公开(公告)号：US08901649B2

公开(公告)日：2014-12-02

申请号：US13238858

申请日：2011-09-21

申请人： Chieh-Wei He ,  Shih-Yu Wang ,  Qi-An Xu

发明人： Chieh-Wei He ,  Shih-Yu Wang ,  Qi-An Xu

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L29/08

CPC分类号： H01L29/78 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/66659

摘要： A semiconductor device, an electrostatic discharge protection device and manufacturing method thereof are provided. The electrostatic discharge protection device includes a gate, a gate dielectric layer, an N-type source region, an N-type drain region, an N-type doped region and a P-type doped region. The gate dielectric layer is disposed on a substrate. The gate is disposed on the gate dielectric layer. The N-type source region and the N-type drain region are disposed in the substrate at two sides of the gate, respectively. The N-type doped region is disposed in the N-type drain region and connects to the top of the N-type drain region. The P-type doped region is disposed under the N-type drain region and connects to the bottom of the N-type drain region.

摘要翻译： 提供半导体器件，静电放电保护器件及其制造方法。 静电放电保护器件包括栅极，栅极电介质层，N型源极区，N型漏极区，N型掺杂区和P型掺杂区。 栅介质层设置在基板上。 栅极设置在栅极电介质层上。 N型源极区域和N型漏极区域分别设置在栅极两侧的基板中。 N型掺杂区域设置在N型漏极区域中并且连接到N型漏极区域的顶部。 P型掺杂区域设置在N型漏极区域下方并连接到N型漏极区域的底部。

公开(公告)号：US20130069125A1

公开(公告)日：2013-03-21

申请号：US13238858

申请日：2011-09-21

申请人： CHIEH-WEI HE ,  Shih-Yu Wang ,  Qi-An Xu

发明人： CHIEH-WEI HE ,  Shih-Yu Wang ,  Qi-An Xu

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/78 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/66659

摘要： A semiconductor device, an electrostatic discharge protection device and manufacturing method thereof are provided. The electrostatic discharge protection device includes a gate, a gate dielectric layer, an N-type source region, an N-type drain region, an N-type doped region and a P-type doped region. The gate dielectric layer is disposed on a substrate. The gate is disposed on the gate dielectric layer. The N-type source region and the N-type drain region are disposed in the substrate at two sides of the gate, respectively. The N-type doped region is disposed in the N-type drain region and connects to the top of the N-type drain region. The P-type doped region is disposed under the N-type drain region and connects to the bottom of the N-type drain region.

摘要翻译： 提供半导体器件，静电放电保护器件及其制造方法。 静电放电保护器件包括栅极，栅极电介质层，N型源极区，N型漏极区，N型掺杂区和P型掺杂区。 栅介质层设置在基板上。 栅极设置在栅极电介质层上。 N型源极区域和N型漏极区域分别设置在栅极两侧的基板中。 N型掺杂区域设置在N型漏极区域中并且连接到N型漏极区域的顶部。 P型掺杂区域设置在N型漏极区域下方并连接到N型漏极区域的底部。

公开(公告)号：US20130201584A1

公开(公告)日：2013-08-08

申请号：US13368745

申请日：2012-02-08

申请人： Chieh-Wei He ,  Shih-Yu Wang

发明人： Chieh-Wei He ,  Shih-Yu Wang

IPC分类号： H02H9/04

CPC分类号： H02H9/046 ,  H01L27/0248

摘要： An electrostatic discharge (ESD) protection device including a modified lateral silicon-controlled rectifier (MLSCR) and a voltage control circuit is provided. The MLSCR has a first terminal, a second terminal and a control terminal connected to a first P+-type doped region, where the first terminal and the second terminal are electrically connected to a first line and a second line, respectively. The voltage control circuit is electrically connected to the first line, the second line and the control terminal. When an electrostatic pulse is appeared on the first line, the voltage control circuit provides a current path from the first line to the control terminal. When an input signal is supplied to the first line, the voltage control circuit receives a power voltage, and stops providing the current path according to the power voltage.

