公开(公告)号：US20090209028A1

公开(公告)日：2009-08-20

申请号：US12346950

申请日：2008-12-31

申请人： Huang Yi Dong ,  Rao Yi ,  Liu Fang ,  Zhang Wei ,  Peng Jiang De ,  Dai Ohnishi ,  Daisuke Niwa ,  Atsushi Tazuke ,  Yoshikatsu Miura

发明人： Huang Yi Dong ,  Rao Yi ,  Liu Fang ,  Zhang Wei ,  Peng Jiang De ,  Dai Ohnishi ,  Daisuke Niwa ,  Atsushi Tazuke ,  Yoshikatsu Miura

IPC分类号： C12M1/34 ,  G01N21/41

CPC分类号： G01N21/553 ,  G01N21/41 ,  G01N21/7703

摘要： There is provided a sensing chip capable of measuring a refractive index by utilizing a long-range surface plasmon polariton, accurately measuring an accumulative refractive index in a wide range, and more easily enabling sealing for measurement. The present invention relates to the sensing chip which has a thin metal film or a strip-like metal grown on an underlayer, and has a dielectric that limits a refractive index and a dielectric buffer layer on an upper surface and a lower surface of the thin metal film or the strip-like metal. The dielectric buffer layer is attached onto the thin metal film or the strip-like metal. The thin metal film or the strip-like metal and the buffer layer are sandwiched between two dielectric layers. A hole is made in a surface of the upper dielectric layer to serve as a measurement groove.

摘要翻译： 提供了一种能够通过利用远程表面等离子体激元测量折射率的感测芯片，精确地测量宽范围内的累积折射率，并且更容易实现测量密封。 本发明涉及一种感测芯片，其具有在底层上生长的薄金属膜或带状金属，并且具有限制薄膜的上表面和下表面上的折射率和介电缓冲层的电介质 金属膜或带状金属。 介电缓冲层附着在薄金属膜或带状金属上。 金属薄膜或带状金属和缓冲层夹在两个电介质层之间。 在上部电介质层的表面形成孔作为测量槽。

公开(公告)号：US08048385B2

公开(公告)日：2011-11-01

申请号：US12346950

申请日：2008-12-31

申请人： Huang Yi Dong ,  Rao Yi ,  Liu Fang ,  Zhang Wei ,  Peng Jiang De ,  Dai Ohnishi ,  Daisuke Niwa ,  Atsushi Tazuke ,  Yoshikatsu Miura

发明人： Huang Yi Dong ,  Rao Yi ,  Liu Fang ,  Zhang Wei ,  Peng Jiang De ,  Dai Ohnishi ,  Daisuke Niwa ,  Atsushi Tazuke ,  Yoshikatsu Miura

IPC分类号： G01N21/75

CPC分类号： G01N21/553 ,  G01N21/41 ,  G01N21/7703

摘要： There is provided a sensing chip capable of measuring a refractive index by utilizing a long-range surface plasmon polariton, accurately measuring an accumulative refractive index in a wide range, and more easily enabling sealing for measurement. The present invention relates to the sensing chip which has a thin metal film or a strip-like metal grown on an underlayer, and has a dielectric that limits a refractive index and a dielectric buffer layer on an upper surface and a lower surface of the thin metal film or the strip-like metal. The dielectric buffer layer is attached onto the thin metal film or the strip-like metal. The thin metal film or the strip-like metal and the buffer layer are sandwiched between two dielectric layers. A hole is made in a surface of the upper dielectric layer to serve as a measurement groove.

摘要翻译： 提供了一种能够通过利用远程表面等离子体激元测量折射率的感测芯片，精确地测量宽范围内的累积折射率，并且更容易实现测量密封。 本发明涉及一种感测芯片，其具有在底层上生长的薄金属膜或带状金属，并且具有限制薄膜的上表面和下表面上的折射率和介电缓冲层的电介质 金属膜或带状金属。 介电缓冲层附着在薄金属膜或带状金属上。 金属薄膜或带状金属和缓冲层夹在两个电介质层之间。 在上部电介质层的表面形成孔作为测量槽。

公开(公告)号：US06104850A

公开(公告)日：2000-08-15

申请号：US110679

申请日：1998-07-07

申请人： Huang Yi Dong

发明人： Huang Yi Dong

IPC分类号： G02F1/025 ,  G02B6/14 ,  G02B6/34 ,  G02F1/365 ,  H01S3/063 ,  H01S5/00 ,  H01S5/026 ,  H01S5/062 ,  H01S5/12 ,  H01S5/50

CPC分类号： H01S5/0265 ,  B82Y20/00 ,  G02F1/01708 ,  H01S5/5036 ,  G02F1/0353 ,  G02F2201/16 ,  H01S5/06236 ,  H01S5/12

摘要： A semiconductor TE/TM mode converter comprises a semiconductor waveguide layer including a compressive-strained first region and a tensile-strained second region, and a diffraction grating formed on the first region. The first region and second region are reversed-biased and forward-biased, respectively. TE mode light incident on the facet of the first region generates TM mode light outgoing from the facet of the second region. The diffraction grating in the first region has selective reflectance against TM mode light and reflects the TM mode light toward the second region, to lower the lasing threshold of TM mode light and raise the conversion efficiency.

摘要翻译： 半导体TE / TM模式转换器包括包括压缩应变第一区域和拉伸应变第二区域的半导体波导层和形成在第一区域上的衍射光栅。 第一个区域和第二个区域分别被反向偏置和正向偏置。 入射在第一区域的小平面上的TE模式光产生从第二区域的小平面出射的TM模式光。 第一区域中的衍射光栅具有针对TM模式光的选择性反射，并且朝向第二区域反射TM模式光，以降低TM模式光的激光阈值并提高转换效率。