摘要:
Embodiments of the present invention may be utilized to improve electron beam deflection. One embodiment provides an electrostatic deflection system with electrodes that minimize aberrations and to achieve vertical incidence simultaneously. By using at least two stages of deflection for a deflection direction, the present invention allows the deflected electron beam to pass a back focal plane of an objective lens while deflection capacitors are not disposed across the back focal plane. As a result, deflection electrodes can have an angle of 120° to minimize aberrations and simultaneously achieve vertical incidence of the electron beam on a target to avoid distortions or changes in magnification with height variations of the target or focus variations.
摘要:
Methods and apparatus to facilitate the measurement of the amount of scattered electrons collected by an anti-fogging baffle arrangement are provided. For some embodiments, by affixing a lead to an electrically isolated (floating) portion of the baffle arrangement, the amount of scattered electrons collected thereby may be read out, for example, as a current signal. Thus, for such embodiments, the baffle arrangement may double as a detector, allowing an image of surface (e.g., a mask or substrate surface) to be generated.
摘要:
An apparatus and method for deflecting electron beams with high precision and high throughput. At least one electrode of a deflecting capacitor is connected to a signal source via a coaxial cable. A termination resistor is further connected to the coaxial cable and the electrode at the joint of the coaxial cable and the electrode. The termination resistor has a resistance matched to the impedance of the coaxial cable and the electrode has an impedance matched to half of the impedance of the coaxial. The deflecting capacitors of the present invention have a minimized loss of precision due to eddy current. The spacing of electrodes in the deflecting capacitors is reduced by a factor of approximately two compared to the state-the-art system.
摘要:
Disclosed is a biassing scheme for a beam position location apparatus (50) which comprises electron detector diodes (52) in an electron beam lithography machine (10) such that the detector diodes (52) deposit fewer secondary electrons (62) on a substrate (16) being processed by the electron beam (22) and thus reduce or eliminate any charge buildup on said substrate which deflect the electron beam (22) causing pattern distortion.
摘要:
An electron beam source for use in an electron gun. The electron beam source includes an emitter terminating in a tip. The emitter is configured to generate an electron beam. The electron beam source further includes a suppressor electrode laterally surrounding the emitter such that the tip of the emitter protrudes through the suppressor electrode and an extractor electrode disposed adjacent the tip of the emitter. The extractor electrode comprises a magnetic disk whose magnetic field is aligned with an axis of the electron beam.