摘要翻译： 提供了包括改进的横向硅控整流器（MLSCR）和电压控制电路的静电放电（ESD）保护装置。 MLSCR具有连接到第一P +型掺杂区的第一端子，第二端子和控制端子，其中第一端子和第二端子分别电连接到第一线路和第二线路。 电压控制电路与第一线路，第二线路和控制终端电连接。 当第一行出现静电脉冲时，电压控制电路提供从第一行到控制端的电流路径。 当输入信号被提供给第一行时，电压控制电路接收电源电压，并根据电源电压停止提供电流路径。

公开(公告)号：US09166401B2

公开(公告)日：2015-10-20

申请号：US13368745

申请日：2012-02-08

申请人： Chieh-Wei He ,  Shih-Yu Wang

发明人： Chieh-Wei He ,  Shih-Yu Wang

IPC分类号： H02H9/00 ,  H02H9/04 ,  H01L27/02

CPC分类号： H02H9/046 ,  H01L27/0248

摘要： An electrostatic discharge (ESD) protection device including a modified lateral silicon-controlled rectifier (MLSCR) and a voltage control circuit is provided. The MLSCR has a first terminal, a second terminal and a control terminal connected to a first P+-type doped region, where the first terminal and the second terminal are electrically connected to a first line and a second line, respectively. The voltage control circuit is electrically connected to the first line, the second line and the control terminal. When an electrostatic pulse is appeared on the first line, the voltage control circuit provides a current path from the first line to the control terminal. When an input signal is supplied to the first line, the voltage control circuit receives a power voltage, and stops providing the current path according to the power voltage.

摘要翻译： 提供了包括改进的横向硅控整流器（MLSCR）和电压控制电路的静电放电（ESD）保护装置。 MLSCR具有连接到第一P +型掺杂区的第一端子，第二端子和控制端子，其中第一端子和第二端子分别电连接到第一线路和第二线路。 电压控制电路与第一线路，第二线路和控制终端电连接。 当第一行出现静电脉冲时，电压控制电路提供从第一行到控制端的电流路径。 当输入信号被提供给第一行时，电压控制电路接收电源电压，并根据电源电压停止提供电流路径。

公开(公告)号：US20130155554A1

公开(公告)日：2013-06-20

申请号：US13328755

申请日：2011-12-16

申请人： Shih-Yu Wang ,  Chieh-Wei He ,  Yao-Wen Chang

发明人： Shih-Yu Wang ,  Chieh-Wei He ,  Yao-Wen Chang

IPC分类号： H02H9/04

CPC分类号： H02H9/046

摘要： An electrostatic discharge protection device is provided. The electrostatic discharge protection device includes a clamp unit and a control circuit. The clamp unit provides a discharging path from a first power line to a first ground line. The control circuit receives a first power voltage from the first power line and a second power voltage from a second power line. Wherein, when the first power voltage and the second power voltage are applied, the control circuit generates an isolation signal to disconnect the discharging path. When the first power voltage and the second power voltage are not applied, the control circuit generates a trigger signal according to an electrostatic signal from the first power line to turn on the discharging path.

摘要翻译： 提供一种静电放电保护装置。 静电放电保护装置包括钳位单元和控制电路。 夹持单元提供从第一电力线到第一接地线的放电路径。 控制电路从第一电力线接收第一电力电压和从第二电力线接收第二电力电压。 其中，当施加第一电源电压和第二电源电压时，控制电路产生隔离信号以断开放电路径。 当不施加第一电源电压和第二电源电压时，控制电路根据来自第一电力线的静电信号产生触发信号，以导通放电路径。

公开(公告)号：US08817436B2

公开(公告)日：2014-08-26

申请号：US13328755

申请日：2011-12-16

申请人： Shih-Yu Wang ,  Chieh-Wei He ,  Yao-Wen Chang

发明人： Shih-Yu Wang ,  Chieh-Wei He ,  Yao-Wen Chang

IPC分类号： H02H9/00

CPC分类号： H02H9/046

摘要： An electrostatic discharge protection device is provided. The electrostatic discharge protection device includes a clamp unit and a control circuit. The clamp unit provides a discharging path from a first power line to a first ground line. The control circuit receives a first power voltage from the first power line and a second power voltage from a second power line. Wherein, when the first power voltage and the second power voltage are applied, the control circuit generates an isolation signal to disconnect the discharging path. When the first power voltage and the second power voltage are not applied, the control circuit generates a trigger signal according to an electrostatic signal from the first power line to turn on the discharging path.

