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1.发明授权Nitrogen-containing heteroaromatic ligand-transition metal complexes, buffer layer comprising the complexes and organic thin film transistor comprising the buffer layer 有权含氮杂芳族配体 - 过渡金属配合物，包含络合物的缓冲层和包含缓冲层的有机薄膜晶体管公开(公告)号：US08354533B2
公开(公告)日：2013-01-15
申请号：US13200321
申请日：2011-09-23
申请人： Hyun Sik Moon , Do Hwan Kim , Jong Jin Park , Jung Seok Hahn
发明人： Hyun Sik Moon , Do Hwan Kim , Jong Jin Park , Jung Seok Hahn
CPC分类号： C07F1/005 , H01L51/0084 , H01L51/102 , Y02E10/549 , Y10T428/26
摘要： Example embodiments provide a nitrogen-containing heteroaromatic ligand-transition metal complex, a buffer layer including the complex, which may improve the injection and transport of electrical charges, an organic thin film transistor and an electronic device including the buffer layer, in which the injection of electrons or holes and the transport of charges between layers are accelerated, thereby improving the efficiency thereof, and methods of manufacturing the same.
摘要翻译： 示例性实施方案提供含氮杂芳族配体 - 过渡金属络合物，包含络合物的缓冲层，其可以改善电荷的注入和输送，有机薄膜晶体管和包括缓冲层的电子器件，其中注入 的电子或空穴，并且层之间的电荷的传输被加速，从而提高其效率，及其制造方法。
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2.发明申请Nitrogen-containing heteroaromatic ligand-transition metal complexes, buffer layer comprising the complexes and organic thin film transistor comprising the buffer layer 有权含氮杂芳族配体 - 过渡金属配合物，包含络合物的缓冲层和包含缓冲层的有机薄膜晶体管公开(公告)号：US20080197346A1
公开(公告)日：2008-08-21
申请号：US11980349
申请日：2007-10-31
申请人： Hyun Sik Moon , Do Hwan Kim , Jong Jin Park , Jung Seok Hahn
发明人： Hyun Sik Moon , Do Hwan Kim , Jong Jin Park , Jung Seok Hahn
CPC分类号： C07F1/005 , H01L51/0084 , H01L51/102 , Y02E10/549 , Y10T428/26
摘要： Example embodiments provide a nitrogen-containing heteroaromatic ligand-transition metal complex, a buffer layer including the complex, which may improve the injection and transport of electrical charges, an organic thin film transistor and an electronic device including the buffer layer, in which the injection of electrons or holes and the transport of charges between layers are accelerated, thereby improving the efficiency thereof, and methods of manufacturing the same.
摘要翻译： 示例性实施方案提供含氮杂芳族配体 - 过渡金属络合物，包含络合物的缓冲层，其可以改善电荷的注入和输送，有机薄膜晶体管和包括缓冲层的电子器件，其中注入 的电子或空穴，并且层之间的电荷的传输被加速，从而提高其效率，及其制造方法。
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3.发明授权Functionalized metal nanoparticle, buffer layer including the same and electronic device including the buffer layer 有权官能化金属纳米颗粒，包括其的缓冲层和包括缓冲层的电子器件公开(公告)号：US08617709B2
公开(公告)日：2013-12-31
申请号：US12078778
申请日：2008-04-04
申请人： Hyun Sik Moon , Jong Jin Park , Bon Won Koo , Jung Seok Hahn , Do Hwan Kim
发明人： Hyun Sik Moon , Jong Jin Park , Bon Won Koo , Jung Seok Hahn , Do Hwan Kim
IPC分类号： B32B5/16
CPC分类号： C07D271/113 , B82Y20/00 , C07B2200/11 , C07F7/1804 , H01L51/5088 , H01L51/5092 , H01L2251/5369 , Y10T428/25 , Y10T428/256 , Y10T428/2982 , Y10T428/2991
摘要： Disclosed herein is a functionalized metal nanoparticle, a buffer layer including the functionalized metal nanoparticle, and an electronic device including the buffer layer. The buffer layer including the functionalized metal nanoparticle according to example embodiments may improve the injection of electrons or holes and the charge mobility between layers in the electronic device, may form ohmic contacts, and may improve the selectivity between electrodes and the buffer layer at the time of forming the buffer layer on the electrodes, thereby improving the efficiency of the electronic device.
