公开(公告)号：US09536844B1

公开(公告)日：2017-01-03

申请号：US14678512

申请日：2015-04-03

申请人： HRL Laboratories, LLC

发明人： Peter D. Brewer ,  Dana C. Wheeler ,  Tahir Hussain ,  Kyung-Ah Son ,  Hyok J. Song ,  Harris P. Moyer ,  Joseph S. Colburn ,  James H. Schaffner

IPC分类号： H01L27/144 ,  H01L23/66 ,  H01L23/00 ,  H01L23/498 ,  H01L29/167 ,  H01L29/32 ,  H01Q1/02 ,  H01Q1/14

CPC分类号： H01L23/66 ,  H01L23/4985 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/57 ,  H01L29/167 ,  H01L29/32 ,  H01L2223/6677 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01Q9/005 ,  H01L2924/00014

摘要： The disclosed antenna structures and electronic microsystems are capable of physically disappearing in a controlled, triggerable manner. Some variations provide an on-chip transient antenna comprising a semiconductor substrate containing ion-implanted hydrogen atoms and a conductor network comprising metals bridged by low-melting-temperature metals. Some variations provide an off-chip transient antenna comprising a flexible substrate containing a polymer, nanoporous silicon particles, and an oxidant for silicon, and a conductor network comprising metals bridged by low-melting-temperature metals. Other variations provide a method of introducing physical transience to a semiconductor integrated circuit, comprising thinning a substrate from the back side, implanting hydrogen ions into the thinned substrate to introduce latent structural flaws, depositing a semiconductor integrated circuit or sensor chip, and providing a controllable heating source capable of activating the latent structural flaws. These novel approaches are compatible with existing integrated circuits processing, preserve antenna performance, and use foundry-compatible techniques.

摘要翻译： 所公开的天线结构和电子微系统能够以受控的，可触发的方式物理地消失。 一些变型提供包括含有离子注入的氢原子的半导体衬底的片上瞬态天线和包含由低熔点金属桥接的金属的导体网络。 一些变型提供了包括含有聚合物，纳米多孔硅颗粒和硅氧化剂的柔性基板的片外瞬态天线，以及包含由低熔点金属桥接的金属的导体网络。 其它变型提供了一种将物理瞬态引入半导体集成电路的方法，包括从背面稀释衬底，将氢离子注入到薄化衬底中以引入潜在的结构缺陷，沉积半导体集成电路或传感器芯片，以及提供可控制的 能够激活潜在结构缺陷的加热源。 这些新颖的方法与现有的集成电路处理兼容，保留天线性能，并使用代工兼容技术。

公开(公告)号：US09691761B1

公开(公告)日：2017-06-27

申请号：US15335207

申请日：2016-10-26

申请人： HRL Laboratories, LLC

发明人： Pamela R. Patterson ,  Keisuke Shinohara ,  Hasan Sharifi ,  Wonill Ha ,  Tahir Hussain ,  James Chingwei Li ,  Dana C. Wheeler

IPC分类号： H01L27/00 ,  H01L27/06 ,  H01L21/8258 ,  H01L29/165

CPC分类号： H01L27/0688 ,  H01L21/8252 ,  H01L21/8258 ,  H01L21/84 ,  H01L23/481 ,  H01L27/0605 ,  H01L27/085 ,  H01L27/1203 ,  H01L29/165 ,  H01L2224/32145 ,  H01L2224/73265 ,  H01L2224/97

摘要： A compound semiconductor integrated circuit comprising a first substrate; a first electronic component formed on top of said first substrate; a layer of a first dielectric material formed on top of said first substrate and including said first electronic component, said layer of a first dielectric material comprising a recess exposing a first region of said first substrate; and a layer of a second dielectric material attached to said first substrate on top of said first region of said first substrate after manufacturing of said layer of a second dielectric material, said layer of a second material comprising a second electronic component.

公开(公告)号：US09515068B1

公开(公告)日：2016-12-06

申请号：US14014121

申请日：2013-08-29

申请人： HRL Laboratories, LLC

发明人： Pamela R. Patterson ,  Keisuke Shinohara ,  Hasan Sharifi ,  Wonill Ha ,  Tahir Hussain ,  James Chingwei Li ,  Dana C. Wheeler

IPC分类号： H01L27/00 ,  H01L27/06 ,  H01L21/84 ,  H01L27/12 ,  H01L23/48

CPC分类号： H01L27/0688 ,  H01L21/8252 ,  H01L21/8258 ,  H01L21/84 ,  H01L23/481 ,  H01L27/0605 ,  H01L27/085 ,  H01L27/1203 ,  H01L29/165 ,  H01L2224/32145 ,  H01L2224/73265 ,  H01L2224/97

摘要： A compound semiconductor integrated circuit comprising a first substrate; a first electronic component formed on top of said first substrate; a layer of a first dielectric material formed on top of said first substrate and including said first electronic component, said layer of a first dielectric material comprising a recess exposing a first region of said first substrate; and a layer of a second dielectric material attached to said first substrate on top of said first region of said first substrate after manufacturing of said layer of a second dielectric material, said layer of a second material comprising a second electronic component.

摘要翻译： 一种复合半导体集成电路，包括第一衬底; 形成在所述第一基板的顶部上的第一电子部件; 形成在所述第一基板的顶部并包括所述第一电子部件的第一介电材料层，所述第一介电材料层包括露出所述第一基板的第一区域的凹部; 以及在制造所述第二介电材料层之后，在所述第一衬底的所述第一区域的顶部附着到所述第一衬底的第二电介质材料层，所述第二材料层包括第二电子部件。