公开(公告)号：US20160202132A1

公开(公告)日：2016-07-14

申请号：US14913067

申请日：2014-07-30

Applicant: DENSO CORPORATION

Inventor： Takashi INOUE ,  Kensuke HATA ,  Tetsuya KATOH ,  Kenichi SAKAI ,  Mayumi UNO ,  Junichi TAKEYA

IPC: G01L1/22 ,  H01L51/05

CPC classification number: G01L1/2293 ,  G01L1/18 ,  H01L29/22 ,  H01L29/84 ,  H01L51/057

Abstract: A load sensor is constituted by a rib and a vertical transistor including an organic semiconductor film, and a load measurement can be executed based on a change of a gap between a drain electrode and a source electrode which is a channel length of the vertical transistor. Therefore, a change of a current Ids is in a linear relationship to a load applied to the load sensor.

Abstract translation: 负载传感器由肋和包括有机半导体膜的垂直晶体管构成，并且可以基于作为垂直晶体管的沟道长度的漏电极和源电极之间的间隙的变化来执行负载测量。 因此，电流Ids的改变与施加到负载传感器的负载成线性关系。

公开(公告)号：US20170199090A1

公开(公告)日：2017-07-13

申请号：US15314969

申请日：2015-08-21

Applicant: DENSO CORPORATION

Inventor： Hiroo ANAN ,  Takashi INOUE

IPC: G01L1/18 ,  G01L5/16

CPC classification number: G01L1/18 ,  G01L1/20 ,  G01L5/16

Abstract: A load sensor includes: a substrate; a rib on the substrate; and two vertical transistors. Each vertical transistor includes: a gate electrode, a gate insulation film, and a semiconductor thin film on the side surface of the rib; a bottom electrode layer on a bottom of the substrate, on which the rib is not arranged, with contacting the semiconductor thin film; and a top electrode layer on a top of the rib with contacting the semiconductor thin film. Each vertical transistor flows current between the bottom electrode layer and the top electrode layer when a channel region is provided in the semiconductor thin film. Each straight line along normal line directions of the channel regions in the vertical transistors is arranged on a different side surface of the rib from each other, and has a predetermined angle between the straight lines.