摘要翻译： 本文公开了官能化金属纳米颗粒，包含官能化金属纳米颗粒的缓冲层和包括缓冲层的电子器件。 包括根据示例性实施方案的官能化金属纳米颗粒的缓冲层可以改善电子或空穴的注入，并且电子器件中的层之间的电荷迁移率可以形成欧姆接触，并且可以提高电极和缓冲层之间的选择性 在电极上形成缓冲层，从而提高电子器件的效率。
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4.发明授权Nitrogen-containing heteroaromatic ligand-transition metal complexes, buffer layer comprising the complexes and organic thin film transistor comprising the buffer layer 有权含氮杂芳族配体 - 过渡金属配合物，包含络合物的缓冲层和包含缓冲层的有机薄膜晶体管公开(公告)号：US08053575B2
公开(公告)日：2011-11-08
申请号：US11980349
申请日：2007-10-31
申请人： Hyun Sik Moon , Do Hwan Kim , Jong Jin Park , Jung Seok Hahn
发明人： Hyun Sik Moon , Do Hwan Kim , Jong Jin Park , Jung Seok Hahn
CPC分类号： C07F1/005 , H01L51/0084 , H01L51/102 , Y02E10/549 , Y10T428/26
摘要： Example embodiments provide a nitrogen-containing heteroaromatic ligand-transition metal complex, a buffer layer including the complex, which may improve the injection and transport of electrical charges, an organic thin film transistor and an electronic device including the buffer layer, in which the injection of electrons or holes and the transport of charges between layers are accelerated, thereby improving the efficiency thereof, and methods of manufacturing the same.
摘要翻译： 示例性实施方案提供含氮杂芳族配体 - 过渡金属络合物，包含络合物的缓冲层，其可以改善电荷的注入和输送，有机薄膜晶体管和包括缓冲层的电子器件，其中注入 的电子或空穴，并且层之间的电荷的传输被加速，从而提高其效率，及其制造方法。
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5.发明申请Nitrogen-containing heteroaromatic ligand-transition metal complexes, buffer layer comprising the complexes and organic thin film transistor comprising the buffer layer 有权含氮杂芳族配体 - 过渡金属配合物，包含络合物的缓冲层和包含缓冲层的有机薄膜晶体管公开(公告)号：US20120018713A1
公开(公告)日：2012-01-26
申请号：US13200321
申请日：2011-09-23
申请人： Hyun Sik Moon , Do Hwan Kim , Jong Jin Park , Jung Seok Hahn
发明人： Hyun Sik Moon , Do Hwan Kim , Jong Jin Park , Jung Seok Hahn
CPC分类号： C07F1/005 , H01L51/0084 , H01L51/102 , Y02E10/549 , Y10T428/26
摘要： Example embodiments provide a nitrogen-containing heteroaromatic ligand-transition metal complex, a buffer layer including the complex, which may improve the injection and transport of electrical charges, an organic thin film transistor and an electronic device including the buffer layer, in which the injection of electrons or holes and the transport of charges between layers are accelerated, thereby improving the efficiency thereof, and methods of manufacturing the same.
