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    Step-like spacer profile
    2.
    发明授权
    Step-like spacer profile 有权
    阶梯状间隔剖面

    公开(公告)号：US08492236B1

    公开(公告)日：2013-07-23

    申请号：US13348766

    申请日：2012-01-12

    申请人： Xuesong Rao ,  Chim Seng Seet ,  Hai Cong ,  Zheng Zou ,  Alex See ,  Yun Ling Tan ,  Wen Zhan Zhou ,  Lup San Leong ,  Huang Liu

    发明人： Xuesong Rao ,  Chim Seng Seet ,  Hai Cong ,  Zheng Zou ,  Alex See ,  Yun Ling Tan ,  Wen Zhan Zhou ,  Lup San Leong ,  Huang Liu

    IPC分类号： H01L21/336

    CPC分类号： H01L29/6656 ,  H01L29/78

    摘要： Interlayer dielectric gap fill processes are enhanced by forming gate spacers with a step-like or tapered profile. Embodiments include forming a gate electrode on a substrate, depositing a spacer material over the gate electrode, etching the spacer material to form a first spacer on each side of the gate electrode, and pulling back the first spacers to form second spacers which have a step-like profile. Embodiments further include depositing a second spacer material over the gate electrode and the second spacers, and etching the second spacer material to form a third spacer on each second spacer, the second and third spacers forming an outwardly tapered composite spacer.

    摘要翻译： 通过形成具有阶梯状或锥形轮廓的栅极间隔物来增强层间电介质间隙填充工艺。 实施例包括在衬底上形成栅电极，在栅电极上沉积间隔物材料，蚀刻间隔物材料以在栅电极的每一侧上形成第一间隔物，并拉回第一间隔物以形成第二间隔物， 像个人资料 实施例还包括在栅极电极和第二间隔物上沉积第二间隔物材料，并蚀刻第二间隔物材料以在每个第二间隔物上形成第三间隔物，第二和第三间隔物形成向外锥形的复合间隔物。

    STEP-LIKE SPACER PROFILE
    3.
    发明申请
    STEP-LIKE SPACER PROFILE 有权

    公开(公告)号：US20130181259A1

    公开(公告)日：2013-07-18

    申请号：US13348766

    申请日：2012-01-12

    申请人： Xuesong Rao ,  Chim Seng Seet ,  Hai Cong ,  Zheng Zou ,  Alex See ,  Yun Ling Tan ,  Wen Zhan Zhou ,  Lup San Leong ,  Huang Liu

    发明人： Xuesong Rao ,  Chim Seng Seet ,  Hai Cong ,  Zheng Zou ,  Alex See ,  Yun Ling Tan ,  Wen Zhan Zhou ,  Lup San Leong ,  Huang Liu

    IPC分类号： H01L29/78 ,  H01L21/28

    CPC分类号： H01L29/6656 ,  H01L29/78

    摘要： Interlayer dielectric gap fill processes are enhanced by forming gate spacers with a step-like or tapered profile. Embodiments include forming a gate electrode on a substrate, depositing a spacer material over the gate electrode, etching the spacer material to form a first spacer on each side of the gate electrode, and pulling back the first spacers to form second spacers which have a step-like profile. Embodiments further include depositing a second spacer material over the gate electrode and the second spacers, and etching the second spacer material to form a third spacer on each second spacer, the second and third spacers forming an outwardly tapered composite spacer.

    摘要翻译： 通过形成具有阶梯状或锥形轮廓的栅极间隔物来增强层间电介质间隙填充工艺。 实施例包括在衬底上形成栅电极，在栅电极上沉积间隔物材料，蚀刻间隔物材料以在栅电极的每一侧上形成第一间隔物，并拉回第一间隔物以形成第二间隔物， 像个人资料 实施例还包括在栅极电极和第二间隔物上沉积第二间隔物材料，并蚀刻第二间隔物材料以在每个第二间隔物上形成第三间隔物，第二和第三间隔物形成向外锥形的复合间隔物。

    Spacer profile engineering using films with continuously increased etch rate from inner to outer surface
    4.
    发明授权
    Spacer profile engineering using films with continuously increased etch rate from inner to outer surface 有权
    使用具有从内到外表面的不断增加的蚀刻速率的膜的间隔轮廓工程

    公开(公告)号：US08828858B2

    公开(公告)日：2014-09-09

    申请号：US13353684

    申请日：2012-01-19

    申请人： Xuesong Rao ,  Chim Seng Seet ,  Hai Cong ,  Zheng Zou ,  Alex See ,  Yun Ling Tan ,  Wen Zhan Zhou ,  Lup San Leong

    发明人： Xuesong Rao ,  Chim Seng Seet ,  Hai Cong ,  Zheng Zou ,  Alex See ,  Yun Ling Tan ,  Wen Zhan Zhou ,  Lup San Leong

    IPC分类号： H01L21/3205 ,  H01L21/4763

    CPC分类号： H01L29/6653 ,  H01L29/6656

    摘要： Interlayer dielectric gap fill processes are enhanced by forming gate spacers with a tapered profile. Embodiments include forming a gate electrode on a substrate, depositing a spacer material over the gate electrode and substrate, the spacer layer having a first surface nearest the gate electrode and substrate, a second surface furthest from the gate electrode and substrate, and a continuously increasing etch rate from the first surface to the second surface, and etching the spacer layer to form a spacer on each side of the gate electrode. Embodiments further include forming the spacer layer by depositing a spacer material and continuously decreasing the density of the spacer material during deposition or depositing a carbon-containing spacer material and causing a gradient of carbon content in the spacer layer.

