公开(公告)号：US20160379798A1

公开(公告)日：2016-12-29

申请号：US15039527

申请日：2014-11-19

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Chie SHISHIDO ,  Takuma YAMAMOTO ,  Shinya YAMADA ,  Maki TANAKA

IPC: H01J37/29 ,  H01J37/244 ,  G01B15/00

CPC classification number: H01J37/29 ,  G01B15/00 ,  G01B15/04 ,  G01B2210/56 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24495 ,  H01J2237/2806 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L22/12

Abstract: In order to allow detecting backscattered electrons (BSEs) generated from the bottom of a hole for determining whether a hole with a super high aspect ratio is opened or for inspecting and measuring the ratio of the top diameter to the bottom diameter of a hole, which are typified in 3D-NAND processes of opening a hole, a primary electron beam accelerated at a high accelerating voltage is applied to a sample. Backscattered electrons (BSEs) at a low angle (e.g. a zenith angle of five degrees or more) are detected. Thus, the bottom of a hole is observed using “penetrating BSEs” having been emitted from the bottom of the hole and penetrated the side wall. Using the characteristics in which a penetrating distance is relatively prolonged through a deep hole and the amount of penetrating BSEs is decreased to cause a dark image, a calibration curve expressing the relationship between a hole depth and the brightness is given to measure the hole depth.

Abstract translation: 为了允许检测从孔的底部产生的背散射电子（BSE），用于确定是否打开具有超高纵横比的孔，或者用于检查和测量孔的顶部直径与底部直径的比， 以3D-NAND打开孔的方式为代表，以高加速电压加速的一次电子束被施加到样品。 检测到低角度（例如五度以上的天顶角）的背散射电子（BSE）。 因此，使用从孔的底部排出并穿透侧壁的“穿透BSE”来观察孔的底部。 利用穿透深度相对延长穿过深孔的特性，并减少穿透性BSE的量使黑暗的图像表现出孔深与亮度之间的关系的校准曲线来测量孔深度。