公开(公告)号：US20210005597A1

公开(公告)日：2021-01-07

申请号：US17028163

申请日：2020-09-22

Applicant: DENSO CORPORATION

Inventor： Tsuyoshi FUJIWARA ,  Seiji NOMA

IPC: H01L27/01 ,  H01L23/522 ,  H01L21/768

Abstract: A semiconductor device includes a plurality of capacitors with MIM structure disposed in an interconnection layer on a substrate. Each capacitor includes a first electrode and a second electrode provided by any two interconnection parts of the interconnection layer, in which the first electrode is one of the two interconnection parts located adjacent to the substrate and the second electrode is the other located opposite to the substrate with respect to the first electrode. One of the first and second electrode of each capacitor is provided by the same interconnection part as a subject electrode, and a distance between the first electrode and the second electrode is different among the plurality of capacitors to have different capacitances. The subject electrodes provided by the same interconnection part are covered with an insulating film of the interconnection layer, and have ends on a same plane.

公开(公告)号：US20250157961A1

公开(公告)日：2025-05-15

申请号：US19022203

申请日：2025-01-15

Applicant: DENSO CORPORATION

Inventor： Shiro MIWA ,  Kazuyuki KAKUTA ,  Tsuyoshi FUJIWARA

IPC: H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L23/495

Abstract: A semiconductor device includes: a semiconductor substrate for a semiconductor element; a first electrode and a second electrode provided on one surface of the semiconductor element; and a partition wall provided on the one surface of the semiconductor element to separate the first electrode from the second electrode. The first electrode and the second electrode are formed of an Ni plating layer, and the phosphorus concentration in the Ni plating layer is 4 wt % or less. The partition wall is made of an insulating material and has a shape protruding toward the first electrode or the second electrode.

公开(公告)号：US20200095115A1

公开(公告)日：2020-03-26

申请号：US16697517

申请日：2019-11-27

Applicant: DENSO CORPORATION

Inventor： Takahiro KAWANO ,  Hisanori YOKURA ,  Tsuyoshi FUJIWARA

IPC: B81B3/00 ,  B81C1/00 ,  G01L9/00

Abstract: A semiconductor device includes a first substrate having a first surface, and a second substrate having a second surface. A part of the second substrate is bonded to a part of the first surface with atmospheric pressure plasma. The semiconductor device further includes an oxide film disposed on the first surface of the first substrate, and a protection film layered on a surface of the oxide film opposite to the first substrate.

公开(公告)号：US20190214346A1

公开(公告)日：2019-07-11

申请号：US16355917

申请日：2019-03-18

Applicant: DENSO CORPORATION

Inventor： Youichi ASHIDA ,  Tsuyoshi FUJIWARA

IPC: H01L23/532 ,  H01L23/528 ,  H01L23/522

Abstract: A semiconductor device includes a semiconductor substrate, an interlayer dielectric film, a plurality of pad parts, a wiring layer, and a surface protection film. The semiconductor substrate includes a semiconductor element on a surface of the semiconductor substrate. The interlayer dielectric film is disposed on the surface of the semiconductor substrate. The wiring layer is disposed in the interlayer dielectric film. The hard film is disposed opposite to the semiconductor substrate with respect to the interlayer dielectric film, and is harder than the interlayer dielectric film, The pad parts are disposed opposite to the interlayer dielectric film with respect to the hard film, The surface protection film is disposed in at least an opposing region where the pad parts oppose to each other. The surface protection film is a silicon nitride film or a silicon oxide film.

公开(公告)号：US20180350897A1

公开(公告)日：2018-12-06

申请号：US15777681

申请日：2016-11-17

Applicant: DENSO CORPORATION

Inventor： Youhei ODA ,  Tsuyoshi FUJIWARA

IPC: H01L49/02 ,  C23C16/06 ,  C23C16/40 ,  C23C16/34 ,  C23C14/06 ,  H01L21/285

CPC classification number: H01L28/75 ,  C23C14/06 ,  C23C16/06 ,  C23C16/34 ,  C23C16/40 ,  H01L21/28562

Abstract: Roughness is eliminated and planarization is achieved by a metal oxide film on a surface of a lower electrode. Consequently, damage on a capacitive film caused by the roughness of the lower electrode is reduced. Furthermore, physical damage on the capacitive film is reduced by forming a first layer of an upper electrode by, for example, CVD. Consequently, the damage on the capacitive film is suppressed, and the reliability of the capacitive film is improved. Furthermore, not by forming the whole upper electrode by the CVD or the like, but by forming a second layer by PCD or the like on the first layer, an increase in resistance of the upper electrode is suppressed as well.