公开(公告)号：US3693003A

公开(公告)日：1972-09-19

申请号：US3693003D

申请日：1970-11-19

Applicant: GEN ELECTRIC

Inventor： SIGSBEE RAYMOND A ,  WILSON RONALD H

IPC: G11C13/04 ,  H01J29/44 ,  H01L27/105 ,  H01L29/00 ,  G11C7/00 ,  G11C11/36 ,  H01J1/78

CPC classification number: H01L27/105 ,  G11C13/048 ,  H01J29/44 ,  H01L29/00

Abstract: A storage target for a read, write and erase memory is disclosed utilizing a semiconductor memory storage element. The storage of information relies on charge storage to create or pinch off a conductive channel between an internal conductive electrode and isolated diode junctions. An electron beam, irradiating each storage area, is used for reading, writing and erasing.

Abstract translation: 利用半导体存储器存储元件公开了用于读，写和擦除存储器的存储目标。 信息的存储依赖于电荷存储来产生或夹断内部导电电极和隔离二极管结之间的导电通道。 用于照射每个存储区域的电子束用于读取，写入和擦除。

公开(公告)号：US3895430A

公开(公告)日：1975-07-22

申请号：US39892873

申请日：1973-09-20

Applicant: GEN ELECTRIC

Inventor： WILSON RONALD H ,  GIBBONS MARTIN D ,  BLUMENFELD SAMUEL M

IPC: H01J29/45 ,  H01L21/00 ,  H01L27/00 ,  B01J17/00

CPC classification number: H01L21/00 ,  H01J9/233 ,  H01J29/455 ,  H01L27/00 ,  Y10S148/003 ,  Y10S148/122 ,  Y10S148/172

Abstract: Highlight blooming is reduced in semiconductor diode array camera targets by forming electron-hole recombination sites intermediate the diodes. These sites collect excess holes created by intense light images incident on the target and reduce blooming. The recombination sites are formed by selectively irradiating regions of the semiconductor substrate between the diodes and beyond the limits of the depletion region surrounding the reverse-biased diodes. Useful forms of radiation which produce these recombination sites include electron beam and ultraviolet rays.

Abstract translation: 通过在二极管之间形成电子 - 空穴复合位点，在半导体二极管阵列相机目标中突出显现起霜。 这些网站收集了由激光照射到目标上造成的多余的洞，并减少了起霜。 通过在二极管之间选择性地照射半导体衬底的区域并超出围绕反向偏置二极管的耗尽区的极限来形成复合位点。 产生这些重组位点的有用的辐射形式包括电子束和紫外线。

公开(公告)号：US3664895A

公开(公告)日：1972-05-23

申请号：US3664895D

申请日：1969-06-13

Applicant: GEN ELECTRIC

Inventor： SCHAEFER DONALD L ,  WILSON RONALD H

IPC: H01J29/45 ,  H01L21/00 ,  H01L27/00 ,  H01L7/44

CPC classification number: H01L21/00 ,  H01J9/233 ,  H01J29/455 ,  H01L27/00 ,  Y10S148/118

Abstract: Silicon diode array vidicon targets characterized by a silicon oxide insulator disposed between P-type conductivity regions forming discrete diodes within an N-type conductivity wafer have been made substantially immune to burn-in by the utilization of a 0,1 to 3 micron thick electrically conducting glass layer to leak charge formed on the insulator to the adjacent P-type conductivity regions of the target. Preferably the electronically conducting glass is an alkaline earth metal borate glass containing an oxide of a metal, e.g., iron, vanadium, cobalt, etc., providing ions of both a higher valence state and a lower valence state within the glass to permit regulation of the resistivity of the glass layer during fabrication of the bulk glass. To inhibit crazing of the glass layer while providing superior contact between the glass and the surface of the target, the glass layer is R.F. sputter deposited atop the target employing a sputtering atmosphere, e.g., argon, nitrogen, oxygen, selected to provide the desired resistivity in the deposited glass layer.

Abstract translation: 通过在N型导电晶片内形成分立二极管的P型导电区域之间设置的氧化硅绝缘体的硅二极管阵列视频体目标已被制造为通过利用0.1至3微米厚的电 导电玻璃层将形成在绝缘体上的电荷泄漏到目标的相邻P型导电区域。 优选地，电子导电玻璃是含有金属氧化物（例如铁，钒，钴等）的碱土金属硼酸盐玻璃，其在玻璃中提供更高价态和低价态的离子，以允许调节 在制造大容量玻璃时玻璃层的电阻率。 为了抑制玻璃层的龟裂，同时在玻璃和靶的表面之间提供优异的接触，玻璃层是R.F. 溅射沉积在目标上方，使用溅射气氛，例如氩气，氮气，氧气，被选择以在沉积的玻璃层中提供所需的电阻率。