摘要翻译： 示例性实施方案提供含氮杂芳族配体 - 过渡金属络合物，包含络合物的缓冲层，其可以改善电荷的注入和输送，有机薄膜晶体管和包括缓冲层的电子器件，其中注入 的电子或空穴，并且层之间的电荷的传输被加速，从而提高其效率，及其制造方法。
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6.发明申请Functionalized metal nanoparticle, buffer layer including the same and electronic device including the buffer layer 有权官能化金属纳米颗粒，包括其的缓冲层和包括缓冲层的电子器件公开(公告)号：US20080299382A1
公开(公告)日：2008-12-04
申请号：US12078778
申请日：2008-04-04
申请人： Hyun Sik Moon , Jong Jin Park , Bon Won Koo , Jung Seok Hahn , Do Hwan Kim
发明人： Hyun Sik Moon , Jong Jin Park , Bon Won Koo , Jung Seok Hahn , Do Hwan Kim
IPC分类号： B32B5/16
CPC分类号： C07D271/113 , B82Y20/00 , C07B2200/11 , C07F7/1804 , H01L51/5088 , H01L51/5092 , H01L2251/5369 , Y10T428/25 , Y10T428/256 , Y10T428/2982 , Y10T428/2991
摘要： Disclosed herein is a functionalized metal nanoparticle, a buffer layer including the functionalized metal nanoparticle, and an electronic device including the buffer layer. The buffer layer including the functionalized metal nanoparticle according to example embodiments may improve the injection of electrons or holes and the charge mobility between layers in the electronic device, may form ohmic contacts, and may improve the selectivity between electrodes and the buffer layer at the time of forming the buffer layer on the electrodes, thereby improving the efficiency of the electronic device.
摘要翻译： 本文公开了官能化金属纳米颗粒，包含官能化金属纳米颗粒的缓冲层和包括缓冲层的电子器件。 包括根据示例性实施方案的官能化金属纳米颗粒的缓冲层可以改善电子或空穴的注入，并且电子器件中的层之间的电荷迁移率可以形成欧姆接触，并且可以提高电极和缓冲层之间的选择性 在电极上形成缓冲层，从而提高电子器件的效率。
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7.发明申请Composition for forming passivation layer and organic thin film transistor comprising the passivation layer 有权用于形成钝化层的组合物和包含钝化层的有机薄膜晶体管公开(公告)号：US20090045396A1
公开(公告)日：2009-02-19
申请号：US12078403
申请日：2008-03-31
申请人： Jung Seok Hahn , Do Hwan Kim , Bon Won Koo , Sang Yoon Lee , Hyun Sik Moon
发明人： Jung Seok Hahn , Do Hwan Kim , Bon Won Koo , Sang Yoon Lee , Hyun Sik Moon
CPC分类号： G03F7/092 , G03F7/0046 , G03F7/038
摘要： Disclosed herein is a composition including a perfluoropolyether derivative, a photosensitive polymer or a copolymer thereof, and a photocuring agent, a passivation layer, organic thin film transistor, and electronic device including the same, a method of forming the passivation layer and methods of fabricating the organic thin film transistor and electronic device. The organic thin film transistor may prevent or reduce oxygen and moisture from infiltrating thereinto, and thus may prevent or reduce the degradation of the performance thereof caused by ambient air, prevent or reduce the deterioration thereof, and may more easily be formed into a pattern, thereby exhibiting characteristics suitable for use in electronics.
摘要翻译： 本文公开了包含全氟聚醚衍生物，光敏聚合物或其共聚物，光固化剂，钝化层，有机薄膜晶体管和包括其的电子器件的组合物，形成钝化层的方法和制造方法 有机薄膜晶体管和电子器件。 有机薄膜晶体管可以防止或减少氧气和水分渗入其中，从而可以防止或减少由环境空气引起的性能的劣化，防止或减少其劣化，并且可以更容易地形成为图案， 从而表现出适用于电子设备的特性。
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公开(公告)号：US20090032809A1
公开(公告)日：2009-02-05
申请号：US12078748
申请日：2008-04-04
申请人： Do Hwan Kim , Jung Seok Hahn , Sang Yoon Lee , Bon Won Koo , Hyun Sik Moon
发明人： Do Hwan Kim , Jung Seok Hahn , Sang Yoon Lee , Bon Won Koo , Hyun Sik Moon
CPC分类号： H01L51/0512 , H01L51/0012 , H01L51/0037 , H01L51/0529
摘要： Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device.
