公开(公告)号：US20230227960A1

公开(公告)日：2023-07-20

申请号：US17968126

申请日：2022-10-18

Applicant: Electronics and Telecommunications Research Institute

Inventor： O-Kyun KWON ,  Namje KIM ,  Ho Sung KIM ,  Miran PARK ,  SEUNGCHUL LEE ,  Won Seok HAN

IPC: C23C14/04 ,  G02B6/132

CPC classification number: C23C14/042 ,  G02B6/132 ,  G02B2006/12173

Abstract: Provided is a method of manufacturing an optical integrated device. The method includes forming a lower clad layer on a substrate, forming a plurality of mask patterns arranged in one direction on the lower clad layer, forming a core layer on a portion of the lower clad layer by a selective area growth method using the mask patterns as deposition masks, and forming an upper clad layer on the core layers, wherein the mask patterns have different widths or include mask layers of different materials.

公开(公告)号：US20240053652A1

公开(公告)日：2024-02-15

申请号：US18363466

申请日：2023-08-01

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hyun Soo KIM ,  Ho Sung KIM ,  Yongsoon BAEK ,  Won Seok HAN

IPC: G02F1/21 ,  G02F1/225

CPC classification number: G02F1/212 ,  G02F1/225 ,  G02F1/2257

Abstract: Disclosed are a Mach-Zehnder interferometric optical modulator and a method for manufacturing the same. The modulator includes first and second lower clad layers stacked on a substrate, a core layer on the first and second lower clad layers, a first upper clad layer on the core layer, a second upper clad layer on the first upper clad layer, and electrodes on the second upper clad layer. The second upper clad layer includes an input waveguide, an output waveguide spaced apart from the input waveguide, branch waveguides branched from the input waveguide and coupled to the output waveguide, and insulating blocks provided on both outer sides of the branch waveguides.

公开(公告)号：US20240213085A1

公开(公告)日：2024-06-27

申请号：US18488718

申请日：2023-10-17

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Ho Sung KIM ,  Daemyeong GEUM

IPC: H01L21/762 ,  H01L21/02

CPC classification number: H01L21/76251 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02587 ,  H01L21/02664

Abstract: Disclosed is a large-area III-V semiconductor layer transferring method. The large-area III-V semiconductor layer transferring method includes: forming III-V semiconductor dies on a lower substrate; forming dielectric patterns on the III-V semiconductor dies and the lower substrate exposed between the III-V semiconductor dies; forming a lower III-V semiconductor layer on the dielectric patterns and the III-V semiconductor dies; forming a sacrificial layer on the lower III-V semiconductor layer; forming an upper III-V semiconductor layer on the sacrificial layer; bonding an upper substrate onto the III-V semiconductor layer; and removing the sacrificial layer.

公开(公告)号：US20240313503A1

公开(公告)日：2024-09-19

申请号：US18606448

申请日：2024-03-15

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Namje KIM ,  O-Kyun KWON ,  Ho Sung KIM ,  Miran PARK ,  Seungchul LEE

IPC: H01S5/026 ,  H01S5/042 ,  H01S5/12

CPC classification number: H01S5/0265 ,  H01S5/04256 ,  H01S5/12

Abstract: Provided is an electro-absorption modulated lasers with identical-active layer. The lasers include a substrate having a passive waveguide region, an LD region on one side of the passive waveguide region, and an EAM region on the other side of the passive waveguide region, an active layer provided on the substrate and extending from the LD region to the EAM region, a grating layer provided on the active layer, a clad layer provided on the grating layer, and electrodes provided in the LD region and the EAM region of the clad layer.