摘要翻译： 提供一种静电放电保护装置。 静电放电保护装置包括钳位单元和控制电路。 夹持单元提供从第一电力线到第一接地线的放电路径。 控制电路从第一电力线接收第一电力电压和从第二电力线接收第二电力电压。 其中，当施加第一电源电压和第二电源电压时，控制电路产生隔离信号以断开放电路径。 当不施加第一电源电压和第二电源电压时，控制电路根据来自第一电力线的静电信号产生触发信号，以导通放电路径。

公开(公告)号：US08253165B2

公开(公告)日：2012-08-28

申请号：US12410335

申请日：2009-03-24

申请人： Shih-Yu Wang ,  Chia-Ling Lu ,  Yan-Yu Chen ,  Yu-Lien Liu ,  Tao-Cheng Lu

发明人： Shih-Yu Wang ,  Chia-Ling Lu ,  Yan-Yu Chen ,  Yu-Lien Liu ,  Tao-Cheng Lu

IPC分类号： H01L29/74 ,  H01L23/62

CPC分类号： H01L29/7436 ,  H01L27/0251 ,  H01L27/0262 ,  H01L29/0692 ,  H01L29/78 ,  H01L29/7835 ,  H01L2924/0002 ,  H03K17/08 ,  H03K19/003 ,  H01L2924/00

摘要： A semiconductor device includes a first well region of a first conductivity, a second well region of a second conductivity type, a source region of the second conductivity type within the first well region, and a drain region of the second conductivity type at least partially within the second well region. A well contact to the first well region is coupled to the source. A third doped region of the first conductivity type and a fourth doped region of the second conductivity type are located in the second well region. A first transistor includes the third doped region, the second well region, and the first well region. The first transistor is coupled to a switch device. A second transistor includes the second well region, the first well region, and the source region. The first and the second transistors are configured to provide a current path during an ESD event.

摘要翻译： 半导体器件包括第一导电类型的第一阱区域，第二导电类型的第二阱区域，第一阱区域内的第二导电类型的源极区域和至少部分地在第二阱区域内的第二导电类型的漏极区域 第二个井区。 与第一阱区的良好接触耦合到源。 第一导电类型的第三掺杂区域和第二导电类型的第四掺杂区域位于第二阱区域中。 第一晶体管包括第三掺杂区域，第二阱区域和第一阱区域。 第一晶体管耦合到开关器件。 第二晶体管包括第二阱区，第一阱区和源极区。 第一和第二晶体管被配置为在ESD事件期间提供电流路径。

公开(公告)号：US20110102313A1

公开(公告)日：2011-05-05

申请号：US12753081

申请日：2010-04-01

申请人： Ming-Che Hsieh ,  Chih-Wei Chu ,  Shih-Yu Wang

发明人： Ming-Che Hsieh ,  Chih-Wei Chu ,  Shih-Yu Wang

IPC分类号： G09G3/34 ,  B05D5/06 ,  B05D3/06

CPC分类号： G09G3/344 ,  G02F1/167 ,  G02F2201/52 ,  G09G2300/0452 ,  G09G2340/06

摘要： An electrophoresis display panel includes a plurality of first sub-pixels, a plurality of second sub-pixels, a plurality of third sub-pixels, and a plurality of white sub-pixels. The first sub-pixels, the second sub-pixels, and the third sub-pixels are suitable for irradiating different light of three primary colors, respectively, while the white sub-pixels are suitable for irradiating white light. Each of the first sub-pixels does not adjoin the second sub-pixels and the third sub-pixels. Each of the second sub-pixels does not adjoin the third sub-pixels. Each of the first sub-pixels adjoins the white sub-pixels exclusively or adjoins the white sub-pixels and other first sub-pixels exclusively.

