Abstract:
Highlight blooming is reduced in semiconductor diode array camera targets by forming electron-hole recombination sites intermediate the diodes. These sites collect excess holes created by intense light images incident on the target and reduce blooming. The recombination sites are formed by selectively irradiating regions of the semiconductor substrate between the diodes and beyond the limits of the depletion region surrounding the reverse-biased diodes. Useful forms of radiation which produce these recombination sites include electron beam and ultraviolet rays.
Abstract:
An improved system for emission of electrons in response to xrays comprises a phosphor layer separated from a photocathode layer by a light transparent barrier layer which protects the phosphors and the binders in the phosphor layer from attack by the chemicals in the photocathode layer. The system is useful in various types of camera tubes including image orthicons and intensifier vidicons as well as direct view tubes to convert a light image of X-rays into a corresponding electron emission pattern.