公开(公告)号：US3886569A

公开(公告)日：1975-05-27

申请号：US34623773

申请日：1973-03-29

Applicant: IBM

Inventor： BASI JAGTAR S ,  SANDHU JAGTAR S

IPC: H01L21/00 ,  H01L21/225 ,  H01L21/316 ,  H01L7/00

CPC classification number: H01L21/31625 ,  H01L21/00 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/2255 ,  Y10S148/015 ,  Y10S148/043 ,  Y10S148/085 ,  Y10S148/145 ,  Y10S148/151

Abstract: A simultaneous double diffusion method wherein a coating containing a silicon oxide and the oxides of a plurality of conductivity-determining impurities having different diffusivity rates is formed on the surface of a semiconductor substrate using a temperature at which substantially no diffusion of the impurities into the substrate will take place. Then, the substrate is heated to simultaneously diffuse the impurities into the substrate to form a plurality of abutting regions in the substrate separated by junctions. The sequence of regions in distance, with respect to the substrate surface, is controlled by the diffusivity rates of the selected conductivity-determining impurities. The coating may be a single layer or a plurality of layers, at least two of which contain different conductivitydetermining impurities.

公开(公告)号：US3658606A

公开(公告)日：1972-04-25

申请号：US3658606D

申请日：1969-04-01

Applicant: IBM

Inventor： LYONS VINCENT J ,  SANDHU JAGTAR S

IPC: C23C16/44 ,  C30B31/06 ,  C30B31/16 ,  H01L21/22 ,  H01L21/223 ,  H01L7/36 ,  H01L7/44

CPC classification number: H01L21/2225 ,  C30B31/165 ,  Y10S148/04 ,  Y10S148/041 ,  Y10S148/049 ,  Y10S148/122 ,  Y10S252/951

Abstract: A homogeneous diffusion source and method of producing wherein a semiconductor dopant material and a finely divided semiconductor material are introduced into a capsule in spaced relation, the capsule evacuated, and the capsule introduced into a multiplezone furnace. The temperature of the semiconductor material and the dopant material are maintained until equilibrium is substantially achieved.

Abstract translation: 均匀扩散源及其制造方法，其中将半导体掺杂剂材料和细碎半导体材料以间隔的关系引入胶囊中，将胶囊排空，将胶囊引入多区域炉中。 保持半导体材料和掺杂剂材料的温度，直至基本达到平衡。