公开(公告)号：US20190267801A1

公开(公告)日：2019-08-29

申请号：US15906475

申请日：2018-02-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anil KUMAR ,  Manjunatha G. PRABHU ,  Alain F. LOISEAU ,  Mahbub RASHED ,  Sushama DAVAR

IPC: H02H9/04 ,  H01L27/02

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) protection circuits and methods of use and manufacture. The structure includes: an electrostatic discharge (ESD) clamp which receives an input signal from a trigger circuit; and a voltage node connecting to a back gate of the ESD clamp, the voltage node providing a voltage to the ESD clamp during an electrostatic discharge (ESD) event.

公开(公告)号：US20190393209A1

公开(公告)日：2019-12-26

申请号：US16018549

申请日：2018-06-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Souvick MITRA ,  Mickey YU ,  Alain F. LOISEAU ,  You LI ,  Robert J. GAUTHIER, JR. ,  Tsung-Che TSAI

IPC: H01L27/02 ,  H01L23/60 ,  H01L27/092 ,  H01L21/8238

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge structures with reduced capacitance and methods of manufacture. The structure includes: a plurality of fin structures provided in at least one N+ type region and at least one P+ region; and a plurality of gate structures disposed over the plurality of fin structures and within the at least one N+ type region and one P+ region, the plurality of gate structures being separated in a lengthwise direction between the at least one N+ type region and the least one P+ region.

公开(公告)号：US20170178704A1

公开(公告)日：2017-06-22

申请号：US14971644

申请日：2015-12-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Alain F. LOISEAU ,  Joseph M. Lukaitis ,  Ephrem G. Gebreselasie ,  Richard A. Poro ,  Andreas D. Stricker ,  Ahmed Y. Ginawi

IPC: G11C7/24 ,  H01L27/06 ,  H01L23/525 ,  H01L27/112 ,  H01L27/02

CPC classification number: G11C7/24 ,  G11C5/005 ,  G11C17/16 ,  H01L23/5256 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0617 ,  H01L27/11206

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) protection structures for eFuses. The structure includes an electrostatic discharge (ESD) protection structure operatively coupled to an eFuse, which is structured to prevent unintentional programming of the eFuse due to an ESD event originating at a source.

公开(公告)号：US20200021109A1

公开(公告)日：2020-01-16

申请号：US16033731

申请日：2018-07-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： You LI ,  Alain F. LOISEAU ,  Souvick MITRA ,  Tsung-Che TSAI ,  Mickey YU ,  Robert J. GAUTHIER, JR.

IPC: H02H9/04 ,  H01L27/02 ,  H02H1/00

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to electrostatic discharge clamp structures and methods of manufacture. The structure includes: a network of clamps; sense elements in series with the clamps and configured to sense a turn-on of at least one clamp of the network of clamps; and feedback elements connected to the clamps to facilitate triggering of remaining clamps of the network of clamps.