摘要翻译： 电泳显示面板包括多个第一子像素，多个第二子像素，多个第三子像素和多个白色子像素。 第一子像素，第二子像素和第三子像素分别适合于照射三原色的不同光，而白色子像素适合于照射白光。 每个第一子像素不与第二子像素和第三子像素相邻。 每个第二子像素不与第三子像素相邻。 每个第一子像素与白色子像素相邻，仅排列或毗邻白色子像素和其他第一子像素。

公开(公告)号：US07843517B2

公开(公告)日：2010-11-30

申请号：US12324899

申请日：2008-11-28

申请人： Ming-Che Hsieh ,  Shih-Yu Wang ,  Chih-Wei Chu

发明人： Ming-Che Hsieh ,  Shih-Yu Wang ,  Chih-Wei Chu

IPC分类号： G02F1/1335 ,  G02F1/00 ,  G02B5/20

CPC分类号： G02F1/13338 ,  G02F1/13439 ,  G02F2001/13396 ,  G02F2202/02

摘要： A touch panel including a first substrate, a second substrate, a sealant, a liquid crystal layer, a main spacer, a first sensing spacer, a second sensing spacer, a first opposite electrode and a second opposite electrode is provided. The first substrate has a central area and a peripheral area. The second substrate is disposed opposite to the first substrate. The first sensing spacer is disposed on the central area and between the first and the second substrates. The second sensing spacer is disposed on the peripheral area and between the first and the second substrates. There's a first sensing gap between the first sensing spacer and the first opposite electrode disposed corresponding to the first sensing spacer. There's a second sensing gap between the second sensing spacer and the second opposite electrode disposed corresponding to the second sensing spacer. The first sensing gap is larger than the second sensing gap.

摘要翻译： 提供了包括第一基板，第二基板，密封剂，液晶层，主间隔件，第一感测间隔件，第二感测间隔件，第一相对电极和第二相对电极的触摸面板。 第一基板具有中心区域和周边区域。 第二基板与第一基板相对设置。 第一感测间隔件设置在中心区域上并且位于第一和第二基板之间。 第二检测间隔件设置在周边区域上并且在第一和第二基板之间。 在第一感测间隔物和与第一感测间隔物相对设置的第一相对电极之间存在第一感测间隙。 第二检测间隔件和对应于第二检测间隔件设置的第二相对电极之间存在第二检测间隙。 第一感测间隙大于第二感测间隙。

公开(公告)号：US20100109076A1

公开(公告)日：2010-05-06

申请号：US12264879

申请日：2008-11-04

申请人： Shih-Yu Wang ,  Chia-Ling Lu ,  Yan-Yu Chen ,  Yu-Lien Liu ,  Tao-Cheng Lu

发明人： Shih-Yu Wang ,  Chia-Ling Lu ,  Yan-Yu Chen ,  Yu-Lien Liu ,  Tao-Cheng Lu

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L27/0262 ,  H01L27/0251 ,  H01L29/7436

摘要： A semiconductor device includes a first well region of a first conductivity, a second well region of a second conductivity type, a source region of the second conductivity type within the first well region, and a drain region of the second conductivity type at least partially within the second well region. A well contact to the first well region is coupled to the source. A first doped region of the first conductivity type and a second doped region of the second conductivity type are located in the second well region. A first transistor includes the first doped region, the second well region, and the first well region. The first transistor is coupled to a switch device. A second transistor includes the second well region, the first well region, and the source region. The first and the second transistors are configured to provide a current path during an ESD event.

摘要翻译： 半导体器件包括第一导电类型的第一阱区域，第二导电类型的第二阱区域，第一阱区域内的第二导电类型的源极区域和至少部分地在第二阱区域内的第二导电类型的漏极区域 第二个井区。 与第一阱区的良好接触耦合到源。 第一导电类型的第一掺杂区域和第二导电类型的第二掺杂区域位于第二阱区域中。 第一晶体管包括第一掺杂区域，第二阱区域和第一阱区域。 第一晶体管耦合到开关器件。 第二晶体管包括第二阱区，第一阱区和源极区。 第一和第二晶体管被配置为在ESD事件期间提供电流路径。