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公开(公告)号：US08618551B2
公开(公告)日：2013-12-31
申请号：US13219862
申请日：2011-08-29
IPC分类号： H01L31/0256
CPC分类号： H01L33/38 , H01L33/14 , H01L33/405 , H01L33/42 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a substrate, a first electrode, a first conductivity type layer, a light emitting layer, a second conductivity type layer and a second electrode. The first conductivity type layer includes a first contact layer, a window layer having a lower impurity concentration than the first contact layer and a first cladding layer. The second conductivity type layer includes a second cladding layer, a current spreading layer and a second contact layer. The second electrode includes a narrow-line region on the second contact layer and a pad region electrically connected to the narrow-line region. Band gap energies of the first contact and window layers are larger than that of the light emitting layer. The first contact layer is provided selectively between the window layer and the first electrode and without overlapping the second contact layer as viewed from above.
摘要翻译： 根据一个实施例，半导体发光器件包括衬底，第一电极，第一导电类型层，发光层，第二导电类型层和第二电极。 第一导电类型层包括第一接触层，具有比第一接触层低的杂质浓度的窗口层和第一包层。 第二导电类型层包括第二包覆层，电流扩散层和第二接触层。 第二电极包括在第二接触层上的窄线区域和电连接到窄线区域的焊盘区域。 第一触点和窗口层的带隙能量大于发光层的带隙能量。 选择性地在窗口层和第一电极之间提供第一接触层，并且从上方观察不与第二接触层重叠。
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公开(公告)号：US20130221367A1
公开(公告)日：2013-08-29
申请号：US13599853
申请日：2012-08-30
CPC分类号： H01L33/22 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first electrode, a first conductivity type layer, a second conductivity type layer, and a second electrode. The first electrode includes a reflection metal layer. The first conductivity type layer is provided between the light emitting layer and the first electrode. The second conductivity type layer has a first surface on the light emitting layer side and a second surface on an opposite side of the first surface. The second electrode is provided on the second surface of the second conductivity type layer. A plurarity of interfaces, provided between the first conductivity type layer and the reflection metal layer, has at least first concave-convex structures. A region of the second surface of the second conductivity type layer, where the second electrode is not provided, has second concave-convex structures.
摘要翻译： 根据一个实施例，半导体发光器件包括发光层，第一电极，第一导电型层，第二导电类型层和第二电极。 第一电极包括反射金属层。 第一导电类型层设置在发光层和第一电极之间。 第二导电类型层在发光层侧具有第一表面和在第一表面的相对侧上的第二表面。 第二电极设置在第二导电类型层的第二表面上。 提供在第一导电类型层和反射金属层之间的界面的多个具有至少第一凹凸结构。 不设置第二电极的第二导电型层的第二表面的区域具有第二凹凸结构。
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公开(公告)号：US20120104431A1
公开(公告)日：2012-05-03
申请号：US13048046
申请日：2011-03-15
IPC分类号： H01L33/40
摘要： According to one embodiment, a light emitting element includes a light emitting layer, a cladding layer, a current spreading layer, a second layer, and an electrode. The light emitting layer is capable of emitting emission light. The current spreading layer includes a surface processed layer and a first layer. The surface processed layer has a surface including convex portions and bottom portions provided adjacent to the convex portions. The first layer is provided between the surface processed layer and the cladding layer. The second layer is provided between the surface processed layer and the cladding layer and includes a region having an impurity concentration higher than an impurity concentration of the current spreading layer. The electrode is provided in a region of the surface of the surface processed layer where the convex portions and the bottom portions are not provided.
