公开(公告)号：US3873361A

公开(公告)日：1975-03-25

申请号：US42003473

申请日：1973-11-29

Applicant: IBM

Inventor： FRANCO JACK R ,  HAVAS JANOS ,  LEVINE HAROLD A

IPC: G03F1/00 ,  C23C14/04 ,  G03F1/08 ,  G03F7/09 ,  H01L21/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/312 ,  H01L23/29 ,  H05K3/02 ,  H05K3/04 ,  B44D1/18 ,  H05K1/00

CPC classification number: H05K3/048 ,  C23C14/042 ,  G03F7/094 ,  H01L21/00 ,  H01L21/312 ,  H01L23/29 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for use in depositing thin films in the fabrication of integrated circuits which avoids edge tearing of the films. The method involves depositing a non-photosensitive organic polymeric material on a substrate, and forming on said polymeric layer a masking layer of an inorganic material, preferably metal, having openings in a selected pattern. Then, forming, by reactive sputter etching, utilizing the metallic mask as a barrier, openings through the polymeric layer extending to the substrate, the openings in the polymeric layer being aligned with and laterally wider than the corresponding openings in the metallic masking layer. The thin film to be deposited is then applied over the structure; it is, thereby, deposited on the substrate in said openings. Then, the remaining polymeric layer is removed, lifting off the masking layer and the thin film above the polymeric layer to leave thin film deposited in a selected pattern in the openings.

Abstract translation: 一种用于在制造集成电路中沉积薄膜的方法，其避免了膜的边缘撕裂。 该方法包括将非感光有机聚合物材料沉积在基底上，并在所述聚合物层上形成具有选定图案开口的无机材料（优选金属）的掩蔽层。 然后，通过反应性溅射蚀刻，利用金属掩模作为屏障，通过聚合物层的开口延伸到基底，聚合物层中的开口与金属掩蔽层中相应的开口对准并且横向宽于金属掩模层中的相应开口。 然后将待沉积的薄膜施加在结构上; 从而沉积在所述开口中的基板上。 然后，除去剩余的聚合物层，从掩模层和聚合物层上方的薄膜上取下薄膜，以在开口中以选定的图案沉积薄膜。

公开(公告)号：US3639185A

公开(公告)日：1972-02-01

申请号：US3639185D

申请日：1969-06-30

Applicant: IBM

Inventor： COLOM LUCAS A ,  LEVINE HAROLD A

IPC: C09K13/12 ,  C23F1/00 ,  C23F1/10 ,  C23F1/38 ,  G03C1/72 ,  H01L21/308 ,  C23G1/20 ,  C23F1/02

CPC classification number: C23F1/38

Abstract: A composition for etching thin films of metal, such as chromium or molybdenum, comprising alkaline metal salts of weak inorganic acids which yield solutions having a pH in the range of 12 to 13.5, e.g. sodium or potassium-meta or orthosilicates or sodium orthophosphate, and oxidizing agents active in alkaline solutions, such as potassium permanganate or sodium ferricyanide. Also, the method of selectively etching away portions of such metal films by masking said films with positive alkali-developed photoresists and treating with the etching compositions described above.

Abstract translation: 用于蚀刻诸如铬或钼的金属薄膜的组合物，其包含弱酸性无机酸的碱金属盐，其产生pH在12至13.5范围内的溶液，例如。 钠或钾或原硅酸盐或正磷酸钠，以及在碱性溶液中活化的氧化剂，例如高锰酸钾或铁氰化钠。 此外，通过用正碱显影的光致抗蚀剂掩蔽所述膜并用上述蚀刻组合物进行处理，选择性地蚀刻掉这些金属膜的部分的方法。

公开(公告)号：US3666473A

公开(公告)日：1972-05-30

申请号：US3666473D

申请日：1970-10-06

Applicant: IBM

Inventor： COLOM LUCAS A ,  LEVINE HAROLD A

IPC: G03F7/023 ,  G03C1/52 ,  G03C1/60

CPC classification number: G03F7/0236

Abstract: A FAST POSITIVE PHOTORESIST COMPOSITION EMPLOYS A MIXTURE OF PHENOL-FORMALDEHYDE NOVOLAK AND RESOLE RESINS, EACH HAVING A PARTICULAR MOLECULAR WEIGHT DISTRIBUTION AS DETERMINED BY THEIR SOLUBILITIES IN AQUEOUS ALKALINE SOLUTION, TOGETHER WITH A CONVENTIONAL DIAZOKETONE TYPE OF PHOTOSENSITIZER.