摘要翻译： 公开了一种有机薄膜晶体管及其制造方法，其中结晶有机粘合剂层位于有机绝缘层和源/漏电极的表面上或源/漏电极的表面上。 有机薄膜晶体管可以在有机半导体和绝缘层之间的界面处或在有机半导体层和电极之间的界面处的二维几何晶格匹配和界面稳定性得到改善，从而改善了器件的电性能 。
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9.发明授权Composition for forming passivation layer and organic thin film transistor comprising the passivation layer 有权用于形成钝化层的组合物和包含钝化层的有机薄膜晶体管公开(公告)号：US07781763B2
公开(公告)日：2010-08-24
申请号：US12078403
申请日：2008-03-31
申请人： Jung Seok Hahn , Do Hwan Kim , Bon Won Koo , Sang Yoon Lee , Hyun Sik Moon
发明人： Jung Seok Hahn , Do Hwan Kim , Bon Won Koo , Sang Yoon Lee , Hyun Sik Moon
CPC分类号： G03F7/092 , G03F7/0046 , G03F7/038
摘要： Disclosed herein is a composition including a perfluoropolyether derivative, a photosensitive polymer or a copolymer thereof, and a photocuring agent, a passivation layer, organic thin film transistor, and electronic device including the same, a method of forming the passivation layer and methods of fabricating the organic thin film transistor and electronic device. The organic thin film transistor may prevent or reduce oxygen and moisture from infiltrating thereinto, and thus may prevent or reduce the degradation of the performance thereof caused by ambient air, prevent or reduce the deterioration thereof, and may more easily be formed into a pattern, thereby exhibiting characteristics suitable for use in electronics.
摘要翻译： 本文公开了包含全氟聚醚衍生物，光敏聚合物或其共聚物，光固化剂，钝化层，有机薄膜晶体管和包括其的电子器件的组合物，形成钝化层的方法和制造方法 有机薄膜晶体管和电子器件。 有机薄膜晶体管可以防止或减少氧气和水分渗入其中，从而可以防止或减少由环境空气引起的性能的劣化，防止或减少其劣化，并且可以更容易地形成为图案， 从而表现出适用于电子设备的特性。
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公开(公告)号：US20080308793A1
公开(公告)日：2008-12-18
申请号：US12073497
申请日：2008-03-06
CPC分类号： C09D4/06 , C08G77/58 , C08K5/5425 , C08L21/00 , C08L83/04 , C09D183/04 , C09D183/14 , H01L51/0036 , H01L51/052 , H01L51/0541 , H01L51/0545 , Y10T428/31663 , C08L2666/02 , C08L2666/52
摘要： Disclosed are a composition including a silane-based organic/inorganic hybrid material having a multiple bond and one or more organic metal compounds and/or one or more organic polymers, an organic insulator including the composition, an organic thin film transistor (OTFT) including the organic insulator and an electronic device including the OTFT. The organic insulator including the composition for preparing an organic insulator has increased charge mobility and an increased on/off current ratio, thus exhibiting improved properties, and the organic thin film transistor manifests uniform properties due to the absence of hysteresis.
摘要翻译： 公开了包含具有多重键的硅烷类有机/无机混合材料和一种或多种有机金属化合物和/或一种或多种有机聚合物，包含该组合物的有机绝缘体，有机薄膜晶体管（OTFT） 有机绝缘体和包括OTFT的电子设备。 包括用于制备有机绝缘体的组合物的有机绝缘体具有增加的电荷迁移率和增加的导通/截止电流比，从而表现出改进的性能，并且由于没有滞后，有机薄膜晶体管表现出均匀的性能。
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