摘要翻译： 根据一个实施例，发光元件包括发光层，包覆层，电流扩散层，第二层和电极。 发光层能够发射发光。 电流扩散层包括表面处理层和第一层。 表面处理层具有包括与凸部相邻设置的凸部和底部的表面。 第一层设置在表面处理层和包覆层之间。 第二层设置在表面处理层和包覆层之间，并且包括杂质浓度高于电流扩散层的杂质浓度的区域。 电极设置在表面处理层的没有设置凸部和底部的表面的区域中。
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公开(公告)号：US09224916B2
公开(公告)日：2015-12-29
申请号：US13614124
申请日：2012-09-13
申请人： Hironori Yamasaki , Yukie Nishikawa
发明人： Hironori Yamasaki , Yukie Nishikawa
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/145 , H01L33/16 , H01L33/30 , H01L33/38 , H01L33/405 , H01L33/44
摘要： According to an embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a dielectric film and an electrode. The first semiconductor layer is capable of emitting light. The second semiconductor layer has a first major surface in contact with the first semiconductor layer and a second major surface opposite to the first major surface, the second major surface including a first region having convex structures and a second region not having the convex structures. The dielectric film is provided at least at a tip portion of the convex structures, and the electrode is provided above the second region.
摘要翻译： 根据实施例，半导体发光器件包括第一半导体层，第二半导体层，电介质膜和电极。 第一半导体层能够发光。 第二半导体层具有与第一半导体层接触的第一主表面和与第一主表面相对的第二主表面，第二主表面包括具有凸起结构的第一区域和不具有凸起结构的第二区域。 绝缘膜至少设置在凸结构的顶端部，电极设置在第二区域的上方。
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公开(公告)号：US09287448B2
公开(公告)日：2016-03-15
申请号：US13053527
申请日：2011-03-22
摘要： According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting light. The current spreading layer has a first surface and a second surface. The light emitting layer is disposed on a side of the first surface. A light extraction surface having convex structures of triangle cross-sectional shape and a flat surface which is a crystal growth plane are included in the second surface. The pad electrode is provided on the flat surface. One base angle of the convex structure is 90 degrees or more.
摘要翻译： 根据一个实施例，半导体发光元件包括发光层，第一导电类型的电流扩展层和焊盘电极。 发光层能够发光。 电流扩散层具有第一表面和第二表面。 发光层设置在第一表面的一侧。 在第二表面中包括具有三角形截面形状的凸形结构和作为晶体生长面的平坦表面的光提取表面。 焊盘电极设置在平坦表面上。 凸结构的一个底角为90度以上。
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公开(公告)号：US20120273793A1
公开(公告)日：2012-11-01
申请号：US13219862
申请日：2011-08-29
IPC分类号： H01L33/60
CPC分类号： H01L33/38 , H01L33/14 , H01L33/405 , H01L33/42 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a substrate, a first electrode, a first conductivity type layer, a light emitting layer, a second conductivity type layer and a second electrode. The first conductivity type layer includes a first contact layer, a window layer having a lower impurity concentration than the first contact layer and a first cladding layer. The second conductivity type layer includes a second cladding layer, a current spreading layer and a second contact layer. The second electrode includes a narrow-line region on the second contact layer and a pad region electrically connected to the narrow-line region. Band gap energies of the first contact and window layers are larger than that of the light emitting layer. The first contact layer is provided selectively between the window layer and the first electrode and without overlapping the second contact layer as viewed from above.
摘要翻译： 根据一个实施例，半导体发光器件包括衬底，第一电极，第一导电类型层，发光层，第二导电类型层和第二电极。 第一导电类型层包括第一接触层，具有比第一接触层低的杂质浓度的窗口层和第一包层。 第二导电类型层包括第二包覆层，电流扩散层和第二接触层。 第二电极包括在第二接触层上的窄线区域和电连接到窄线区域的焊盘区域。 第一触点和窗口层的带隙能量大于发光层的带隙能量。 选择性地在窗口层和第一电极之间提供第一接触层，并且从上方观察不与第二接触层重叠。
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公开(公告)号：US20120146072A1
公开(公告)日：2012-06-14
申请号：US13053527
申请日：2011-03-22
IPC分类号： H01L33/60
摘要： According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting light. The current spreading layer has a first surface and a second surface. The light emitting layer is disposed on a side of the first surface. A light extraction surface having convex structures of triangle cross-sectional shape and a flat surface which is a crystal growth plane are included in the second surface. The pad electrode is provided on the flat surface. One base angle of the convex structure is 90 degrees or more.
