公开(公告)号：US11840645B2

公开(公告)日：2023-12-12

申请号：US17163372

申请日：2021-01-30

Applicant: ENTEGRIS, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

Inventor： Rajiv K. Singh ,  Sunny De ,  Deepika Singh ,  Chaitanya Dnyanesh Ginde ,  Aditya Dilip Verma

IPC: C09G1/02 ,  H01L21/321 ,  B24B37/00

CPC classification number: C09G1/02 ,  B24B37/00 ,  H01L21/3212

Abstract: A slurry for chemical mechanical polishing (CMP) includes an aqueous liquid carrier, an oxygen and anion containing transition metal compound or polyatomic cations including a transition metal and oxygen or hydrogen, and a per-based oxidizer. The anion for the oxygen and anion containing transition metal compound can include oxynitrate, oxychloride, oxyhydroxide, oxyacetate, oxysulfide, or oxysulfate. The per-based oxidizer can be a permanganate compound.

公开(公告)号：US20240052201A1

公开(公告)日：2024-02-15

申请号：US18231926

申请日：2023-08-09

Applicant: ENTEGRIS, INC.

Inventor： Rajiv K. Singh ,  Sunny De ,  Aditya Dilip Verma

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: The present disclosure describes a slurry composition to reduce roughness a surface, such as a polycrystalline material including silicon carbide, alumina, diamond, and carbon. The present disclosure can also be applied to single crystal materials (e.g., silicon carbide, sapphire, or diamond).

公开(公告)号：US20230002641A1

公开(公告)日：2023-01-05

申请号：US17846929

申请日：2022-06-22

Applicant: ENTEGRIS, INC.

Inventor： Rajiv K. Singh ,  Sunny De ,  Akshay Rajopadhye ,  Aditya D. Verma

IPC: C09G1/02 ,  H01L21/321

Abstract: The invention provides compositions useful in the polishing of transition metal-containing surfaces typically found on microelectronic devices. In one aspect, the invention provides a composition comprising: a liquid carrier; titania abrasive particles, wherein the particles are at least partially coated with alumina or amorphous silica to provide coated titania abrasive particles; wherein the coated titania abrasive particles have an average diameter of about 50 nm to about 250 nm; and a corrosion inhibitor. The invention, the compositions are advantageously utilized to polish microelectronic device substrates having transition metal-containing surfaces thereon. In certain embodiments, the surfaces are chosen from molybdenum and ruthenium-containing films and show markedly improved selectivity relative to thermal oxide.

公开(公告)号：US20220396715A1

公开(公告)日：2022-12-15

申请号：US17840448

申请日：2022-06-14

Applicant: ENTEGRIS, INC.

Inventor： Rajiv K. Singh ,  Sunny De

IPC: C09G1/02 ,  B24B37/04

Abstract: The invention provides improved slurries for the polishing of hard materials such as those having a Mohs hardness of greater than about 6. Exemplary hard surfaces include sapphire, silicon carbide, silicon nitride, and gallium nitride, and diamond. In the compositions and method of the invention, novel compositions comprising a unique combination of additives which surprisingly were found to uniformly disperse diamond particles having a wide range of particle size in a slurry. In the method of the invention, the generally alkaline slurry compositions of the invention are capable of utilizing diamond particle sizes of greater than 40 microns while effecting good removal rates. In such cases, when utilized with a suitable pad, rapid and planar grinding of silicon carbide, silicon nitride, sapphire, gallium nitride, and diamond is possible, with uniform surface damage.

公开(公告)号：US20240247168A1

公开(公告)日：2024-07-25

申请号：US18411986

申请日：2024-01-12

Applicant: ENTEGRIS, INC.

Inventor： Rajiv K. Singh ,  Aditya Dilip Verma ,  Sunny De

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: A system for polishing a hardmask comprises a composition comprising a permanganate ion of a permanganate oxidizer; a substrate comprising a hardmask that comprises at least one of a non-carbon boron component, a boron-carbon component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof; and a chemical mechanical planarization (CMP) apparatus configured to bring the composition and the substrate into contact so as to remove at least a portion of the hardmask of the substrate.

公开(公告)号：US20230127390A1

公开(公告)日：2023-04-27

申请号：US17970371

申请日：2022-10-20

Applicant: ENTEGRIS, INC.

Inventor： Rajiv K. Singh ,  Sunny De

IPC: B24B1/04 ,  C30B33/00 ,  B24B37/24 ,  C09G1/02

Abstract: The invention provides methodology for final finishing of hard surfaces such as diamond surfaces. In this method, a smooth pad having a surface roughness of about 0.2 nm to about 100 nm, having, for example a thickness ranging from about 0.02 mm to about 5 mm, and a Shore D hardness of 30 or higher, is utilized in conjunction with known polishing slurries to provide diamond surfaces having superior smooth finishes.