公开(公告)号：US09812324B1

公开(公告)日：2017-11-07

申请号：US15405789

申请日：2017-01-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Zhuang ,  Lars Liebmann ,  Stuart A. Sieg ,  Fee Li Lie ,  Mahender Kumar ,  Shreesh Narasimha ,  Ahmed Hassan ,  Guillaume Bouche ,  Xintuo Dai

IPC: H01L21/02 ,  H01L21/76 ,  H01L21/30 ,  H01L21/027 ,  H01L29/66 ,  H01L27/02 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/308 ,  H01L21/28 ,  H01L21/3065

CPC classification number: H01L27/0207 ,  H01L21/28123 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/76224 ,  H01L21/823431 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method includes providing a semiconductor structure having a substrate including a longitudinally extending plurality of fins formed thereon. A target layout pattern is determined, which overlays active areas devices disposed on the fins. The target layout pattern includes a first group of sections overlaying devices having more fins than adjacent devices and a second group of sections overlaying devices having less fins than adjacent devices. A first extended exposure pattern is patterned into the structure, and includes extensions that extend sections of the first group toward adjacent sections of the first group. A second extended exposure pattern is patterned into the structure, and includes extensions that extend sections of the second group toward adjacent sections of the second group. Portions of the first and second extended exposure patterns are combined to form a final pattern overlaying the same active areas as the target pattern.