公开(公告)号：US20150137270A1

公开(公告)日：2015-05-21

申请号：US14570292

申请日：2014-12-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sven Beyer ,  Berthold Reimer ,  Falk Graetsch

IPC: H01L29/423 ,  H01L29/51 ,  H01L29/49

CPC classification number: H01L29/42376 ,  H01L21/28114 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/32139 ,  H01L29/42364 ,  H01L29/4958 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7833

Abstract: A transistor device includes a gate electrode structure. The gate electrode structure includes a high-k gate insulation layer, a metal-containing first electrode material positioned above the high-k gate insulation layer, and a second electrode material positioned above the metal-containing first electrode material. The high-k gate insulation layer has a length that is less than a length of the second electrode material.

Abstract translation: 晶体管器件包括栅电极结构。 栅电极结构包括高k栅极绝缘层，位于高k栅极绝缘层上方的含金属的第一电极材料和位于含金属的第一电极材料上方的第二电极材料。 高k栅极绝缘层的长度小于第二电极材料的长度。