公开(公告)号：US3895430A

公开(公告)日：1975-07-22

申请号：US39892873

申请日：1973-09-20

Applicant: GEN ELECTRIC

Inventor： WILSON RONALD H ,  GIBBONS MARTIN D ,  BLUMENFELD SAMUEL M

IPC: H01J29/45 ,  H01L21/00 ,  H01L27/00 ,  B01J17/00

CPC classification number: H01L21/00 ,  H01J9/233 ,  H01J29/455 ,  H01L27/00 ,  Y10S148/003 ,  Y10S148/122 ,  Y10S148/172

Abstract: Highlight blooming is reduced in semiconductor diode array camera targets by forming electron-hole recombination sites intermediate the diodes. These sites collect excess holes created by intense light images incident on the target and reduce blooming. The recombination sites are formed by selectively irradiating regions of the semiconductor substrate between the diodes and beyond the limits of the depletion region surrounding the reverse-biased diodes. Useful forms of radiation which produce these recombination sites include electron beam and ultraviolet rays.

Abstract translation: 通过在二极管之间形成电子 - 空穴复合位点，在半导体二极管阵列相机目标中突出显现起霜。 这些网站收集了由激光照射到目标上造成的多余的洞，并减少了起霜。 通过在二极管之间选择性地照射半导体衬底的区域并超出围绕反向偏置二极管的耗尽区的极限来形成复合位点。 产生这些重组位点的有用的辐射形式包括电子束和紫外线。

公开(公告)号：US3897277A

公开(公告)日：1975-07-29

申请号：US41115173

申请日：1973-10-30

Applicant: GEN ELECTRIC

Inventor： BLUMENFELD SAMUEL M

IPC: H01L21/208 ,  C30B13/02 ,  C30B13/06 ,  H01L21/24 ,  H01L29/06 ,  H01L31/00 ,  H01L7/34

CPC classification number: H01L29/0692 ,  C30B13/02 ,  C30B13/06 ,  H01L21/24 ,  H01L31/00

Abstract: A thermal gradient zone melting technique is employed to migrate an array of metal buttons through a body of semiconductor material to form high aspect ratio P-N junctions therein. Semiconductor devices embodying such P-N junctions are suitable for employment in X-ray and infrared detection and imaging. Each button preferably has the configuration of an equilateral triangle and the array preferably has a hexagonal configuration.

Abstract translation: 使用热梯度区熔化技术将金属按钮阵列迁移穿过半导体材料体以在其中形成高纵横比P-N结。 体现这种P-N结的半导体器件适用于X射线和红外检测和成像。 每个按钮优选地具有等边三角形的构造，并且阵列优选地具有六边形构造。