公开(公告)号：US09825093B2

公开(公告)日：2017-11-21

申请号：US14832108

申请日：2015-08-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Chung H. Lam ,  Chung-Hsun Lin ,  Darsen D. Lu ,  Philip J. Oldiges

IPC: H01L27/24 ,  H01L29/08 ,  H01L45/00 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L21/311 ,  H01L21/8234 ,  H01L29/423

CPC classification number: H01L27/2436 ,  H01L21/31105 ,  H01L21/823431 ,  H01L21/823456 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/42376 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/785 ,  H01L45/06

Abstract: Embodiments are directed to a method of forming portions of a fin-type field effect transistor (FinFET) device. The method includes forming at least one source region having multiple sides, forming at least one drain region having multiple sides, forming at least one channel region having multiple sides, forming at least one gate region around the multiple sides of the at least one channel region and forming the at least one gate region around the multiple sides of the at least one drain region.

公开(公告)号：US09825094B2

公开(公告)日：2017-11-21

申请号：US14953702

申请日：2015-11-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Chung H. Lam ,  Chung-Hsun Lin ,  Darsen D. Lu ,  Philip J. Oldiges

IPC: H01L29/66 ,  H01L27/24 ,  H01L21/311 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/78 ,  H01L45/00 ,  H01L29/417 ,  H01L29/08

CPC classification number: H01L27/2436 ,  H01L21/31105 ,  H01L21/823431 ,  H01L21/823456 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/42376 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/785 ,  H01L45/06

Abstract: Embodiments are directed to a method of forming portions of a fin-type field effect transistor (FinFET) device. The method includes forming at least one source region having multiple sides, forming at least one drain region having multiple sides, forming at least one channel region having multiple sides, forming at least one gate region around the multiple sides of the at least one channel region and forming the at least one gate region around the multiple sides of the at least one drain region.

公开(公告)号：US20170053966A1

公开(公告)日：2017-02-23

申请号：US14832108

申请日：2015-08-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Chung H. Lam ,  Chung-Hsun Lin ,  Darsen D. Lu ,  Philip J. Oldiges

IPC: H01L27/24 ,  H01L29/08 ,  H01L45/00 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/2436 ,  H01L21/31105 ,  H01L21/823431 ,  H01L21/823456 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/42376 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/785 ,  H01L45/06

Abstract: Embodiments are directed to a method of forming portions of a fin-type field effect transistor (FinFET) device. The method includes forming at least one source region having multiple sides, forming at least one drain region having multiple sides, forming at least one channel region having multiple sides, forming at least one gate region around the multiple sides of the at least one channel region and forming the at least one gate region around the multiple sides of the at least one drain region.

Abstract translation: 实施例涉及一种形成鳍型场效应晶体管（FinFET）器件的部分的方法。 该方法包括形成具有多个侧面的至少一个源极区域，形成至少一个具有多个边的漏极区域，形成具有多个边的至少一个沟道区域，在该至少一个沟道区域的多个边缘周围形成至少一个栅极区域 以及在所述至少一个漏极区域的所述多个侧面周围形成所述至少一个栅极区域。