摘要:
A technique to identify non-visual defects, such as SEM non-visual defects (SNVs), includes generating an image of a layer of a wafer, evaluating at least one attribute of the image using a classifier, and identifying the non-visual defects on the layer of the wafer. A controller can be configured to identify the non-visual defects using the classifier. This controller can communicate with a defect review tool, such as a scanning electron microscope (SEM).
摘要:
Techniques for yield management in semiconductor inspection systems are described. According to one aspect of the present invention, columns of sensing mechanism are configured with different functions, weights and performances to inspect a sample to significantly reduce the time that would be otherwise needed when all the columns were equally applied.
摘要:
A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates the degree of contamination on the basis of the substance or substances specified in the narrow region.
摘要:
An image monitor system monitors characteristics of an ion beam employed in ion implantation. The monitored characteristics can include particle count, particle information, beam current intensity, beam shape, and the like. The system includes one or more image sensors that capture frames or images along a beam path of an ion beam. An image analyzer analyzes the captured frames to obtain measured characteristics. A controller determines adjustments or corrections according to the measured characteristics and desired beam characteristics.
摘要:
An electroscope system excites a certain area of a surface of a sample to emit electrons with a characteristic distribution of kinetic energies. The analyzed area of the sample is excited by an electron beam produced by a field emission source. A monochromator energy filter for the electron beam is down-stream of the field emission source. The field emission electron source is preferably a Schottky source, and a monochromator energy filter reduces energy dispersion of the electrons of the electron beam to less than 0.2 eV. Microareas of linear dimensions on the order of ten nanometers may be analyzed while observing them. Information on the chemical state of the detected elements present at the surface of the examined microarea of the sample is gathered.
摘要:
Methods and apparatus to facilitate the measurement of the amount of scattered electrons collected by an anti-fogging baffle arrangement are provided. For some embodiments, by affixing a lead to an electrically isolated (floating) portion of the baffle arrangement, the amount of scattered electrons collected thereby may be read out, for example, as a current signal. Thus, for such embodiments, the baffle arrangement may double as a detector, allowing an image of surface (e.g., a mask or substrate surface) to be generated.
摘要:
A non-contact angle measuring apparatus includes a matter-wave and energy (MWE) particle source and a detector. The MWE particle source is used for generating boson or fermion particles. The detector is used for detecting a plurality peaks or valleys of an interference pattern generated by 1) the boson or fermion particles corresponding to a slit, a bump, or a hole of a first plane and 2) matter waves' wavefront-split associated with the boson or fermion particles reflected by a second plane, wherein angular locations of the plurality peaks or valleys of the interference pattern, a first distance between a joint region of the first plane and the second plane, and a second distance between the detector and the slit are used for deciding an angle between the first plane and the second plane.
摘要:
A control method includes: (a) connecting a power supply to an electrode of an electrostatic chuck inside a chamber and applying a voltage from the power supply to the electrode; (b) after (a), switching a connection between the electrode and the power supply to a non-connection state; (c) after (b), supplying a gas into the chamber to generate plasma; and (d) measuring a potential of the electrode during (c).
摘要:
Methods of orientation imaging microscopy (OIM) techniques generally performed using transmission electron microscopy (TEM) for nanomaterials using dynamical theory is presented. Methods disclosed may use a wide angle convergent beam electron diffraction for performing OIM by generating a diffraction pattern having at least three diffraction discs that may provide additional information that is not available otherwise.
摘要:
Disclosed is a scanning electron microscope provided with a calculation device (403) for measuring the dimension of a pattern on a sample (413), characterized in that the amount of change of a pattern shape, caused by electron beam irradiation, is calculated and stored, and a pattern shape contour (614; 815; 1512) before the sample is irradiated with an electron beam is restored from a pattern shape contour (613; 814; 1511) in a scanning electron microscope image (612; 813; 1510) after the sample is irradiated with an electron beam using the calculated amount and, then, the pattern shape contour (614; 815; 1512) is displayed. Thus, the shrinking of a resist and/or the effect of electrostatic charge caused when a sample is irradiated with an electron beam are eliminated, so that the shape contour of a two-dimensional pattern before irradiating an electron beam can be restored with a high degree of accuracy, and the dimension of a pattern can be measured with a high degree of accuracy, using the restored image.