公开(公告)号：US11840645B2

公开(公告)日：2023-12-12

申请号：US17163372

申请日：2021-01-30

Applicant: ENTEGRIS, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

Inventor： Rajiv K. Singh ,  Sunny De ,  Deepika Singh ,  Chaitanya Dnyanesh Ginde ,  Aditya Dilip Verma

IPC: C09G1/02 ,  H01L21/321 ,  B24B37/00

CPC classification number: C09G1/02 ,  B24B37/00 ,  H01L21/3212

Abstract: A slurry for chemical mechanical polishing (CMP) includes an aqueous liquid carrier, an oxygen and anion containing transition metal compound or polyatomic cations including a transition metal and oxygen or hydrogen, and a per-based oxidizer. The anion for the oxygen and anion containing transition metal compound can include oxynitrate, oxychloride, oxyhydroxide, oxyacetate, oxysulfide, or oxysulfate. The per-based oxidizer can be a permanganate compound.

公开(公告)号：US20240052201A1

公开(公告)日：2024-02-15

申请号：US18231926

申请日：2023-08-09

Applicant: ENTEGRIS, INC.

Inventor： Rajiv K. Singh ,  Sunny De ,  Aditya Dilip Verma

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: The present disclosure describes a slurry composition to reduce roughness a surface, such as a polycrystalline material including silicon carbide, alumina, diamond, and carbon. The present disclosure can also be applied to single crystal materials (e.g., silicon carbide, sapphire, or diamond).

公开(公告)号：US20230159866A1

公开(公告)日：2023-05-25

申请号：US17991251

申请日：2022-11-21

Applicant: ENTEGRIS, INC.

Inventor： Atanu K. Das ,  Daniela White ,  Michael L. White ,  Jun Liu ,  Aditya Dilip Verma

IPC: C11D11/00 ,  C11D1/72 ,  C11D3/43 ,  C11D3/30 ,  C11D3/04 ,  C11D3/37 ,  C11D3/34 ,  C11D3/39 ,  C11D3/36 ,  C11D3/22 ,  H01L21/02

CPC classification number: C11D11/0047 ,  C11D1/721 ,  C11D3/43 ,  C11D3/30 ,  C11D3/044 ,  C11D3/3776 ,  C11D3/3454 ,  C11D3/3942 ,  C11D3/042 ,  C11D3/361 ,  C11D3/225 ,  H01L21/02057

Abstract: Provided are compositions and methods useful in the post-CMP cleaning of microelectronic devices, in particular, devices which contain one or more surfaces comprising hydrophobic carbon or SiC. In general, the compositions comprise a chelating agent; a water-miscible solvent; a reducing agent; and a pH adjustor, wherein the composition has a pH of about 2 to about 13.

公开(公告)号：US20240247168A1

公开(公告)日：2024-07-25

申请号：US18411986

申请日：2024-01-12

Applicant: ENTEGRIS, INC.

Inventor： Rajiv K. Singh ,  Aditya Dilip Verma ,  Sunny De

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: A system for polishing a hardmask comprises a composition comprising a permanganate ion of a permanganate oxidizer; a substrate comprising a hardmask that comprises at least one of a non-carbon boron component, a boron-carbon component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof; and a chemical mechanical planarization (CMP) apparatus configured to bring the composition and the substrate into contact so as to remove at least a portion of the hardmask of the substrate.