摘要翻译： 根据一个实施例，半导体发光元件包括发光层，第一导电类型的电流扩展层和焊盘电极。 发光层能够发光。 电流扩散层具有第一表面和第二表面。 发光层设置在第一表面的一侧。 在第二表面中包括具有三角形截面形状的凸形结构和作为晶体生长面的平坦表面的光提取表面。 焊盘电极设置在平坦表面上。 凸结构的一个底角为90度以上。
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公开(公告)号：US08772809B2
公开(公告)日：2014-07-08
申请号：US13599853
申请日：2012-08-30
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first electrode, a first conductivity type layer, a second conductivity type layer, and a second electrode. The first electrode includes a reflection metal layer. The first conductivity type layer is provided between the light emitting layer and the first electrode. The second conductivity type layer has a first surface on the light emitting layer side and a second surface on an opposite side of the first surface. The second electrode is provided on the second surface of the second conductivity type layer. A plurarity of interfaces, provided between the first conductivity type layer and the reflection metal layer, has at least first concave-convex structures. A region of the second surface of the second conductivity type layer, where the second electrode is not provided, has second concave-convex structures.
摘要翻译： 根据一个实施例，半导体发光器件包括发光层，第一电极，第一导电型层，第二导电类型层和第二电极。 第一电极包括反射金属层。 第一导电类型层设置在发光层和第一电极之间。 第二导电类型层在发光层侧具有第一表面和在第一表面的相对侧上的第二表面。 第二电极设置在第二导电类型层的第二表面上。 提供在第一导电类型层和反射金属层之间的界面的多个具有至少第一凹凸结构。 不设置第二电极的第二导电型层的第二表面的区域具有第二凹凸结构。
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公开(公告)号：US08674384B2
公开(公告)日：2014-03-18
申请号：US13048046
申请日：2011-03-15
IPC分类号： H01L33/00
摘要： According to one embodiment, a light emitting element includes a light emitting layer, a cladding layer, a current spreading layer, a second layer, and an electrode. The light emitting layer is capable of emitting emission light. The current spreading layer includes a surface processed layer and a first layer. The surface processed layer has a surface including convex portions and bottom portions provided adjacent to the convex portions. The first layer is provided between the surface processed layer and the cladding layer. The second layer is provided between the surface processed layer and the cladding layer and includes a region having an impurity concentration higher than an impurity concentration of the current spreading layer. The electrode is provided in a region of the surface of the surface processed layer where the convex portions and the bottom portions are not provided.
摘要翻译： 根据一个实施例，发光元件包括发光层，包覆层，电流扩散层，第二层和电极。 发光层能够发射发光。 电流扩散层包括表面处理层和第一层。 表面处理层具有包括与凸部相邻设置的凸部和底部的表面。 第一层设置在表面处理层和包覆层之间。 第二层设置在表面处理层和包覆层之间，并且包括杂质浓度高于电流扩散层的杂质浓度的区域。 电极设置在表面处理层的没有设置凸部和底部的表面的区域中。
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公开(公告)号：US08530913B2
公开(公告)日：2013-09-10
申请号：US13019681
申请日：2011-02-02
CPC分类号： H01L33/22 , H01L33/325 , H01L33/405
摘要： According to one embodiment, a light emitting device includes a light emitting layer, a first electrode, a first and second layers, and a cladding layer. The first layer has a first impurity concentration of a first conductivity type, and allows a carrier to be diffused in the light emitting layer. The second layer has a second impurity concentration of the first conductivity type higher than the first impurity concentration, and includes a first and second surfaces. The first surface is with the first layer. The second surface has a formation region and a non-formation region of the first electrode. The non-formation region includes convex structures with an average pitch not more than a wavelength of the emission light. The cladding layer is provided between the first layer and the light emitting layer and has an impurity concentration of the first conductivity type.
摘要翻译： 根据一个实施例，发光器件包括发光层，第一电极，第一和第二层以及包层。 第一层具有第一导电类型的第一杂质浓度，并允许载体在发光层中扩散。 第二层具有高于第一杂质浓度的第一导电类型的第二杂质浓度，并且包括第一和第二表面。 第一个表面是第一个表面。 第二表面具有第一电极的形成区域和非形成区域。 非形成区域包括平均间距不大于发射光波长的凸结构。 包覆层设置在第一层和发光层之间，并且具有第一导电类型的杂质浓度。
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