公开(公告)号：US20140264641A1

公开(公告)日：2014-09-18

申请号：US14184826

申请日：2014-02-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Kai Frohberg ,  Marco Lepper ,  Katrin Reiche ,  Torsten Huisinga

IPC: H01L29/49

CPC classification number: H01L29/4175 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L23/485 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53247 ,  H01L23/53266 ,  H01L23/5329 ,  H01L24/05 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2924/00 ,  H01L2924/0002

Abstract: When forming semiconductor devices with contact plugs comprising protection layers formed on sidewalls of etch stop layers to reduce the risk of shorts, the protection layers may be formed by performing a sputter process to remove material from a contact region and redeposit the removed material on the sidewalls of the etch stop layers.

Abstract translation: 当形成具有接触插塞的半导体器件时，其包括形成在蚀刻停止层的侧壁上的保护层以减少短路的风险，可以通过执行溅射工艺来形成保护层，以从接触区域移除材料并将去除的材料重新沉积在侧壁上 的蚀刻停止层。

公开(公告)号：US09269809B2

公开(公告)日：2016-02-23

申请号：US14184826

申请日：2014-02-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Kai Frohberg ,  Marco Lepper ,  Katrin Reiche

IPC: H01L21/00 ,  H01L29/78 ,  H01L29/417 ,  H01L23/485 ,  H01L21/768

CPC classification number: H01L29/4175 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L23/485 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53247 ,  H01L23/53266 ,  H01L23/5329 ,  H01L24/05 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2924/00 ,  H01L2924/0002

Abstract: When forming semiconductor devices with contact plugs comprising protection layers formed on sidewalls of etch stop layers to reduce the risk of shorts, the protection layers may be formed by performing a sputter process to remove material from a contact region and redeposit the removed material on the sidewalls of the etch stop layers.

Abstract translation: 当形成具有接触插塞的半导体器件时，其包括形成在蚀刻停止层的侧壁上的保护层以减少短路的风险，可以通过执行溅射工艺来形成保护层，以从接触区域移除材料并将去除的材料重新沉积在侧壁上 的蚀刻停止层。

公开(公告)号：US09023709B2

公开(公告)日：2015-05-05

申请号：US14011413

申请日：2013-08-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hans-Peter Moll ,  Marco Lepper ,  Werner Graf

IPC: H01L21/00 ,  H01L21/3205 ,  H01L21/288 ,  H01L21/768

CPC classification number: H01L21/76804 ,  H01L21/31111 ,  H01L21/31155 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76877

Abstract: When forming metallization layers of advanced semiconductor devices, one often has to fill apertures with a high aspect ratio with a metal, such as copper. The present disclosure provides a convenient method for forming apertures with a high aspect ratio in an insulating layer. This insulating layer may have been deposited on the surface of a semiconductor device. The proposed method relies on an ion implantation step performed on the insulating layer, followed by an etch, which is preferably a wet etch.

Abstract translation: 当形成先进的半导体器件的金属化层时，通常必须用金属（例如铜）填充具有高纵横比的孔。 本公开提供了一种用于在绝缘层中形成具有高纵横比的孔的方便的方法。 该绝缘层可能已经沉积在半导体器件的表面上。 所提出的方法依赖于在绝缘层上执行的离子注入步骤，随后进行蚀刻，其优选为湿蚀刻。

公开(公告)号：US09590056B2

公开(公告)日：2017-03-07

申请号：US14967983

申请日：2015-12-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Kai Frohberg ,  Marco Lepper ,  Katrin Reiche

IPC: H01L29/00 ,  H01L29/417 ,  H01L29/78 ,  H01L23/485 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L23/00

CPC classification number: H01L29/4175 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L23/485 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53247 ,  H01L23/53266 ,  H01L23/5329 ,  H01L24/05 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A semiconductor device includes a silicide contact region positioned at least partially in a semiconductor layer, an etch stop layer positioned above the semiconductor layer, and a dielectric layer positioned above the etch stop layer. A contact structure that includes a conductive contact material extends through at least a portion of the dielectric layer and through an entirety of the etch stop layer to the silicide contact region, and a silicide protection layer is positioned between sidewalls of the etch stop layer and sidewalls of the contact structure.

Abstract translation: 半导体器件包括至少部分地位于半导体层中的硅化物接触区域，位于半导体层上方的蚀刻停止层以及位于蚀刻停止层上方的电介质层。 包括导电接触材料的接触结构延伸穿过电介质层的至少一部分，并通过整个蚀刻停止层延伸至硅化物接触区，硅化物保护层位于蚀刻停止层的侧壁和侧壁 的接触结构。

公开(公告)号：US20160099321A1

公开(公告)日：2016-04-07

申请号：US14967983

申请日：2015-12-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Kai Frohberg ,  Marco Lepper ,  Katrin Reiche

IPC: H01L29/417 ,  H01L23/532 ,  H01L23/528

CPC classification number: H01L29/4175 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L23/485 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53247 ,  H01L23/53266 ,  H01L23/5329 ,  H01L24/05 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A semiconductor device includes a silicide contact region positioned at least partially in a semiconductor layer, an etch stop layer positioned above the semiconductor layer, and a dielectric layer positioned above the etch stop layer. A contact structure that includes a conductive contact material extends through at least a portion of the dielectric layer and through an entirety of the etch stop layer to the silicide contact region, and a silicide protection layer is positioned between sidewalls of the etch stop layer and sidewalls of the contact structure.

Abstract translation: 半导体器件包括至少部分地位于半导体层中的硅化物接触区域，位于半导体层上方的蚀刻停止层以及位于蚀刻停止层上方的电介质层。 包括导电接触材料的接触结构延伸穿过电介质层的至少一部分，并通过整个蚀刻停止层延伸至硅化物接触区，硅化物保护层位于蚀刻停止层的侧壁和侧壁 的接触结构。

公开(公告)号：US20150064872A1

公开(公告)日：2015-03-05

申请号：US14011413

申请日：2013-08-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hans-Peter Moll ,  Marco Lepper ,  Werner Graf

IPC: H01L21/3205 ,  H01L21/768 ,  H01L21/288

CPC classification number: H01L21/76804 ,  H01L21/31111 ,  H01L21/31155 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76877

Abstract: When forming metallization layers of advanced semiconductor devices, one often has to fill apertures with a high aspect ratio with a metal, such as copper. The present disclosure provides a convenient method for forming apertures with a high aspect ratio in an insulating layer. This insulating layer may have been deposited on the surface of a semiconductor device. The proposed method relies on an ion implantation step performed on the insulating layer, followed by an etch, which is preferably a wet etch.

Abstract translation: 当形成先进的半导体器件的金属化层时，通常必须用金属（例如铜）填充具有高纵横比的孔。 本公开提供了一种用于在绝缘层中形成具有高纵横比的孔的方便的方法。 该绝缘层可能已经沉积在半导体器件的表面上。 所提出的方法依赖于在绝缘层上执行的离子注入步骤，随后进行蚀刻，其优选为湿蚀刻。