Heat switch
    1.
    发明申请
    Heat switch 审中-公开
    热开关

    公开(公告)号:US20050283230A1

    公开(公告)日:2005-12-22

    申请号:US11153976

    申请日:2005-06-16

    IPC分类号: A61F2/06 F25D19/00

    CPC分类号: F25D19/006

    摘要: Heat switch. The switch includes a magnetostrictive member and a coil arranged to apply a magnetic field to the magnetostrictive member to cause the member to change from a first state to a second state of elongation. A heat conductive flexible structure is coupled to the magnetostrictive member so as to change its lateral extent in response to a change from the first state of elongation to the second state of elongation of the magnetostrictive member. A heat conductive housing is adjacent to at least one surface of the flexible structure so that the at least one surface of the flexible structure is in contact with the housing in one state of elongation of the magnetostrictive member and out of contact with the housing in the other state of elongation of the magnetostrictive member. The switch controls the flow of heat from a relatively warmer surface to a relatively colder surface.

    摘要翻译: 热开关。 开关包括磁致伸缩构件和布置成向磁致伸缩构件施加磁场以使构件从第一状态变为第二状态的线圈。 导热柔性结构耦合到磁致伸缩构件,以响应于从第一延伸状态向第二延伸状态的变化而改变其横向延伸。 导热壳体与柔性结构的至少一个表面相邻,使得柔性结构的至少一个表面在磁致伸缩构件的一个伸长状态下与壳体接触并且在壳体中与壳体接触 磁致伸缩构件的其它伸长状态。 开关控制从相对较温暖的表面到相对较冷的表面的热流。

    Tunable superconducting RF cavity
    3.
    发明申请
    Tunable superconducting RF cavity 审中-公开
    可调谐超导RF腔

    公开(公告)号:US20050260951A1

    公开(公告)日:2005-11-24

    申请号:US10848667

    申请日:2004-05-19

    IPC分类号: H01P7/06 H04B1/04 H04B1/40

    CPC分类号: H01P7/06

    摘要: Tunable RF cavity. The cavity includes a magnetostrictive material coupled to the cavity and a magnetic coil configured to impress a magnetic field on the magnetostrictive material. Control circuitry energizes the magnetic coil to control the shape of the magnetostrictive material, thereby to control the length of the cavity to tune its resonant frequency.

    摘要翻译: 可调谐射频腔。 空腔包括耦合到空腔的磁致伸缩材料和被配置为在磁致伸缩材料上施加磁场的磁性线圈。 控制电路为磁线圈通电以控制磁致伸缩材料的形状,从而控制空腔的长度以调谐其谐振频率。

    Methods and Apparatus for Protecting Plasma Chamber Surfaces
    5.
    发明申请
    Methods and Apparatus for Protecting Plasma Chamber Surfaces 审中-公开
    用于保护等离子体腔体表面的方法和装置

    公开(公告)号:US20110005922A1

    公开(公告)日:2011-01-13

    申请号:US12499453

    申请日:2009-07-08

    IPC分类号: C23C14/34

    摘要: A method for creating a protective layer over a surface of an object comprising aluminum and magnesium for use in a semiconductor processing system, which includes oxidizing the surface of the object using a plasma electrolytic oxidation process. The method also includes generating a halogen-comprising plasma by exciting a gas comprising a halogen. The method also includes exposing the oxidized surface to the halogen-comprising plasma or excited gas.

    摘要翻译: 一种用于在半导体处理系统中使用的用于在包括铝和镁的物体的表面上形成保护层的方法,其包括使用等离子体电解氧化工艺氧化物体的表面。 该方法还包括通过激发包含卤素的气体产生含卤素的等离子体。 该方法还包括将氧化的表面暴露于含卤素等离子体或激发气体。