公开(公告)号：US20140273299A1

公开(公告)日：2014-09-18

申请号：US13841919

申请日：2013-03-15

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Alok Vaid ,  Carsten Hartig

IPC: H01L21/66 ,  G01D21/00

CPC classification number: H01L22/20 ,  G01D3/0365 ,  H01L21/02002 ,  H01L21/67248 ,  H01L21/67276 ,  H01L22/10 ,  H01L22/12 ,  H01L22/26

Abstract: Methods and systems are provided for fabricating and measuring physical features of a semiconductor device structure. An exemplary method of fabricating a semiconductor device structure involves obtaining a first measurement of a first attribute of the semiconductor device structure from a first metrology tool, obtaining process information pertaining to fabrication of one or more features of the semiconductor device structure by a first processing tool, and determining an adjusted measurement for the first attribute based at least in part on the first measurement in a manner that is influenced by the process information.

Abstract translation: 提供了用于制造和测量半导体器件结构的物理特征的方法和系统。 制造半导体器件结构的示例性方法包括从第一计量工具获得半导体器件结构的第一属性的第一测量，通过第一处理工具获得关于制造半导体器件结构的一个或多个特征的处理信息 并且至少部分地基于由所述处理信息影响的方式的所述第一测量来确定所述第一属性的调整的测量。

公开(公告)号：US08892237B2

公开(公告)日：2014-11-18

申请号：US13841919

申请日：2013-03-15

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Alok Vaid ,  Carsten Hartig

IPC: G06F19/00 ,  H01L21/66 ,  G01D21/00 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L22/20 ,  G01D3/0365 ,  H01L21/02002 ,  H01L21/67248 ,  H01L21/67276 ,  H01L22/10 ,  H01L22/12 ,  H01L22/26

Abstract: Methods and systems are provided for fabricating and measuring physical features of a semiconductor device structure. An exemplary method of fabricating a semiconductor device structure involves obtaining a first measurement of a first attribute of the semiconductor device structure from a first metrology tool, obtaining process information pertaining to fabrication of one or more features of the semiconductor device structure by a first processing tool, and determining an adjusted measurement for the first attribute based at least in part on the first measurement in a manner that is influenced by the process information.

Abstract translation: 提供了用于制造和测量半导体器件结构的物理特征的方法和系统。 制造半导体器件结构的示例性方法包括从第一计量工具获得半导体器件结构的第一属性的第一测量，通过第一处理工具获得关于制造半导体器件结构的一个或多个特征的处理信息 并且至少部分地基于由所述处理信息影响的方式的所述第一测量来确定所述第一属性的调整的测量。

公开(公告)号：US20150115153A1

公开(公告)日：2015-04-30

申请号：US14063531

申请日：2013-10-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Adam Michal Urbanowicz ,  Carsten Hartig ,  Daniel Fischer

IPC: G01N21/95 ,  G01N23/00

CPC classification number: G01N21/9501 ,  G01N21/94 ,  G01N23/00

Abstract: A method of the detection of particle contamination on a semiconductor wafer is provides which includes examining an area of the semiconductor wafer by a metrology system comprising a scatterometry or ellipsometry/reflectometry tool to obtain measured metrology data, comparing the measured metrology data with reference metrology data and determining the presence of particle contamination in the examined area of the semiconductor wafer based on the comparison of the measured metrology data with the reference metrology data.

Abstract translation: 提供了一种检测半导体晶片上的颗粒污染的方法，其包括通过包括散射仪或椭偏仪/反射测量工具的测量系统检查半导体晶片的面积，以获得测量的测量数据，将测量的测量数据与参考测量数据进行比较 并且基于测量的测量数据与参考测量数据的比较来确定半导体晶片的检查区域中颗粒污染的存在。

公开(公告)号：US10115621B2

公开(公告)日：2018-10-30

申请号：US15153936

申请日：2016-05-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Peter Moll ,  Martin Schmidt ,  Carsten Hartig ,  Matthias Ruhm ,  Stefan Thierbach ,  Stefan Rongen ,  Daniel Fischer ,  Andreas Schuring ,  Guido Überreiter

IPC: H01L21/68 ,  H01L23/544 ,  G03F7/20 ,  G03F9/00 ,  H01L21/66

Abstract: Methods for in-die overlay reticle measurement and the resulting devices are disclosed. Embodiments include providing parallel structures in a first layer on a substrate; determining measurement sites, in a second layer above the first layer, void of active integrated circuit elements; forming overlay trenches, in the measurement sites and parallel to the structures, exposing sections of the structures, wherein each overlay trench is aligned over a structure and over spaces between the structure and adjacent structures; determining a trench center-of-gravity of an overlay trench; determining a structure center-of-gravity of a structure exposed in the overlay trench; and determining an overlay parameter based on a difference between the trench center-of-gravity and the structure center-of-gravity.