    摘要翻译： 通过形成具有锥形轮廓的栅极间隔物来增强层间电介质间隙填充工艺。 实施例包括在衬底上形成栅电极，在栅电极和衬底上沉积间隔物材料，间隔层具有最靠近栅电极和衬底的第一表面，离栅电极和衬底最远的第二表面，以及连续增加 从第一表面到第二表面的蚀刻速率，并且蚀刻间隔层以在栅电极的每一侧上形成间隔物。 实施例还包括通过沉积间隔物材料形成间隔层，并在沉积期间连续降低间隔物材料的密度或沉积含碳间隔物材料并引起间隔层中的碳含量梯度。

    SPACER PROFILE ENGINEERING USING FILMS WITH CONTINUOUSLY INCREASED ETCH RATE FROM INNER TO OUTER SURFACE
    5.
    发明申请
    SPACER PROFILE ENGINEERING USING FILMS WITH CONTINUOUSLY INCREASED ETCH RATE FROM INNER TO OUTER SURFACE 有权
    使用膜的间隙轮廓工程，从内部到外表面连续增加的刻蚀速率

    公开(公告)号：US20130187202A1

    公开(公告)日：2013-07-25

    申请号：US13353684

    申请日：2012-01-19

    申请人： Xuesong Rao ,  Chim Seng Seet ,  Hai Cong ,  Zheng Zou ,  Alex See ,  Yun Ling Tan ,  Wen Zhan Zhou ,  Lup San Leong

    发明人： Xuesong Rao ,  Chim Seng Seet ,  Hai Cong ,  Zheng Zou ,  Alex See ,  Yun Ling Tan ,  Wen Zhan Zhou ,  Lup San Leong

    IPC分类号： H01L29/78 ,  H01L21/28

    CPC分类号： H01L29/6653 ,  H01L29/6656

    摘要： Interlayer dielectric gap fill processes are enhanced by forming gate spacers with a tapered profile. Embodiments include forming a gate electrode on a substrate, depositing a spacer material over the gate electrode and substrate, the spacer layer having a first surface nearest the gate electrode and substrate, a second surface furthest from the gate electrode and substrate, and a continuously increasing etch rate from the first surface to the second surface, and etching the spacer layer to form a spacer on each side of the gate electrode. Embodiments further include forming the spacer layer by depositing a spacer material and continuously decreasing the density of the spacer material during deposition or depositing a carbon-containing spacer material and causing a gradient of carbon content in the spacer layer.

    摘要翻译： 通过形成具有锥形轮廓的栅极间隔物来增强层间电介质间隙填充工艺。 实施例包括在衬底上形成栅电极，在栅电极和衬底上沉积间隔物材料，间隔层具有最靠近栅电极和衬底的第一表面，离栅电极和衬底最远的第二表面，以及连续增加 从第一表面到第二表面的蚀刻速率，并且蚀刻间隔层以在栅电极的每一侧上形成间隔物。 实施例还包括通过沉积间隔物材料形成间隔层，并在沉积期间连续降低间隔物材料的密度或沉积含碳间隔物材料并引起间隔层中的碳含量梯度。

    METHOD FOR FORMING THROUGH SILICON VIA WITH WAFER BACKSIDE PROTECTION
    6.
    发明申请
    METHOD FOR FORMING THROUGH SILICON VIA WITH WAFER BACKSIDE PROTECTION 有权
    通过硅片防止背面保护形成硅的方法

    公开(公告)号：US20140008810A1

    公开(公告)日：2014-01-09

    申请号：US13542256

    申请日：2012-07-05

    申请人： Lup San Leong ,  Zheng Zou ,  Alex Kai Hung See ,  Hai Cong ,  Xuesong Rao ,  Yun Ling Tan ,  Huang Liu

    发明人： Lup San Leong ,  Zheng Zou ,  Alex Kai Hung See ,  Hai Cong ,  Xuesong Rao ,  Yun Ling Tan ,  Huang Liu

    IPC分类号： H01L21/306 ,  H01L23/48

    CPC分类号： H01L23/481 ,  H01L21/02107 ,  H01L21/486 ,  H01L21/76898 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/13009 ,  H01L2224/1357

    摘要： Semiconductor devices with through silicon vias (TSVs) are formed without copper contamination. Embodiments include exposing a passivation layer surrounding a bottom portion of a TSV in a silicon substrate, forming a silicon composite layer over the exposed passivation layer and over a bottom surface of the silicon substrate, forming a hardmask layer over the silicon composite layer and over the bottom surface of the silicon substrate, removing a section of the silicon composite layer around the bottom portion of the TSV using the hardmask layer as a mask, re-exposing the passivation layer, and removing the hardmask layer and the re-exposed passivation layer to expose a contact for the bottom portion of the TSV.

    摘要翻译： 具有贯通硅通孔（TSV）的半导体器件不形成铜污染。 实施例包括在硅衬底中暴露围绕TSV的底部的钝化层，在暴露的钝化层上方并在硅衬底的底表面上形成硅复合层，在硅复合层上形成硬掩模层， 硅衬底的底表面，使用硬掩模层作为掩模去除围绕TSV的底部部分的硅复合层的一部分，再次暴露钝化层，以及将硬掩模层和再曝光的钝化层移除到 暴露TSV底部的触点。