摘要:
Heat switch. The switch includes a magnetostrictive member and a coil arranged to apply a magnetic field to the magnetostrictive member to cause the member to change from a first state to a second state of elongation. A heat conductive flexible structure is coupled to the magnetostrictive member so as to change its lateral extent in response to a change from the first state of elongation to the second state of elongation of the magnetostrictive member. A heat conductive housing is adjacent to at least one surface of the flexible structure so that the at least one surface of the flexible structure is in contact with the housing in one state of elongation of the magnetostrictive member and out of contact with the housing in the other state of elongation of the magnetostrictive member. The switch controls the flow of heat from a relatively warmer surface to a relatively colder surface.
摘要:
A terbium-dysprosium-iron magnetostrictive material of the type Tb1-xDyxFe2-y wherein x is less than 0.7, and y is less than or equal to 0.1, and devices using these materials.
摘要:
Tunable RF cavity. The cavity includes a magnetostrictive material coupled to the cavity and a magnetic coil configured to impress a magnetic field on the magnetostrictive material. Control circuitry energizes the magnetic coil to control the shape of the magnetostrictive material, thereby to control the length of the cavity to tune its resonant frequency.
摘要:
A method for creating an oxide layer having a reduced copper concentration over a surface of an object comprising aluminum and copper for use in a semiconductor processing system. The oxide layer produced using a plasma electrolytic oxidation process has a reduced copper peak concentration, which decreases a risk of copper contamination, and includes magnesium oxides that can be converted to magnesium halide upon exposure to an excited halogen-comprising gas or halogen-comprising plasma to increase the erosion/corrosion resistance of the oxide layer.
摘要:
A method for creating a protective layer over a surface of an object comprising aluminum and magnesium for use in a semiconductor processing system, which includes oxidizing the surface of the object using a plasma electrolytic oxidation process. The method also includes generating a halogen-comprising plasma by exciting a gas comprising a halogen. The method also includes exposing the oxidized surface to the halogen-comprising plasma or excited gas.
摘要:
A terbium-dysprosium-iron magnetostrictive material of the type Tb1-xDyxFe2-y wherein x is less than 0.7, and y is less than or equal to 0.1, and devices using these materials.
摘要:
A method for creating an oxide layer having a reduced copper concentration over a surface of an object comprising aluminum and copper for use in a semiconductor processing system. The oxide layer produced using a plasma electrolytic oxidation process has a reduced copper peak concentration, which decreases a risk of copper contamination, and includes magnesium oxides that can be converted to magnesium halide upon exposure to an excited halogen-comprising gas or halogen-comprising plasma to increase the erosion/corrosion resistance of the oxide layer.
摘要:
A Terbium-Dysprosium-Iron magnetostrictive material of the type Tb1−xDyxFe2−y wherein x is less than 0.7, and y is less than or equal to 0.1, and devices using these materials.