公开(公告)号：US20190393221A1

公开(公告)日：2019-12-26

申请号：US16562481

申请日：2019-09-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Balaji KANNAN ,  Ayse M. OZBEK ,  Tao CHU ,  Bala HARAN ,  Vishal CHHABRA ,  Katsunori ONISHI ,  Guowei XU

IPC: H01L27/092 ,  H01L21/027 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/311 ,  H01L27/02 ,  H01L29/06

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.

公开(公告)号：US20190115346A1

公开(公告)日：2019-04-18

申请号：US15783549

申请日：2017-10-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Balaji KANNAN ,  Ayse M. OZBEK ,  Tao CHU ,  Bala HARAN ,  Vishal CHHABRA ,  Katsunori ONISHI ,  Guowei XU

IPC: H01L27/092 ,  H01L29/06 ,  H01L27/02 ,  H01L21/311 ,  H01L21/027 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L27/0924 ,  H01L21/0274 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823828 ,  H01L21/823878 ,  H01L27/0207 ,  H01L27/1104 ,  H01L29/0649 ,  H01L29/517 ,  H01L29/66545

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.

公开(公告)号：US20180323113A1

公开(公告)日：2018-11-08

申请号：US16038977

申请日：2018-07-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Suraj Kumar PATIL ,  Katsunori ONISHI ,  Pei LIU ,  Chih-Chiang CHANG

IPC: H01L21/8238 ,  H01L29/49 ,  H01L27/092 ,  H01L21/28

CPC classification number: H01L21/823842 ,  H01L21/28088 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/4966

Abstract: A method of controlling NFET and PFET gate heights across different gate widths with chamfering and the resulting device are provided. Embodiments include forming an ILD over a fin; forming cavities in the ILD, each with similar or different widths; forming a high-K dielectric layer over the ILD and in each cavity; forming a pWF metal layer over the dielectric layer in one cavity; recessing the pWF metal layer to a height above the fin; forming an nWF metal layer in the cavities over the dielectric and pWF metal layers; recessing the nWF metal layer to a height above the pWF metal layer; forming a barrier layer over the dielectric and nWF metal layers; filling the cavities with a low-resistive metal; and recessing the barrier and dielectric layers to a height above the nWF metal layer; and concurrently etching the low-resistive metal.

公开(公告)号：US20190027578A1

公开(公告)日：2019-01-24

申请号：US15654234

申请日：2017-07-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： Bala HARAN ,  Ruilong XIE ,  Balaji KANNAN ,  Katsunori ONISHI ,  Vimal K. KAMINENI

IPC: H01L29/66 ,  H01L29/161 ,  H01L21/285

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to replacement metal gate structures and methods of manufacture. The structure includes at least one short channel device including a dielectric material, a workfunction metal, and a capping material, and a long channel device comprising the dielectric material, the workfunction metal and fluorine free gate conductor material.