,  H01L33/40 ,  H01L25/075

    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

    Phosphor-converted light emitting device
    5.
    发明授权
    Phosphor-converted light emitting device 有权

    公开(公告)号：US10283681B2

    公开(公告)日：2019-05-07

    申请号：US14120297

    申请日：2014-05-14

    Applicant: Cree, Inc.

    Inventor： Brian T. Collins ,  Matthew Donofrio ,  Kevin W. Haberern ,  Bennett Langsdorf ,  Anoop Mathew ,  Harry A. Seibel ,  Iliya Todorov ,  Bradley E. Williams

    IPC: H01L33/00 ,  H01L33/50 ,  H01L33/44

    Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.

    High voltage monolithic LED chip
    7.
    发明授权
    High voltage monolithic LED chip 有权

    公开(公告)号：US10797201B2

    公开(公告)日：2020-10-06

    申请号：US16173617

    申请日：2018-10-29

    Applicant: Cree, Inc.

    Inventor： Kevin W. Haberern ,  Matthew Donofrio ,  Bennett Langsdorf ,  Thomas Place ,  Michael John Bergmann

    IPC: H01L31/0256 ,  H01L33/08 ,  H01L33/40 ,  H01L25/075 ,  H01L33/46

    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

    Phosphor-converted light emitting device
    9.
    发明申请
    Phosphor-converted light emitting device 审中-公开
    磷光转换发光器件

    公开(公告)号：US20150069430A1

    公开(公告)日：2015-03-12

    申请号：US14120297

    申请日：2014-05-14

    Applicant: Cree, Inc.

    Inventor： Brian T. Collins ,  Matthew Donofrio ,  Kevin W. Haberern ,  Bennett Langsdorf ,  Anoop Mathew ,  Harry A. Seibel ,  Iliya Todorov ,  Bradley E. Williams

    IPC: H01L33/50 ,  H01L27/15

    CPC classification number: H01L33/50 ,  H01L33/44

    Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.

    Abstract translation: 磷光体转换发光器件包括在衬底上的发光二极管（LED），其中LED包括一叠包括p-n结的外延层。 波长转换材料与LED光学通信。 根据荧光体转换发光器件的一个实施例，选择滤光器与波长转换材料相邻，并且选择滤光器包括多个纳米颗粒，用于吸收未被波长转换材料下转换的LED的光。 根据磷光体转换发光器件的另一实施例，衬底上LED的周边与衬底的边缘之间的垂直距离为至少约24微米。 根据荧光体转换发光器件的另一实施例，LED包括在其一个或多个侧壁上的镜层，用于减少通过侧壁的光泄漏。

    LED STRUCTURE WITH ENHANCED MIRROR REFLECTIVITY
    10.
    发明申请
    LED STRUCTURE WITH ENHANCED MIRROR REFLECTIVITY 审中-公开
    LED结构与增强反射率

    公开(公告)号：US20140167065A1

    公开(公告)日：2014-06-19

    申请号：US14185589

    申请日：2014-02-20

    Applicant: CREE, INC.

    Inventor： Michael Bergmann ,  Matthew Donofrio ,  Sten Heikman ,  Kevin S. Schneider ,  Kevin W. Haberern ,  John A. Edmond

    IPC: H01L33/60 ,  H01L33/32 ,  H01L33/08

    CPC classification number: H01L33/60 ,  H01L33/08 ,  H01L33/32 ,  H01L33/382 ,  H01L33/385 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2924/00014

    Abstract: Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror, such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region. In a further embodiment, the barrier layer is smaller than the mirror such that the periphery of the mirror is at least 40% free of the barrier layer, and the second contact is below the first contact and accessible from the bottom of the chip.

    Abstract translation: 本发明的实施例通常涉及通过减少与镜接触相邻的阻挡层的光吸收效果来改进总发射的LED芯片。 在一个实施例中，LED芯片包括一个或多个LED，其中每个LED具有有源区，在有源区下方的第一接触具有高反射镜，以及邻近反射镜的阻挡层。 阻挡层比镜子小，使得其不延伸超出反射镜的周边。 在另一个可能的实施例中，进一步提供绝缘体，其中绝缘体邻近阻挡层并且反射镜的相邻部分未被有源区域或阻挡层接触。 在另一个实施例中，在有源区上提供第二接触。 在另一个实施例中，阻挡层小于反射镜，使得反射镜的周边至少不含阻挡层40％，并且第二触点位于第一触点下方并且可从芯片的底部接近。

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