公开(公告)号：US09177873B2

公开(公告)日：2015-11-03

申请号：US13953532

申请日：2013-07-29

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Alok Vaid ,  Carsten Hartig ,  Lokesh Subramany

IPC: G06F17/00 ,  H01L21/66 ,  G03F7/20

CPC classification number: H01L22/00 ,  G03F7/70616 ,  H01L22/12

Abstract: Methods and systems are provided for fabricating and measuring physical features of a semiconductor device structure. An exemplary method of fabricating a semiconductor device structure involves obtaining raw measurement data for a wafer of semiconductor material from a metrology tool and adjusting a measurement model utilized by a metrology tool based at least in part on the raw measurement data and a value for a design parameter. The wafer has that value for the design parameter and an attribute of the semiconductor device structure fabricated thereon, wherein the measurement model is utilized by the metrology tool to convert the raw measurement data to a measurement value for the attribute.

Abstract translation: 提供了用于制造和测量半导体器件结构的物理特征的方法和系统。 制造半导体器件结构的示例性方法包括从计量工具获得用于半导体材料的晶片的原始测量数据，并且至少部分地基于原始测量数据和设计值来调整由测量工具使用的测量模型 参数。 晶片具有该设计参数的值以及其上制造的半导体器件结构的属性，其中测量模型由测量工具用于将原始测量数据转换为该属性的测量值。

公开(公告)号：US09171765B2

公开(公告)日：2015-10-27

申请号：US14186012

申请日：2014-02-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Daniel Fischer ,  Carsten Hartig

IPC: H01L21/66 ,  G06T7/00

CPC classification number: H01L22/26 ,  G06T5/40 ,  G06T7/0004 ,  G06T7/0006 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01L22/12 ,  H01L22/20

Abstract: Methods of determining an amount and/or a thickness of residual material in a via based on LL-BSE images of the material are disclosed. Embodiments include etching a plurality of vias through at least one material layer on a wafer; loading the wafer with predetermined measurement parameters in a CD-SEM; acquiring an image of each via of interest using LL-BSE imaging; quantifying grey level values of the images; characterizing residuals of the at least one material layer in each via based on the grey level values; determining an etching success rate based on the characterizing of the residuals; adjusting the etching based on the determining of the etching success rate; and repeating the steps of acquiring, quantifying, characterizing, determining, and adjusting until a desired etching success rate is achieved.

Abstract translation: 公开了基于材料的LL-BSE图像确定通​​孔中的残余材料的量和/或厚度的方法。 实施例包括通过晶片上的至少一个材料层蚀刻多个通孔; 在CD-SEM中用预定的测量参数加载晶片; 使用LL-BSE成像获取感兴趣的每个通道的图像; 量化图像的灰度值; 基于灰度值来表征每个通孔中的至少一个材料层的残差; 基于残差的表征确定蚀刻成功率; 基于蚀刻成功率的确定来调整蚀刻; 并重复获取，量化，表征，确定和调整的步骤，直到达到期望的蚀刻成功率。

公开(公告)号：US09091667B2

公开(公告)日：2015-07-28

申请号：US14063531

申请日：2013-10-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Adam Michal Urbanowicz ,  Carsten Hartig ,  Daniel Fischer

IPC: G01N21/00 ,  G01N21/95 ,  G01N23/00

CPC classification number: G01N21/9501 ,  G01N21/94 ,  G01N23/00

Abstract: A method of the detection of particle contamination on a semiconductor wafer is provides which includes examining an area of the semiconductor wafer by a metrology system comprising a scatterometry or ellipsometry/reflectometry tool to obtain measured metrology data, comparing the measured metrology data with reference metrology data and determining the presence of particle contamination in the examined area of the semiconductor wafer based on the comparison of the measured metrology data with the reference metrology data.

Abstract translation: 提供了一种检测半导体晶片上的颗粒污染的方法，其包括通过包括散射仪或椭偏仪/反射测量工具的测量系统检查半导体晶片的面积，以获得测量的测量数据，将测量的测量数据与参考测量数据进行比较 并且基于测量的测量数据与参考测量数据的比较来确定半导体晶片的检查区域中颗粒污染的存在。

公开(公告)号：US20150033201A1

公开(公告)日：2015-01-29

申请号：US13953532

申请日：2013-07-29

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Alok Vaid ,  Carsten Hartig ,  Lokesh Subramany

IPC: G06F17/50

CPC classification number: H01L22/00 ,  G03F7/70616 ,  H01L22/12

Abstract: Methods and systems are provided for fabricating and measuring physical features of a semiconductor device structure. An exemplary method of fabricating a semiconductor device structure involves obtaining raw measurement data for a wafer of semiconductor material from a metrology tool and adjusting a measurement model utilized by a metrology tool based at least in part on the raw measurement data and a value for a design parameter. The wafer has that value for the design parameter and an attribute of the semiconductor device structure fabricated thereon, wherein the measurement model is utilized by the metrology tool to convert the raw measurement data to a measurement value for the attribute.

Abstract translation: 提供了用于制造和测量半导体器件结构的物理特征的方法和系统。 制造半导体器件结构的示例性方法包括从计量工具获得用于半导体材料的晶片的原始测量数据，并且至少部分地基于原始测量数据和设计值来调整由测量工具使用的测量模型 参数。 晶片具有该设计参数的值以及其上制造的半导体器件结构的属性，其中测量模型由测量工具用于将原始测量数据转换为该属性的测量值。